公开(公告)号：US20110057213A1

公开(公告)日：2011-03-10

申请号：US12555000

申请日：2009-09-08

申请人： Linda T. ROMANO ,  Parijat Pramil DEB ,  Andrew Y. KIM ,  John F. KAEDING

发明人： Linda T. ROMANO ,  Parijat Pramil DEB ,  Andrew Y. KIM ,  John F. KAEDING

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L33/16 ,  H01L33/32

摘要： A semiconductor structure comprises a III-nitride light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further comprises a curvature control layer grown on a first layer. The curvature control layer is disposed between the n-type region and the first layer. The curvature control layer has a theoretical a-lattice constant less than the theoretical a-lattice constant of GaN. The first layer is a substantially single crystal layer.

摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的III族氮化物发光层。 半导体结构还包括在第一层上生长的曲率控制层。 曲率控制层设置在n型区域和第一层之间。 曲率控制层具有小于GaN的理论a晶格常数的理论晶格常数。 第一层是基本单晶层。

公开(公告)号：US20110284993A1

公开(公告)日：2011-11-24

申请号：US12783354

申请日：2010-05-19

申请人： Andrew Y. KIM

发明人： Andrew Y. KIM

IPC分类号： H01L29/20 ,  H01L21/762

CPC分类号： H01L21/02505 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method according to embodiments of the invention includes providing an epitaxial structure comprising a donor layer and a strained layer. The epitaxial structure is treated to cause the strained layer to relax. Relaxation of the strained layer causes an in-plane lattice constant of the donor layer to change.

摘要翻译： 根据本发明的实施例的方法包括提供包括施主层和应变层的外延结构。 处理外延结构以使应变层松弛。 应变层的松弛导致施主层的面内晶格常数发生变化。

公开(公告)号：US20110284890A1

公开(公告)日：2011-11-24

申请号：US12783197

申请日：2010-05-19

申请人： Andrew Y. KIM ,  Patrick N. GRILLOT

发明人： Andrew Y. KIM ,  Patrick N. GRILLOT

IPC分类号： H01L33/32 ,  H01L21/20

CPC分类号： H01L33/0075 ,  H01L21/02458 ,  H01L21/02505 ,  H01L33/0079 ,  H01L33/12 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： In some embodiments of the invention, a device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, and a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region. The second semiconductor layer is disposed between the first semiconductor layer and the third semiconductor layer. The third semiconductor layer is disposed between the second semiconductor layer and the light emitting layer. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the third semiconductor layer is no more than 1%. A difference between the in-plane lattice constant of the first semiconductor layer and the bulk lattice constant of the second semiconductor layer is at least 1%. The third semiconductor layer is at least partially relaxed.

摘要翻译： 在本发明的一些实施例中，器件包括第一半导体层，第二半导体层，第三半导体层以及包括设置在n型区域和p型区域之间的III族氮化物发光层的半导体结构 。 第二半导体层设置在第一半导体层和第三半导体层之间。 第三半导体层设置在第二半导体层和发光层之间。 第一半导体层的面内晶格常数与第三半导体层的体晶格常数之差不大于1％。 第一半导体层的面内晶格常数与第二半导体层的体晶格常数之差为1％以上。 第三半导体层至少部分松弛。