METHOD FOR PRODUCING POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING POLYIMIDE
    7.
    发明申请
    METHOD FOR PRODUCING POLYIMIDE PRECURSOR AND METHOD FOR PRODUCING POLYIMIDE 有权
    生产聚酰亚胺前体的方法和生产聚酰亚胺的方法

    公开(公告)号:US20160122474A1

    公开(公告)日:2016-05-05

    申请号:US14892643

    申请日:2014-05-19

    申请人: Chiyoshi NOZAKI

    发明人: Chiyoshi Nozaki

    IPC分类号: C08G73/10

    摘要: A method for producing a polyimide precursor, including: reacting tetracarboxylic dianhydride represented by the following General Formula (1) with a diamine compound represented by the following General Formula (2) in a compressive fluid to thereby produce a polyimide precursor represented by the following Formula (3): where, X in the General Formulae (1) and (3) denotes a tetravalent aromatic group or a tetravalent alicyclic group, Y in the General Formulae (2) and (3) denotes a divalent organic group, and n denotes the number of repetitions.

    摘要翻译: 1.一种聚酰亚胺前体的制造方法,其特征在于,在压缩流体中使由以下通式(1)表示的四羧酸二酐与下述通式(2)表示的二胺化合物反应,得到下述式 (3)表示:通式(1)和(3)中的X表示四价芳香族基团或四价脂肪族基团,通式(2)和(3)中的Y表示二价有机基团,n表示 重复次数。

    SEMICONDUCTIVE MEMBER, AND DEVELOPING ROLL, CHARGING ROLL, TRANSFER BELT, AND IMAGE FORMING APPARATUS USING SAME
    10.
    发明申请
    SEMICONDUCTIVE MEMBER, AND DEVELOPING ROLL, CHARGING ROLL, TRANSFER BELT, AND IMAGE FORMING APPARATUS USING SAME 有权
    半导体成员和开发滚子,充电滚筒,转印带和使用相同的图像形成装置

    公开(公告)号:US20100150609A1

    公开(公告)日:2010-06-17

    申请号:US12622692

    申请日:2009-11-20

    IPC分类号: G03G15/00 H01B1/02 H01B1/04

    摘要: A semiconductive member including an alkali metal salt having the formula (M)n·X in a surface layer thereof. M represents Na+, K+, or Li+; X represents Cl−, Br−, I−, F−, CH3COO−, CF3COO−, CH(COOH)CHCOO−, (CHCOO−)2, CH2(COOH)CH2COO−, (CH2COO−)2, (HOOC)Ar(COO−), Ar(COO−)2, (HOOC)2Ar(COO−), (HOOC)Ar(COO−)2, Ar(COO−)3, (HOOC)3Ar(COO−), (HOOC)2Ar(COO−)2, (HOOC)Ar (COO−)3, Ar(COO−)4, Ar—SO3−, Ar(SO3−)2, an oligomer or a polymer having an acrylic acid anion unit, or an oligomer or a polymer having an methacrylic acid anion unit; Ar represents a benzene ring, a naphthalene ring, or a biphenyl ring; and n is a numeral equivalent to the anionic valence of X.

    摘要翻译: 包含其表面层中具有式(M)n·X的碱金属盐的半导体构件。 M表示Na +,K +或Li +; X代表Cl-,Br-,I-,F-,CH3COO-,CF3COO-,CH(COOH)CHCOO-,(CHCOO-)2,CH2(COOH)CH2COO-,(CH2COO-)2,(HOOC) (COO-)2,(COO-)2,(HOOC)2,(COO-),(HOOC)Ar(COO-)2,Ar(COO-)3,(HOOC) 2Ar(COO-)2,(HOOC)Ar(COO-)3,Ar(COO-)4,Ar-SO3-,Ar(SO3-)2,具有丙烯酸阴离子单元的低聚物或聚合物, 低聚物或具有甲基丙烯酸阴离子单元的聚合物; Ar表示苯环,萘环或联苯环; 和n是等价于X的阴离子价数的数字。