公开(公告)号：US20030026575A1

公开(公告)日：2003-02-06

申请号：US09919927

申请日：2001-08-02

Applicant: MOTOROLA, INC.

Inventor： Robert B. Lempkowski

IPC: G02B006/10

CPC classification number: G02B6/10 ,  G02B6/12002 ,  G02B6/12004 ,  G02B6/12007 ,  G02B6/131 ,  G02B6/132 ,  G02B6/42 ,  G02B6/43 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12169 ,  G02B2006/12176 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02546 ,  H01S5/021 ,  H01S5/026 ,  H01S2301/173

Abstract: Optical waveguide structures including optical filters can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract translation: 包括光学滤波器的光波导结构可以使用具有单晶硅衬底，覆盖单晶硅衬底的非晶氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料的半导体结构和覆盖单晶钙钛矿的单晶化合物半导体材料 氧化物材料和/或其它类型的材料，例如金属和非金属。

公开(公告)号：US20030201852A1

公开(公告)日：2003-10-30

申请号：US10133913

申请日：2002-04-26

Applicant: Motorola, Inc.

Inventor： Manes Eliacin ,  Keryn Lian ,  Junhua Liu ,  Robert B. Lempkowski

IPC: H01P001/10

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01H2001/0073 ,  H01H2059/0054

Abstract: A meso-scale MEMS device having a cantilevered beam is formed using standard printed wiring board and high density interconnect technologies and practices. The beam includes at least some polymer material to constitute its length, and in some embodiments also comprises a conductive material as a load-bearing component thereof. In varying embodiments, the beam is attached at a location proximal to an end thereof, or distal to an end thereof.

Abstract translation: 使用标准印刷线路板和高密度互连技术和实践形成具有悬臂梁的中尺度MEMS器件。 梁包括构成其长度的至少一些聚合物材料，并且在一些实施例中还包括作为其承载部件的导电材料。 在不同的实施例中，梁被附接在靠近其端部的位置处，或者远离其端部。

公开(公告)号：US20030006417A1

公开(公告)日：2003-01-09

申请号：US09897059

申请日：2001-07-03

Applicant: MOTOROLA, INC.

Inventor： Tomasz L. Klosowiak ,  Daniel R. Gamota ,  Robert B. Lempkowski

IPC: H01L027/15 ,  H01L031/12 ,  H01L033/00

CPC classification number: G02B26/0858 ,  H01L41/319

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. Further, various shaped piezoelectric structures having optical surfaces may be disposed on the overlying monocrystalline layer for optical switching and controlled manipulation of light signals.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 此外，具有光学表面的各种成形的压电结构可以设置在上覆的单晶层上，用于光信号的光学切换和受控操纵。