公开(公告)号：US07915625B2

公开(公告)日：2011-03-29

申请号：US12208855

申请日：2008-09-11

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

摘要翻译： 本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成， 掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与 第三化合物半导体层中的杂质的取代位置。

公开(公告)号：US20090072253A1

公开(公告)日：2009-03-19

申请号：US12208776

申请日：2008-09-11

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3203 ,  H01S2304/04

摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

摘要翻译： 本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并且通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

公开(公告)号：US20120009711A1

公开(公告)日：2012-01-12

申请号：US13238590

申请日：2011-09-21

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3203 ,  H01S2304/04

摘要： A method of making a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

摘要翻译： 一种制造半导体发光器件的方法，包括：（A）构造成在具有{100}面作为主表面的基底的主表面上形成的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

公开(公告)号：US20070086499A1

公开(公告)日：2007-04-19

申请号：US11613586

申请日：2006-12-20

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof. The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度是非氧化区域的宽度的一倍以上或其以上的七倍以下。 电流限制层与有源层之间的距离优选为50nm以上，500nm以下，更优选为180nm以上。

公开(公告)号：US20050139856A1

公开(公告)日：2005-06-30

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01S5/343 ,  H01L29/24 ,  H01L29/26 ,  H01S5/183 ,  H01S5/22

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US08058660B2

公开(公告)日：2011-11-15

申请号：US12208776

申请日：2008-09-11

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/24 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/227 ,  H01S5/3203 ,  H01S2304/04

摘要： Disclosed herein is a semiconductor light emitting device including: (A) an underlying layer configured to be formed on a major surface of a substrate having a {100} plane as the major surface; (B) a light emitting part; and (C) a current block layer, wherein the underlying layer is composed of a III-V compound semiconductor and is formed on the major surface of the substrate by epitaxial growth, the underlying layer extends in parallel to a direction of the substrate, a sectional shape of the underlying layer obtained when the underlying layer is cut along a virtual plane perpendicular to the direction of the substrate is a trapezoid, and oblique surfaces of the underlying layer corresponding to two oblique sides of the trapezoid are {111}B planes, and the top surface of the underlying layer corresponding to an upper side of the trapezoid is a {100} plane.

摘要翻译： 本发明公开了一种半导体发光器件，包括：（A）被配置为形成在具有{100}面作为主表面的基片的主表面上的下层; （B）发光部; 和（C）当前阻挡层，其中下层由III-V族化合物半导体构成，并通过外延生长形成在衬底的主表面上，下层沿平行于 衬底，当沿着垂直于衬底的<110>方向的虚拟平面切割下层时获得的下层的截面形状是梯形，并且与梯形的两个斜边对应的下层的倾斜表面是 {111} B平面，并且与梯形的上侧相对应的下层的顶面是{100}面。

公开(公告)号：US07332744B2

公开(公告)日：2008-02-19

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US08344414B2

公开(公告)日：2013-01-01

申请号：US12805086

申请日：2010-07-12

申请人： Tsuyoshi Nagatake ,  Jugo Mitomo

发明人： Tsuyoshi Nagatake ,  Jugo Mitomo

IPC分类号： H01L33/00

CPC分类号： H01L33/12 ,  H01L33/02

摘要： A semiconductor light emitting device with which a driving voltage is able to be kept low is provided. The semiconductor light emitting device includes: an n-type cladding layer; an active layer; a p-type cladding layer containing AlGaInP; an intermediate layer; and a contact layer containing GaP in this order, wherein the intermediate layer contains Ga1-aInaP (0.357≦a≦0.408), and has a thickness of from 10 nm to 20 nm both inclusive.

摘要翻译： 提供了能够将驱动电压保持为低的半导体发光器件。 半导体发光器件包括：n型覆层; 活性层 含有AlGaInP的p型覆层; 中间层 和含有GaP的接触层，其中中间层含有Ga1-aInaP（0.357＆nlE; a＆nlE; 0.408），并且其厚度为10nm至20nm。

公开(公告)号：US08320421B2

公开(公告)日：2012-11-27

申请号：US12311916

申请日：2008-05-20

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L33/00

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/3432

摘要： A semiconductor light-emitting device configured to decrease a leakage current in a current-blocking layer and including a light-emitting portion composed of a first compound semiconductor layer having a first conductivity type, an active layer, and a second layer having a second conductivity type, and a current-blocking layer in contact with the side of the light-emitting portion and composed of a third layer having the first conductivity type and a fourth layer having the second conductivity type.

摘要翻译： 一种半导体发光器件，被配置为减小电流阻挡层中的漏电流，并且包括由具有第一导电类型的第一化合物半导体层，具有第二导电性的有源层和第二层构成的发光部 以及与发光部分侧接触并由具有第一导电类型的第三层和具有第二导电类型的第四层构成的电流阻挡层。

公开(公告)号：US20090072266A1

公开(公告)日：2009-03-19

申请号：US12208855

申请日：2008-09-11

申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

IPC分类号： H01L29/24

CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

摘要翻译： 本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成， 掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与 第三化合物半导体层中的杂质的取代位置。