Chemical mechanical polishing endpoint process control
    4.
    发明授权
    Chemical mechanical polishing endpoint process control 失效
    化学机械抛光终点过程控制

    公开(公告)号:US5659492A

    公开(公告)日:1997-08-19

    申请号:US620721

    申请日:1996-03-19

    摘要: A method and apparatus are provided for determining the endpoint for chemical mechanical polishing a film on a wafer. First, a reference point polishing time indicating when a breakthrough of the film has occurred is determined, then an overpolishing time indicating an interval between the reference point polishing time and when the film has been completely polished is determined. To get the total polishing time to the endpoint, the reference point polishing time and the overpolishing time are added.

    摘要翻译: 提供了一种用于确定化学机械抛光晶片上的薄膜的终点的方法和装置。 首先,确定指示膜的突破何时发生的参考点抛光时间,然后确定指示参考点研磨时间与膜完全抛光之间的间隔的过度抛光时间。 为了得到终点的总抛光时间,添加了参考点抛光时间和过度抛光时间。