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公开(公告)号：US20100329295A1
公开(公告)日：2010-12-30
申请号：US12797111
申请日：2010-06-09
IPC分类号： H01S5/0625
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/0425 , H01S5/22
摘要： A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.
摘要翻译： 激光二极管包括：多个彼此平行布置的条形激光器结构，并且包括下包层，有源层和上覆层; 多个条形上电极单独地形成在各个激光器结构的顶面上，并且电连接到上包层; 多个布线层至少单独并电连接到各个上电极之一; 以及多个焊盘电极，其形成在与所述多个激光结构的区域不同的区域中，并且其间布线层电连接到各个上电极之一。 各个布线层的各个布线层与上部电极接触的区域的端部不同。
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公开(公告)号：US08619829B2
公开(公告)日：2013-12-31
申请号：US12813235
申请日：2010-06-10
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译： 本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。
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公开(公告)号：US08619826B2
公开(公告)日：2013-12-31
申请号：US12797111
申请日：2010-06-09
IPC分类号： H01S3/00
CPC分类号： H01S5/4031 , H01S5/0421 , H01S5/0425 , H01S5/22
摘要： A laser diode includes: a plurality of strip-shaped laser structures arranged in parallel with each other, and including a lower cladding layer, an active layer, and an upper cladding layer in this order; a plurality of strip-shaped upper electrodes singly formed on a top face of the respective laser structures, and being electrically connected to the upper cladding layer; a plurality of wiring layers being at least singly and electrically connected to one of the respective upper electrodes; and a plurality of pad electrodes formed in a region different from that of the plurality of laser structures, and being electrically connected to one of the respective upper electrodes with the wiring layer in between. The respective wiring layers have an end in a region different from a region where the respective wiring layers are contacted with the upper electrode.
摘要翻译： 激光二极管包括：多个彼此平行布置的条形激光器结构，并且包括下包层，有源层和上覆层; 多个条形上电极单独地形成在各个激光器结构的顶面上，并且电连接到上包层; 多个布线层至少单独并电连接到各个上电极之一; 以及多个焊盘电极，其形成在与所述多个激光结构的区域不同的区域中，并且其间布线层电连接到各个上电极之一。 各个布线层的各个布线层与上部电极接触的区域的端部不同。
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公开(公告)号：US20110002354A1
公开(公告)日：2011-01-06
申请号：US12813235
申请日：2010-06-10
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/2275
摘要： The present invention provides a semiconductor laser device including: a plurality of light emitting sections arranged in strip shapes in parallel; a plurality of first electrodes arranged along top faces of the light emitting sections, respectively; an insulating film covering a whole surface of the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively; a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes; a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively; and a plurality of window regions arranged for the light emitting sections in the insulating film so as to expose the first electrodes, respectively, and including at least two window regions having areas different from each other.
摘要翻译： 本发明提供一种半导体激光装置，包括：多个发光部分，其平行排列成条状; 分别沿着所述发光部的顶面配置的多个第一电极; 覆盖所述多个第一电极的整个表面的绝缘膜，并且分别包括对应于所述第一电极的接触孔; 与所述多个发光部的位置不同的多个第二电极，对应于所述第一电极; 布置在所述绝缘层上的多个布线层，并分别通过所述接触孔与所述第二电极和所述对应的第一电极电连接; 以及多个窗口区域，其布置成用于绝缘膜中的发光部分，以分别暴露第一电极，并且包括至少两个具有彼此不同区域的窗口区域。
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公开(公告)号：US08802458B2
公开(公告)日：2014-08-12
申请号：US13348501
申请日：2012-01-11
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译： 提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。 激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。
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公开(公告)号：US08130804B2
公开(公告)日：2012-03-06
申请号：US12604853
申请日：2009-10-23
IPC分类号： H01S5/00
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译： 提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。 激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。
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公开(公告)号：US20100111129A1
公开(公告)日：2010-05-06
申请号：US12604853
申请日：2009-10-23
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译： 提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。 激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。
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公开(公告)号：US20120107972A1
公开(公告)日：2012-05-03
申请号：US13348501
申请日：2012-01-11
IPC分类号： H01L33/36
CPC分类号： H01S5/4031 , H01S5/02276 , H01S5/0425 , H01S5/22 , H01S2301/14 , H01S2301/176
摘要： A laser diode capable of independently driving each ridge section, and inhibiting rotation of a polarization angle resulting from a stress applied to the ridge section without lowering reliability and a method of manufacturing the same are provided. A laser diode includes: three or more strip-like ridge sections in parallel with each other with a strip-like trench in between, including at least a lower cladding layer, an active layer, and an upper cladding layer in this order; an upper electrode on a top face of each ridge section, being electrically connected to the upper cladding layer; a wiring layer electrically connected to the upper electrode, in the air at least over the trench; and a pad electrode in a region different from regions of both the ridge section and the trench, being electrically connected to the upper electrode through the wiring layer.
摘要翻译： 提供能够独立地驱动每个脊部的激光二极管，并且抑制由于施加到脊部的应力而导致的偏振角的旋转而不降低可靠性及其制造方法。 激光二极管包括：三个或更多个带状脊部部分，其间具有彼此平行的带状沟槽，其间依次包括至少下包层，有源层和上包层; 每个脊部的顶面上的上电极，与上包层电连接; 在空气中至少在沟槽上方电连接到上电极的布线层; 以及与脊部和沟槽的区域不同的区域中的焊盘电极，通过布线层与上部电极电连接。
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9.发明申请SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING UNDERLYING LAYER 审中-公开半导体发光器件，其制造方法和形成下层的方法公开(公告)号：US20120009711A1
公开(公告)日：2012-01-12
申请号：US13238590
申请日：2011-09-21
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
CPC分类号： H01L33/20 , H01L33/24 , H01S5/0207 , H01S5/2201 , H01S5/2222 , H01S5/2226 , H01S5/2227 , H01S5/227 , H01S5/3203 , H01S2304/04
摘要： A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.
摘要翻译： 一种制造半导体发光器件的方法，包括：（A）构造成在具有{100}面作为主表面的基底的主表面上形成的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。
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公开(公告)号：US20100019255A1
公开(公告)日：2010-01-28
申请号：US12311916
申请日：2008-05-20
申请人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
发明人： Sachio Karino , Eiji Takase , Makoto Oogane , Tsuyoshi Nagatake , Michiru Kamada , Hironobu Narui , Nobukata Okano
IPC分类号： H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/145 , H01S5/2201 , H01S5/2222 , H01S5/2223 , H01S5/305 , H01S5/3054 , H01S5/3072 , H01S5/3077 , H01S5/3211 , H01S5/3432
摘要： There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) includes an impurity in the third layer (43) at a substitution site which is competitive with a substitution site of the impurity in the fourth layer (44), for imparting the second conductivity type to the fourth layer (44).
摘要翻译： 提供一种半导体发光器件，其能够进一步减小电流阻挡层中的漏电流，并且包括（A）由第一化合物半导体层（简称为层）构成的发光部（20） （21），具有第一导电类型的有源层（23）和具有第二导电类型的第二层（22），和（B）与所述第二导电类型的侧面接触的电流阻挡层（40） 发光部分，并且由具有第一导电类型的第三层（43）和具有第二导电类型的第四层（44）组成，其中用于赋予第一层（21）的第一导电类型的杂质包括杂质 在与第二层（22）中的杂质的取代部位不具竞争力的取代位置处的第一层（21）中，用于将第二导电类型赋予第二层（22），并且用于赋予第一层 导电类型到th 第三层（43）在与第四层（44）中的杂质的取代位置竞争的取代位置处包含在第三层（43）中的杂质，用于将第二导电类型赋予第四层（44） ）。
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