CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION METHOD
    2.
    发明申请
    CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION METHOD 审中-公开
    化学蒸气沉积装置和化学气相沉积方法

    公开(公告)号:US20160333478A1

    公开(公告)日:2016-11-17

    申请号:US15110347

    申请日:2015-01-09

    IPC分类号: C23C16/455

    摘要: A chemical vapor deposition apparatus includes: a reaction chamber in which deposition materials are housed a gas supply tube provided in the reaction chamber and a rotary drive device that rotates the gas supply tube about a rotation axis. A an inside of the gas supply tube is divided into a first gas flowing section and a second gas flowing section both of which extend along the rotation axis. A first gas ejection port ejects a first gas flowing in the first gas flowing section into the reaction chamber, and a second gas ejection port ejects a second gas flowing in the second gas flowing section into the reaction chamber. The first port and the second port form an ejection port pair in a plane perpendicular to the rotation axis.

    摘要翻译: 化学气相沉积装置包括:反应室,其中容纳有设置在反应室中的气体供给管的沉积材料;以及使气体供给管绕旋转轴线旋转的旋转驱动装置。 气体供给管的内部分为第一气体流通部分和第二气体流动部分,两者都沿旋转轴线延伸。 第一气体喷射口将在第一气体流动部分中流动的第一气体喷射到反应室中,并且第二气体喷射口将在第二气体流动部分中流动的第二气体喷射到反应室中。 第一端口和第二端口在垂直于旋转轴线的平面中形成弹出端口对。

    CHEMICAL VAPOR DEPOSITION APPARATUS AND CHEMICAL VAPOR DEPOSITION METHOD

    公开(公告)号:US20180195172A1

    公开(公告)日:2018-07-12

    申请号:US15740951

    申请日:2016-07-08

    IPC分类号: C23C16/455 C23C16/34

    摘要: A chemical vapor deposition apparatus includes a reaction chamber in which a deposition material is accommodated, a gas supply tube provided in the reaction chamber, and a rotary drive device that rotates the gas supply tube around a rotation axis in the reaction chamber, in which an inside of the gas supply tube is partitioned into the first and second gas flowing sections extending along the rotation axis, a set of gas ejection ports including at least three or more the gas ejection ports disposed, lying next to each other in the circumferential direction is installed on the tube wall, and the set of gas ejection ports includes at least one of a first gas ejection port ejecting the first gas flowing through the first gas flowing section, and at least one of the second gas ejection port ejecting a second gas flowing through the second gas flowing section.

    SURFACE-COATED CUTTING TOOL
    4.
    发明申请

    公开(公告)号:US20170182567A1

    公开(公告)日:2017-06-29

    申请号:US15312922

    申请日:2015-05-29

    摘要: In a surface-coated cutting tool, a hard coating layer composed of a lower layer and an upper layer is deposited on a surface of a tool body made of a WC-based cemented carbide or a TiCN-based cermet. The lower layer has at least one Ti compound layer made of a TiCN layer and the upper layer is made of an α-type Al2O3 layer. In a case where, regarding Al2O3 crystal grains of the entire upper layer, a constituent atom-sharing lattice point distribution is measured, a highest peak is present in Σ3, and a distribution ratio of Σ3 is 70% or more. A ratio of a Σ3-coincidence grain boundary continuing from an interface between the lower layer and the upper layer to an outermost surface of the upper layer is 60% or more of a Σ3-coincidence grain boundary of the upper layer.

    SURFACE-COATED CUTTING TOOL
    6.
    发明申请

    公开(公告)号:US20190003060A1

    公开(公告)日:2019-01-03

    申请号:US15735889

    申请日:2016-06-23

    摘要: A surface-coated cutting tool includes a tool body made of a tungsten carbide-based cemented carbide or a titanium carbonitride-based cermet and a hard coating layer that includes a lower layer and an upper layer and formed on the tool body. The lower layer is composed of a Ti compound layer including at least a TiCN layer. The upper layer includes an Al2O3 layer having an α-type crystal structure. In the Al2O3 crystal grains of the upper layer, when a coincidence grain boundary distribution graph is measured, sulfur is segregated in a grain boundary of Σ31 or more and a grain boundary length thereof is 20% to 50% relative to the whole grain boundary length in the constituent atom sharing lattice point form of Σ3 or more. Absolute values of residual stress of a flank face and a rake face are 100 MPa or less.