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公开(公告)号：US07410863B2
公开(公告)日：2008-08-12
申请号：US11516730
申请日：2006-09-07
IPC: H01L21/8242
CPC classification number: H01L45/1683 , H01L21/76877 , H01L45/085 , H01L45/1233 , H01L45/143 , Y10S257/903 , Y10S257/904 , Y10S257/905 , Y10S257/906
Abstract: A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.
Abstract translation: 描述了用金属填充PCRAM电池的通孔的方法。 包括基板，第一导体和通孔延伸的绝缘体的PCRAM中间结构具有形成在通孔内和绝缘体表面上的金属材料。 金属材料可以沉积在表面上和通孔内。 可流动氧化物的硬掩模沉积在通孔中的金属材料上，以保护通孔中的金属材料。 随后的干溅射蚀刻从绝缘体的表面和硬掩模的一部分去除金属材料。 在完全去除硬掩模之后，玻璃材料在通孔中的金属材料上凹进。 然后，在玻璃材料上形成含金属材料层。 最后，在绝缘体的表面上形成第二导体。
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公开(公告)号：US20070035041A1
公开(公告)日：2007-02-15
申请号：US11516730
申请日：2006-09-07
IPC: H01L21/44
CPC classification number: H01L45/1683 , H01L21/76877 , H01L45/085 , H01L45/1233 , H01L45/143 , Y10S257/903 , Y10S257/904 , Y10S257/905 , Y10S257/906
Abstract: A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.
Abstract translation: 描述了用金属填充PCRAM电池的通孔的方法。 包括基板，第一导体和通孔延伸的绝缘体的PCRAM中间结构具有形成在通孔内和绝缘体表面上的金属材料。 金属材料可以沉积在表面上和通孔内。 可流动氧化物的硬掩模沉积在通孔中的金属材料上，以保护通孔中的金属材料。 随后的干溅射蚀刻从绝缘体的表面和硬掩模的一部分去除金属材料。 在完全去除硬掩模之后，玻璃材料在通孔中的金属材料上凹进。 然后，在玻璃材料上形成含金属材料层。 最后，在绝缘体的表面上形成第二导体。
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公开(公告)号：US07126179B2
公开(公告)日：2006-10-24
申请号：US10758102
申请日：2004-01-16
IPC: H01L31/119
CPC classification number: H01L45/1683 , H01L21/76877 , H01L45/085 , H01L45/1233 , H01L45/143 , Y10S257/903 , Y10S257/904 , Y10S257/905 , Y10S257/906
Abstract: A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via, A subsequent dry sputter etch removes the metallic meterial from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.
Abstract translation: 描述了用金属填充PCRAM电池的通孔的方法。 包括基板，第一导体和通孔延伸的绝缘体的PCRAM中间结构具有形成在通孔内和绝缘体表面上的金属材料。 金属材料可以沉积在表面上和通孔内。 可流动氧化物的硬掩模沉积在通孔中的金属材料上，以保护通孔中的金属材料。随后的干溅射蚀刻从绝缘体的表面和硬掩模的一部分去除金属表面。 在完全去除硬掩模之后，玻璃材料在通孔中的金属材料上凹进。 然后，在玻璃材料上形成含金属材料层。 最后，在绝缘体的表面上形成第二导体。
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公开(公告)号：US07022579B2
公开(公告)日：2006-04-04
申请号：US10388264
申请日：2003-03-14
IPC: H01L21/8242
CPC classification number: H01L45/1683 , H01L21/76877 , H01L45/085 , H01L45/1233 , H01L45/143 , Y10S257/903 , Y10S257/904 , Y10S257/905 , Y10S257/906
Abstract: A method of filling vias for a PCRAM cell with a metal is described. A PCRAM intermediate structure including a substrate, a first conductor, and an insulator through which a via extends has a metallic material formed within the via and on a surface of the insulator. The metallic material may be deposited on the surface and within the via. A hard mask of a flowable oxide is deposited over the metallic material in the via to protect the metallic material in the via. A subsequent dry sputter etch removes the metallic material from the surface of the insulator and a portion of the hard mask. After complete removal of the hard mask, a glass material is recessed over the metallic material in the via. Then, a layer of a metal-containing material is formed over the glass material. Finally, a second conductor is formed on the surface of the insulator.
Abstract translation: 描述了用金属填充PCRAM电池的通孔的方法。 包括基板，第一导体和通孔延伸的绝缘体的PCRAM中间结构具有形成在通孔内和绝缘体表面上的金属材料。 金属材料可以沉积在表面上和通孔内。 可流动氧化物的硬掩模沉积在通孔中的金属材料上，以保护通孔中的金属材料。 随后的干溅射蚀刻从绝缘体的表面和硬掩模的一部分去除金属材料。 在完全去除硬掩模之后，玻璃材料在通孔中的金属材料上凹进。 然后，在玻璃材料上形成含金属材料层。 最后，在绝缘体的表面上形成第二导体。
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公开(公告)号：USRE44637E1
公开(公告)日：2013-12-10
申请号：US12761160
申请日：2010-04-15
IPC: H01L21/00
CPC classification number: H01L27/14601 , H01L27/1462 , H01L27/14623 , H01L27/14625 , H01L27/14685
Abstract: A photon collector has a reflecting metal layer to increase photon collection efficiency in a solid state imaging sensor. The reflecting metal layer reflects incident light internally to a photosensor. A plurality of photon collectors is formed in a wafer substrate over an array of photosensors. The photon collector is formed in an opening in an insulating layer provided over each photosensor.
Abstract translation: 光子收集器具有反射金属层，以增加固态成像传感器中的光子收集效率。 反射金属层将入射光内部反射到光电传感器。 在光电传感器阵列上的晶片衬底中形成多个光子收集器。 光子收集器形成在设置在每个光传感器上的绝缘层的开口中。
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Patent Agency Ranking
6.发明授权Lens, a lens array and imaging device and system having a lens, and method of forming the same 有权透镜，透镜阵列和具有透镜的成像装置和系统及其形成方法公开(公告)号：US07724439B2
公开(公告)日：2010-05-25
申请号：US11976404
申请日：2007-10-24
CPC classification number: G02B3/0087 , G02B3/0056
Abstract: A lens, a lens array and imaging device and system containing a lens, and a method of forming a lens array and an imaging device and system containing a lens. Each lens has varying reflection indices in a radial direction.
Abstract translation: 透镜，透镜阵列和包含透镜的成像装置和系统，以及形成透镜阵列的方法以及包含透镜的成像装置和系统。 每个透镜在径向上具有不同的反射指数。
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公开(公告)号：US20090098717A1
公开(公告)日：2009-04-16
申请号：US12249744
申请日：2008-10-10
Applicant: Jiutao Li , Allen McTeer , Gregory Herdt , Trung T. Doan
Inventor： Jiutao Li , Allen McTeer , Gregory Herdt , Trung T. Doan
IPC: H01L31/20
CPC classification number: C23C14/548 , C23C14/0623 , C23C14/3464 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/1625
Abstract: The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.
Abstract translation: 本发明涉及允许诸如硒化锗（GexSe1-x）的硫族化物玻璃掺杂金属如银，铜或锌的方法和装置，而不用紫外线（UV）光二极化步骤来掺杂硫族化物 玻璃与金属。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。
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公开(公告)号：US07446393B2
公开(公告)日：2008-11-04
申请号：US11710517
申请日：2007-02-26
Applicant: Jiutao Li , Allen McTeer , Gregory Herdt , Trung T. Doan
Inventor： Jiutao Li , Allen McTeer , Gregory Herdt , Trung T. Doan
IPC: H01L29/20
CPC classification number: C23C14/548 , C23C14/0623 , C23C14/3464 , H01L45/085 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/1625
Abstract: The present invention is related to methods and apparatus that allow a chalcogenide glass such as germanium selenide (GexSe1-x) to be doped with a metal such as silver, copper, or zinc without utilizing an ultraviolet (UV) photodoping step to dope the chalcogenide glass with the metal. The chalcogenide glass doped with the metal can be used to store data in a memory device. Advantageously, the systems and methods co-sputter the metal and the chalcogenide glass and allow for relatively precise and efficient control of a constituent ratio between the doping metal and the chalcogenide glass. Further advantageously, the systems and methods enable the doping of the chalcogenide glass with a relatively high degree of uniformity over the depth of the formed layer of chalcogenide glass and the metal. Also, the systems and methods allow a metal concentration to be varied in a controlled manner along the thin film depth.
Abstract translation: 本发明涉及允许硫族化物玻璃如硒化锗（Ge x Sb 1-x x）掺杂金属如银的方法和装置， 铜或锌，而不用紫外线（UV）光二极化步骤来用金属掺杂硫族化物玻璃。 掺杂有金属的硫族化物玻璃可用于将数据存储在存储器件中。 有利的是，系统和方法共同溅射金属和硫族化物玻璃，并允许相对精确和有效地控制掺杂金属和硫族化物玻璃之间的组成比。 进一步有利的是，这些系统和方法能够在硫族化物玻璃和金属的形成层的深度上以相对高的均匀度掺杂硫族化物玻璃。 而且，这些系统和方法允许以薄膜深度的受控方式改变金属浓度。
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公开(公告)号：US20080268611A1
公开(公告)日：2008-10-30
申请号：US12216434
申请日：2008-07-03
Applicant: Jiutao Li , Ralph Kauffman , Richard A. Mauritzson
Inventor： Jiutao Li , Ralph Kauffman , Richard A. Mauritzson
IPC: H01L21/76
CPC classification number: H01L21/76224 , H01L27/1463 , H01L27/14643 , H01L27/14689
Abstract: Methods of forming an improved shallow trench isolation (STI) region are disclosed. Several exemplary techniques are proposed for treating STI sidewalls to improve the silicon (Si) surface at the atomic level. Each of the exemplary methods creates a smooth STI sidewall surface, prior to performing oxidation, by reconstructing silicon atoms at the surface. The suggested STI region can be used in imager pixel cells or memory device applications.
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公开(公告)号：US20080210921A1
公开(公告)日：2008-09-04
申请号：US12073057
申请日：2008-02-28
Applicant: Jiutao Li , Keith Hampton , Allen McTeer
Inventor： Jiutao Li , Keith Hampton , Allen McTeer
IPC: H01L47/00
CPC classification number: H01L21/02631 , C23C14/0021 , C23C14/0623 , C23C14/3407 , C23C14/3492 , C23C14/548 , H01L21/02266 , Y10S428/938 , Y10T428/12896
Abstract: A method of sputter depositing silver selenide and controlling the stoichiometry and nodular defect formations of a sputter deposited silver-selenide film. The method includes depositing silver-selenide using a sputter deposition process at a pressure of about 0.3 mTorr to about 10 mTorr. In accordance with one aspect of the invention, an RF sputter deposition process may be used preferably at pressures of about 2 mTorr to about 3 mTorr. In accordance with another aspect of the invention, a pulse DC sputter deposition process may be used preferably at pressures of about 4 mTorr to about 5 mTorr.
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