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    Semiconductor light emitting device with an aluminum containing layer formed thereon
    1.
    发明授权
    Semiconductor light emitting device with an aluminum containing layer formed thereon 有权
    其上形成有铝层的半导体发光器件

    公开(公告)号：US09093588B2

    公开(公告)日：2015-07-28

    申请号：US13032907

    申请日：2011-02-23

    申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/26 ,  H01L33/06 ,  H01L33/32

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US08649408B2

    公开(公告)日：2014-02-11

    申请号：US12874440

    申请日：2010-09-02

    申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/2231 ,  H01S5/02461

    摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

    摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

    Semiconductor laser device and method of manufacturing the same
    4.
    发明授权
    Semiconductor laser device and method of manufacturing the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US08457167B2

    公开(公告)日：2013-06-04

    申请号：US12873821

    申请日：2010-09-01

    申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Jongil Hwang ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01S5/00

    CPC分类号： H01L33/30 ,  H01S5/22 ,  H01S5/323

    摘要： Embodiments describe a semiconductor laser device driven at low voltage and which is excellent for cleavage and a method of manufacturing the device. In one embodiment, the semiconductor laser device includes a GaN substrate; a semiconductor layer formed on the GaN substrate; a ridge formed in the semiconductor layer; a recess formed in the bottom surface of the GaN substrate. The recess has a depth less than the thickness of the GaN substrate. The device also has a notch deeper than the recess formed on a side surface of the GaN substrate and separated from the recess. In the semiconductor laser device, the total thickness of the GaN substrate and the semiconductor layer is 100 μm or more, and the distance between the top surface of the ridge and the bottom surface of the recess is 5 μm or more and 50 μm or less.

    摘要翻译： 实施例描述了在低电压下驱动且对于切割非常好的半导体激光器件及其制造方法。 在一个实施例中，半导体激光器件包括GaN衬底; 形成在所述GaN衬底上的半导体层; 形成在半导体层中的脊; 形成在GaN衬底的底表面中的凹部。 凹槽的深度小于GaN衬底的厚度。 该器件还具有比形成在GaN衬底的侧表面上的凹部更深的凹口，并且与凹部分离。 在半导体激光器件中，GaN衬底和半导体层的总厚度为100μm以上，并且，突起的顶面与凹部的底面之间的距离为5μm以上且50μm以下。 。

    SEMICONDUCTOR LASER DEVICE
    5.
    发明申请
    SEMICONDUCTOR LASER DEVICE 有权
    半导体激光器件

    公开(公告)号：US20110216799A1

    公开(公告)日：2011-09-08

    申请号：US12874440

    申请日：2010-09-02

    申请人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Rei Hashimoto ,  Maki Sugai ,  Jongil Hwang ,  Yasushi Hattori ,  Shinji Saito ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01S5/223 ,  H01S5/323

    CPC分类号： H01S5/2231 ,  H01S5/02461

    摘要： According to one embodiment, a semiconductor laser device with high reliability and excellent heat dissipation is provided. The semiconductor laser device includes an active layer, a p-type semiconductor layer on the active layer, a pair of grooves formed by etching into the p-type semiconductor layer, a stripe sandwiched by the pair of grooves and having shape of ridge, and a pair of buried layers made of insulator to bury the grooves. The bottom surfaces of the grooves are shallower with an increase in distance from the stripe.

    摘要翻译： 根据一个实施例，提供了具有高可靠性和优异散热的半导体激光器件。 半导体激光器件包括有源层，有源层上的p型半导体层，通过蚀刻到p型半导体层中形成的一对沟槽，被一对沟槽夹着的条纹并具有脊状，以及 一对由绝缘体制成的掩埋层，以埋置凹槽。 沟槽的底面随着条纹的距离增加而变浅。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    6.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20110051769A1

    公开(公告)日：2011-03-03

    申请号：US12719468

    申请日：2010-03-08

    申请人： Maki SUGAI ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

    发明人： Maki SUGAI ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

    IPC分类号： H01S5/323 ,  H01S5/32

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/164 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3063 ,  H01S2301/18

    摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion

    摘要翻译： 一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。 发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。 第二半导体层包括脊部和宽部。 沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。 沿着第二方向的宽部的宽度比脊部宽。 沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

    Semiconductor light emitting device
    7.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US08432947B2

    公开(公告)日：2013-04-30

    申请号：US12719468

    申请日：2010-03-08

    申请人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

    发明人： Maki Sugai ,  Shinji Saito ,  Rei Hashimoto ,  Yasushi Hattori ,  Shinya Nunoue

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1039 ,  H01S5/16 ,  H01S5/164 ,  H01S5/2009 ,  H01S5/2214 ,  H01S5/3063 ,  H01S2301/18

    摘要： A semiconductor light emitting device includes: a stacked body including a first and a second semiconductor layers of a first and second conductivity types respectively, and a light emitting layer provided between thereof; a first and a second electrodes in contact with the first and second semiconductor layers respectively. Light emitted is resonated between first and second end surfaces of the stacked body opposed in a first direction. The second semiconductor layer includes a ridge portion and a wide portion. A width of the ridge portion along a second direction perpendicular to the first and the stacking directions is narrower on the second electrode side than on the light emitting layer side. A width of the wide portion along the second direction is wider than the ridge portion. A width of the narrow part of the second electrode along the second direction is narrower than that on the ridge portion

    摘要翻译： 一种半导体发光器件包括：分别包括第一和第二导电类型的第一和第二半导体层的层叠体，以及设置在其间的发光层; 分别与第一和第二半导体层接触的第一和第二电极。 发射的光在第一方向上相对的层叠体的第一和第二端面之间共振。 第二半导体层包括脊部和宽部。 沿着与第一方向垂直的第二方向和堆叠方向的脊部的宽度在第二电极侧比在发光层侧窄。 沿着第二方向的宽部的宽度比脊部宽。 沿着第二方向的第二电极的窄部的宽度比脊部的宽度窄

    Semiconductor light-emitting device
    8.
    发明授权
    Semiconductor light-emitting device 有权
    半导体发光装置

    公开(公告)号：US08369375B2

    公开(公告)日：2013-02-05

    申请号：US12729636

    申请日：2010-03-23

    申请人： Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

    发明人： Yasushi Hattori ,  Rei Hashimoto ,  Shinji Saito ,  Maki Sugai ,  Shinya Nunoue

    IPC分类号： H01S3/04 ,  H01S5/00 ,  H01S3/091

    CPC分类号： H01S5/02296 ,  H01S5/005 ,  H01S5/021 ,  H01S5/0213 ,  H01S5/02216 ,  H01S5/0228 ,  H01S5/32341 ,  H01S5/327

    摘要： Disclosed is a semiconductor light-emitting device including a package having a light outlet, a semiconductor laser diode disposed in the package and radiating a light having a first wavelength falling within a range of ultraviolet ray to visible light, and a visible-light-emitter containing a phosphor which absorbs a light radiated from the semiconductor laser diode and emits a visible light having a second wavelength differing from the first wavelength, the visible-light-emitter being disposed on an optical path of the laser diode and a peripheral edge of the visible-light-emitter being in contact with the package.

    摘要翻译： 公开了一种半导体发光装置，其包括具有出光口的封装，设置在封装中的半导体激光二极管，并将具有落入紫外线范围内的第一波长的光照射到可见光，以及可见光发射极 所述荧光物质吸收从所述半导体激光二极管照射的光并发射具有与所述第一波长不同的第二波长的可见光，所述可见光发射极配置在所述激光二极管的光路上， 可见光发射器与封装件接触。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20120007113A1

    公开(公告)日：2012-01-12

    申请号：US13032907

    申请日：2011-02-23

    申请人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    发明人： Jongil Hwang ,  Shinji Saito ,  Maki Sugai ,  Rei Hashimoto ,  Yasushi Hattori ,  Masaki Tohyama ,  Shinya Nunoue

    IPC分类号： H01L33/26

    CPC分类号： H01L33/06 ,  H01L33/32

    摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, a well layer, a barrier layer, an Al-containing layer, and an intermediate layer. The p-type semiconductor layer is provided on a side of [0001] direction of the n-type semiconductor layer. The well layer, the barrier layer, the Al-containing layer and the intermediate layer are disposed between the n-type semiconductor layer and the p-type semiconductor layer subsequently. The Al-containing layer has a larger band gap energy than the barrier layer, a smaller lattice constant than the n-type semiconductor layer, and a composition of Alx1Ga1-x1-y1Iny1N. The intermediate layer has a larger band gap energy than the well layer, and has a first portion and a second portion provided between the first portion and the p-type semiconductor layer. A band gap energy of the first portion is smaller than that of the second portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层，阱层，阻挡层，含Al层和中间层。 p型半导体层设置在n型半导体层的[0001]方向的一侧。 阱层，阻挡层，含Al层和中间层随后设置在n型半导体层和p型半导体层之间。 含Al层具有比阻挡层更大的带隙能量，比n型半导体层更小的晶格常数以及Al x Ga 1-x 1-y 1 In y N 1的组成。 中间层具有比阱层更大的带隙能量，并且具有设置在第一部分和p型半导体层之间的第一部分和第二部分。 第一部分的带隙能量小于第二部分的带隙能量。