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公开(公告)号：US20170358709A1
公开(公告)日：2017-12-14
申请号：US15618190
申请日：2017-06-09
Applicant: Lextar Electronics Corporation
Inventor： Che-Hsuan Huang , Shu-Hsiu Chang , Hsin-Lun Su , Chih-Hao Lin , Tzong-Liang Tsai
CPC classification number: H01L33/20 , H01L27/156 , H01L33/50 , H01L33/502 , H01L33/52 , H01L33/54 , H01L33/58 , H01L2933/005 , H01L2933/0058
Abstract: A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode chip and a lens. The lens covers the light emitting diode chip. A curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of: z=Σi=0nai*yi, A center point of the curve corresponding to the light emitting diode chip is a zero point of y-z coordinate axes. z is a variable of vertical axis of the curve. y is a variable of horizontal axis of the curve. ai is a constant coefficient in a term of ith degree. 3
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公开(公告)号：US10312408B2
公开(公告)日：2019-06-04
申请号：US15722368
申请日：2017-10-02
Applicant: Lextar Electronics Corporation
Inventor： Che-Hsuan Huang , Hsin-Lun Su , Shu-Hsiu Chang , Chih-Hao Lin , Tzong-Liang Tsai
Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.
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公开(公告)号：US20180102459A1
公开(公告)日：2018-04-12
申请号：US15722368
申请日：2017-10-02
Applicant: Lextar Electronics Corporation
Inventor： Che-Hsuan Huang , Hsin-Lun Su , Shu-Hsiu Chang , Chih-Hao Lin , Tzong-Liang Tsai
IPC: H01L33/08
CPC classification number: H01L33/08 , H01L33/50 , H01L33/56 , H01L2933/0091
Abstract: A light emitting diode chip scale packaging structure and a direct type backlight module are disclosed. The light emitting diode chip scale packaging structure includes a light emitting diode chip, a wavelength converting layer, a diffusion structure and a lens. The wavelength converting layer is disposed on the light emitting diode chip and directly contacting the light emitting diode chip, and the wavelength converting layer includes phosphor powders. The diffusion structure covers the light emitting diode chip and the wavelength converting layer, a ratio of a height of the diffusion structure to a width of the diffusion structure is 1:2 to 5:4, and the lens covers the diffusion structure. An outer surface of the lens is a free-form surface, and a material of the lens is different from a material of the diffusion structure.
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公开(公告)号：US10141476B2
公开(公告)日：2018-11-27
申请号：US15618190
申请日：2017-06-09
Applicant: Lextar Electronics Corporation
Inventor： Che-Hsuan Huang , Shu-Hsiu Chang , Hsin-Lun Su , Chih-Hao Lin , Tzong-Liang Tsai
Abstract: A light emitting diode chip scale packaging structure is disclosed. The light emitting diode chip scale packaging structure comprises a light emitting diode chip and a lens. The lens covers the light emitting diode chip. A curve of an outer surface of the lens in a cross-section view substantially complies with a polynomial of: z=Σi=0nai*yi, A center point of the curve corresponding to the light emitting diode chip is a zero point of y-z coordinate axes. z is a variable of vertical axis of the curve. y is a variable of horizontal axis of the curve. ai is a constant coefficient in a term of ith degree. 3
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