公开(公告)号：US20160041201A1

公开(公告)日：2016-02-11

申请号：US14456827

申请日：2014-08-11

Applicant: MACRONIX International Co., Ltd.

Inventor： Che-Lun Hung ,  Hsiao-Leng Li

IPC: G01R1/07 ,  G01R31/28

CPC classification number: G01R31/307 ,  G01R31/026 ,  G01R31/2884

Abstract: A die structure is described, including a device area and a contact test area. The device area has therein a device structure including a first contact plug. The contact test area has therein a contact test structure that includes a second contact plug and is different from the device structure. The contact test structure is also described, including a well, a heavily doped region in the well, and a contact plug, wherein the heavily doped region and the well are both of N-type or are both of P-type, and the contact plug is disposed over the heavily doped region.

Abstract translation: 描述了一种模具结构，包括设备区域和接触测试区域。 装置区域具有包括第一接触插塞的装置结构。 接触测试区域具有包括第二接触插塞并且与器件结构不同的接触测试结构。 还描述了接触测试结构，包括阱，阱中的重掺杂区域和接触插塞，其中重掺杂区域和阱都是N型或都是P型，并且接触 插头设置在重掺杂区域上。

公开(公告)号：US20160211139A1

公开(公告)日：2016-07-21

申请号：US14598645

申请日：2015-01-16

Applicant: MACRONIX International Co., Ltd.

Inventor： Zong-Jie Ko ,  Hsiao-Leng Li

IPC: H01L21/283 ,  H01L29/66 ,  H01L21/768 ,  H01L29/08

CPC classification number: H01L21/76831 ,  H01L21/283 ,  H01L21/28525 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76897 ,  H01L27/11573 ,  H01L29/0847 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636

Abstract: A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.

Abstract translation: 对半导体装置的接触处理进行说明。 提供了在掺杂区域上具有掺杂区域和介电层的衬底。 通过电介质层形成接触孔，并暴露掺杂区域。 绝缘衬垫层形成在接触孔中。 在接触孔的底部的绝缘衬垫层的一部分被去除蚀刻并进行过蚀刻。 从接触孔中的掺杂区域形成导电外延层，然后用导电材料填充接触孔。

公开(公告)号：US20140253137A1

公开(公告)日：2014-09-11

申请号：US13790253

申请日：2013-03-08

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yen Chuang ,  Che-Lun Hung ,  Hsiao-Leng Li

IPC: G01R31/265 ,  H01L23/00 ,  H01L23/498

CPC classification number: H01L24/64 ,  G01R31/2884 ,  G01R31/307 ,  H01L22/12 ,  H01L22/30

Abstract: Methods and systems for the detection of defects in semiconductors, semiconductor devices, or substrates are provided. Semiconductors, semiconductor devices or substrates having novel test patterns and or designs are also provided. The semiconductors, semiconductor devices or substrates have a plurality of line patterns, which, in response to a responsive stimulus such as electron beam irradiation, produces a response. The responsive stimulus may include an electron beam irradiation, and the image data can be collected and processed to produce an image or images that indicate the presence or absence of surface and/or internal defects.

Abstract translation: 提供了用于检测半导体，半导体器件或衬底中的缺陷的方法和系统。 还提供了具有新颖测试图案和/或设计的半导体，半导体器件或衬底。 半导体，半导体器件或衬底具有多个线图案，其响应于诸如电子束照射的响应刺激而产生响应。 响应刺激可以包括电子束照射，并且可以收集和处理图像数据以产生指示表面和/或内部缺陷的存在或不存在的图像或图像。

公开(公告)号：US09870943B2

公开(公告)日：2018-01-16

申请号：US14598645

申请日：2015-01-16

Applicant: MACRONIX International Co., Ltd.

Inventor： Zong-Jie Ko ,  Hsiao-Leng Li

IPC: H01L23/58 ,  H01L21/768 ,  H01L29/08 ,  H01L21/283 ,  H01L29/417 ,  H01L29/66 ,  H01L27/11573 ,  H01L21/285 ,  H01L29/267

CPC classification number: H01L21/76831 ,  H01L21/283 ,  H01L21/28525 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/76897 ,  H01L27/11573 ,  H01L29/0847 ,  H01L29/267 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636

Abstract: A contact process for a semiconductor device is described. A substrate having a doped region and a dielectric layer over the doped region is provided. A contact hole is formed through the dielectric layer and exposing the doped region. An insulating liner layer is formed a in the contact hole. A portion of the insulating liner layer at a bottom of the contact hole is etch-removed and over-etching is performed. A conductive epitaxial layer is formed from the doped region in the contact hole, and then the contact hole is filled with a conductive material.

公开(公告)号：US20160110859A1

公开(公告)日：2016-04-21

申请号：US14516961

申请日：2014-10-17

Applicant: MACRONIX International Co., Ltd.

Inventor： Tuung Luoh ,  Hsiao-Leng Li ,  Ling-Wuu Yang ,  Ta-Hone Yang ,  Kuang-Chao Chen

IPC: G06T7/00

CPC classification number: G06T7/001 ,  G06T7/12 ,  G06T2207/10056 ,  G06T2207/30148

Abstract: An inspection method for contact by die to database is provided. In the method, a plurality of raw images of contacts in a wafer is obtained, and a plurality of locations of the raw images is then recoded to obtain a graphic file. After that, the graphic file is aligned on a design database of the chip. An image extraction is then performed on the raw images to obtain a plurality of image contours of the contacts. Thereafter, a difference in critical dimension between the image contours of the contacts and corresponding contacts in the design database are measured in order to obtain the inspection result for contacts in the wafer.

Abstract translation: 提供了一种用于与数据库接触的检查方法。 在该方法中，获得晶片中的接触的多个原始图像，然后重新编码原始图像的多个位置以获得图形文件。 之后，图形文件在芯片的设计数据库上对齐。 然后对原始图像执行图像提取以获得联系人的多个图像轮廓。 此后，为了获得晶片中的触点的检查结果，测量了触点的图像轮廓与设计数据库中的对应触点之间的临界尺寸差异。