CHIP ON BOARD DISPLAY DEVICE AND METHOD FOR MAKING THE SAME

    公开(公告)号:US20210242373A1

    公开(公告)日:2021-08-05

    申请号:US17163750

    申请日:2021-02-01

    Abstract: A chip on board (COB) display device includes a substrate, an array of spaced-apart micro light-emitting diode (LED) chips, a light-shielding layer, and an anti-glare layer. The micro LED chips are disposed on the substrate to define thereamong, a recessed portion recessed relative to the micro LED chips. The light-shielding layer is filled in the recessed portion. The anti-glare layer is disposed to cover the light-shielding layer and the micro LED chips, and has a surface which is opposite to the substrate and which is formed with a patterned microstructure. A method for making the COB display device is also disclosed herein.

    METHOD FOR TRANSFERRING MICRO LIGHT EMITTING DIODES

    公开(公告)号:US20210305078A1

    公开(公告)日:2021-09-30

    申请号:US17213753

    申请日:2021-03-26

    Abstract: A method for transferring micro light emitting diodes (micro-LEDs) includes forming a plurality of micro light emitting diode (micro-LED) chips having an epitaxial stacked layer and an electrode on a base; attaching the electrodes of the micro-LED chips to a temporary substrate and removing the base from the micro-LED chips; forming a light shielding layer on the temporary substrate; forming a light-transmissible packaging layer to cover the light shielding layer and the micro-LED chips; removing the temporary substrate to form a light emitting assembly; dividing the light emitting assembly to separate a plurality of pixels constituted by the micro-LEDs; and transferring the pixels to a permanent substrate.

    Mixed light light-emitting diode device

    公开(公告)号:US11929355B2

    公开(公告)日:2024-03-12

    申请号:US17482345

    申请日:2021-09-22

    CPC classification number: H01L25/0753 H01L33/382 H01L33/54 H01L33/58 H01L33/62

    Abstract: A mixed light light-emitting diode device includes first, second, and third chips, each having a first-type semiconductor layer with a first surface, a second-type semiconductor layer with a second surface opposite to the first surface, and a third surface indenting from the first surface and situated on the second-type semiconductor layer. The second and third chips have their first surfaces disposed above and facing the first surface of the first chip. A first-type electrode penetrates through the second and first surfaces of the first chip and contacts all first surfaces of first, second, and third chips. Two second-type electrodes each penetrates through the second and third surfaces of the first chip and connect the first chip to one of the second and third chips.

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