公开(公告)号：US20100148203A1

公开(公告)日：2010-06-17

申请号：US12638354

申请日：2009-12-15

申请人： Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

发明人： Rei HASHIMOTO ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/507 ,  H01L33/644 ,  H01S5/02292 ,  H01S5/32341

摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

摘要翻译： 提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形 在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件 荧光体层的。

公开(公告)号：US07985981B2

公开(公告)日：2011-07-26

申请号：US12638354

申请日：2009-12-15

申请人： Rei Hashimoto ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

发明人： Rei Hashimoto ,  Yasushi Hattori ,  Takahiro Sato ,  Jongil Hwang ,  Maki Sugai ,  Yoshiyuki Harada ,  Shinji Saito ,  Shinya Nunoue

IPC分类号： H01L33/00 ,  H01L33/58

CPC分类号： H01L33/507 ,  H01L33/644 ,  H01S5/02292 ,  H01S5/32341

摘要： There is provided a semiconductor light-emitting device including a semiconductor light-emitting element, a phosphor layer disposed in a light path of a light emitted from the semiconductor light-emitting element, containing a phosphor to be excited by the light and having a cross-section in a region of a diameter which is 1 mm larger than that of a cross-section of the light path, and a heat-releasing member disposed in contact with at least a portion of the phosphor layer and exhibiting a higher thermal conductance than that of the phosphor layer.

摘要翻译： 提供了一种半导体发光器件，其包括半导体发光元件，荧光体层，其设置在从半导体发光元件发射的光的光路中，该荧光体层含有被光激发的荧光体并具有十字形 在比直径大于光路截面1mm的区域的区域，以及与至少一部分荧光体层接触并且显示出比较高的导热性的散热构件 荧光体层的。

公开(公告)号：US20110222149A1

公开(公告)日：2011-09-15

申请号：US12874778

申请日：2010-09-02

申请人： Shinji SAITO ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Shinji SAITO ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： G03B21/56 ,  F21V9/16 ,  H01J1/62 ,  B05D5/00

CPC分类号： G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

摘要翻译： 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

公开(公告)号：US08450918B2

公开(公告)日：2013-05-28

申请号：US12874778

申请日：2010-09-02

申请人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Shinji Saito ,  Yasushi Hattori ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： F21V9/16 ,  G02B26/00

CPC分类号： G03B21/204 ,  F21K9/232 ,  F21K9/64 ,  H01L33/504

摘要： According to the embodiments, an easy-to-fabricate light-emitting apparatus is provided in which a plurality of phosphors is disposed so as not to overlap each other. The light-emitting apparatus includes a light source that emits excitation light; a substrate having a protrusion and recess configuration where first planes and second planes which intersect the first planes are formed periodically; first phosphor layers formed on the first planes and absorbing the excitation light to emit a first fluorescence; and second phosphor layers formed on the second planes and absorbing the excitation light to emit a second fluorescence with a wavelength different from that of the first fluorescence.

摘要翻译： 根据实施例，提供了一种易于制造的发光装置，其中多个荧光体被布置为不彼此重叠。 发光装置包括发射激发光的光源; 具有突起和凹部构造的基板，其中周期性地形成与第一平面相交的第一平面和第二平面; 形成在第一平面上并吸收激发光以发射第一荧光的第一荧光体层; 以及形成在所述第二平面上并吸收所述激发光以发射具有与所述第一荧光的波长不同的波长的第二荧光的第二荧光体层。

公开(公告)号：US08829544B2

公开(公告)日：2014-09-09

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L33/32 ,  H01L33/20 ,  H01L33/12

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US08564006B2

公开(公告)日：2013-10-22

申请号：US13405985

申请日：2012-02-27

申请人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi Tachibana ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US08823016B2

公开(公告)日：2014-09-02

申请号：US13404553

申请日：2012-02-24

申请人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki Hikosaka ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L29/24 ,  H01L33/12 ,  H01L33/32 ,  H01L29/12 ,  C30B29/40 ,  H01L33/00

CPC分类号： H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。 主表面与发光层相对。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。

公开(公告)号：US20120299015A1

公开(公告)日：2012-11-29

申请号：US13405985

申请日：2012-02-27

申请人： Koichi TACHIBANA ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

发明人： Koichi TACHIBANA ,  Hisashi Yoshida ,  Hiroshi Ono ,  Hajime Nago ,  Yoshiyuki Harada ,  Toshiki Hikosaka ,  Maki Sugai ,  Toshiyuki Oka ,  Shinya Nunoue

IPC分类号： H01L33/20 ,  H01L29/04

CPC分类号： H01L33/20 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

摘要： According to one embodiment, a nitride semiconductor device includes a substrate and a semiconductor functional layer. The substrate is a single crystal. The semiconductor functional layer is provided on a major surface of the substrate and includes a nitride semiconductor. The substrate includes a plurality of structural bodies disposed in the major surface. Each of the plurality of structural bodies is a protrusion provided on the major surface or a recess provided on the major surface. An absolute value of an angle between a nearest direction of an arrangement of the plurality of structural bodies and a nearest direction of a crystal lattice of the substrate in a plane parallel to the major surface is not less than 1 degree and not more than 10 degrees.

摘要翻译： 根据一个实施例，氮化物半导体器件包括衬底和半导体功能层。 衬底是单晶。 半导体功能层设置在基板的主表面上并且包括氮化物半导体。 基板包括设置在主表面中的多个结构体。 多个结构体中的每一个是设置在主表面上的突起或设置在主表面上的凹部。 多个结构体的排列的最近方向与平行于主表面的平面中的基板的晶格的最近方向之间的角度的绝对值不小于1度且不大于10度 。

公开(公告)号：US20120299014A1

公开(公告)日：2012-11-29

申请号：US13404553

申请日：2012-02-24

申请人： Toshiki HIKOSAKA ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

发明人： Toshiki HIKOSAKA ,  Yoshiyuki Harada ,  Maki Sugai ,  Shinya Nunoue

IPC分类号： H01L29/24 ,  H01L29/12 ,  H01L33/32

CPC分类号： H01L33/06 ,  C30B29/406 ,  H01L33/007 ,  H01L33/12 ,  H01L33/32

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，并具有主表面，第二导电类型的第二半导体层和设置在第一和第二半导体层之间的发光层。 主表面与发光层相反。 第一半导体层具有设置在主表面上的结构体。 结构体是凹陷或突起。 第一结构体的质心与最靠近第一结构的第二结构体的质心对齐。 hb，rb和Rb满足rb /（2·hb）＆nlE; 0.7和rb / Rb <1，其中hb是凹部的深度，rb是凹部的底部的宽度，Rb是 突起的宽度。

公开(公告)号：US20100187497A1

公开(公告)日：2010-07-29

申请号：US12716668

申请日：2010-03-03

申请人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

发明人： Hajime NAGO ,  Koichi Tachibana ,  Shinji Saito ,  Yoshiyuki Harada ,  Shinya Nunoue

IPC分类号： H01L33/32

CPC分类号： H01L33/32 ,  H01L33/06

摘要： A semiconductor device includes an underlying layer, and a light emitting layer which is formed on the underlying layer and in which a barrier layer made of InAlGaN and a quantum well layer made of InGaN are alternately stacked.

摘要翻译： 半导体器件包括下层，并且形成在下层上并且其中由InAlGaN制成的势垒层和由InGaN制成的量子阱层的发光层交替堆叠。