摘要:
Rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process. A sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process is coupled to a bottom half of a rotary transformer fixed to a rotating portion of the polisher. A top half of the rotary transformer, coupled to the bottom half of the rotary transformer, is fixed to a stationary portion of the polisher. The signal from the sensor is thus coupled through the rotary transformer to a process monitor.
摘要:
The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要:
The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要:
A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.
摘要:
A method and apparatus for endpoint detection in removal of a film from a semiconductor wafer is provided, with a sensor for creating a signal responsive to the film removal process, a positive feedback amplifier coupled to the sensor, the positive feedback amplifier having a mode selector, and an analyzer coupled to the positive feedback amplifier.
摘要:
An apparatus for rotary signal coupling in in-situ monitoring of a chemical-mechanical polishing process by a polisher is provided with a sensor fixed to a rotatable wafer carrier for creating a signal responsive to the chemical mechanical polishing process, a conductor coupled to the sensor for receiving the signal, the conductor fixed to the rotatable wafer carrier, a contact coupled to the conductor, the contact fixed to a stationary drive arm, and signal transfer means coupled to the contact for transferring the signal to a monitoring means.
摘要:
The change in thickness of a film on an underlying body such as a semiconductor substrate is monitored in situ by inducing a current in the film, and as the thickness of the film changes (either increase or decrease), the changes in the current are detected. With a conductive film, eddy currents are induced in the film by a generating an alternating electromagnetic field with a sensor which includes a capacitor and an inductor.
摘要:
Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.
摘要:
A fluid collection apparatus having an accumulator for contacting a polishing surface of a polishing pad and collecting fluid from the polishing pad, a reservoir for receiving fluid from the accumulator, and a volume maintainer for maintaining a set volume of fluid in the reservoir.
摘要:
Detection of the endpoint for removal of a target film overlying a stopping film by removing the target film with a process that selectively generates a chemical reaction product (for example ammonia when polishing a wafer with a nitride film in a slurry containing KOH) with one of the stopping film and the target film, converting the chemical reaction product to a separate product, producing excited molecules from the separate product, and monitoring the level of light emitted from the excited molecules as the target film is removed.