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    SEMICONDUCTOR LIGHT-EMITTING DEVICE
    2.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20100019255A1

    公开(公告)日：2010-01-28

    申请号：US12311916

    申请日：2008-05-20

    申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    IPC分类号： H01L33/00

    CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/145 ,  H01S5/2201 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3072 ,  H01S5/3077 ,  H01S5/3211 ,  H01S5/3432

    摘要： There is provided a semiconductor light-emitting device capable of an attempt to further decrease a leakage current in a current-blocking layer and including (A) a light-emitting portion (20) composed of a first compound semiconductor layer (abbreviated as a layer hereinafter) (21) having a first conductivity type, an active layer (23), and a second layer (22) having a second conductivity type, and (B) a current-blocking layer (40) in contact with the side of the light-emitting portion and composed of a third layer (43) having the first conductivity type and a fourth layer (44) having the second conductivity type, wherein the impurity for imparting the first conductivity type to the first layer (21) includes an impurity in the first layer (21) at a substitution site which is uncompetitive with a substitution site of the impurity in the second layer (22), for imparting the second conductivity type to the second layer (22), and the impurity for imparting the first conductivity type to the third layer (43) includes an impurity in the third layer (43) at a substitution site which is competitive with a substitution site of the impurity in the fourth layer (44), for imparting the second conductivity type to the fourth layer (44).

    摘要翻译： 提供一种半导体发光器件，其能够进一步减小电流阻挡层中的漏电流，并且包括（A）由第一化合物半导体层（简称为层）构成的发光部（20） （21），具有第一导电类型的有源层（23）和具有第二导电类型的第二层（22），和（B）与所述第二导电类型的侧面接触的电流阻挡层（40） 发光部分，并且由具有第一导电类型的第三层（43）和具有第二导电类型的第四层（44）组成，其中用于赋予第一层（21）的第一导电类型的杂质包括杂质 在与第二层（22）中的杂质的取代部位不具竞争力的取代位置处的第一层（21）中，用于将第二导电类型赋予第二层（22），并且用于赋予第一层 导电类型到th 第三层（43）在与第四层（44）中的杂质的取代位置竞争的取代位置处包含在第三层（43）中的杂质，用于将第二导电类型赋予第四层（44） ）。

    Semiconductor light emitting device
    4.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号：US07915625B2

    公开(公告)日：2011-03-29

    申请号：US12208855

    申请日：2008-09-11

    申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    IPC分类号： H01L33/00

    CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

    摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成， 掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与 第三化合物半导体层中的杂质的取代位置。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号：US20090072266A1

    公开(公告)日：2009-03-19

    申请号：US12208855

    申请日：2008-09-11

    申请人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    发明人： Sachio Karino ,  Eiji Takase ,  Makoto Oogane ,  Tsuyoshi Nagatake ,  Michiru Kamada ,  Hironobu Narui ,  Nobukata Okano

    IPC分类号： H01L29/24

    CPC分类号： H01S5/227 ,  B82Y20/00 ,  H01L33/16 ,  H01S5/1064 ,  H01S5/2201 ,  H01S5/221 ,  H01S5/2222 ,  H01S5/2223 ,  H01S5/2226 ,  H01S5/2275 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3432

    摘要： Disclosed herein is a semiconductor light emitting device including: a light emitting part formed of a multilayer structure arising from sequential stacking of a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; a current block layer; and a burying layer, wherein a planar shape of the active layer is a strip shape in which a width of a center part is smaller than a width of both end parts, the current block layer is composed of third and fourth compound semiconductor layers, the burying layer is formed of a multilayer structure arising from sequential stacking of a first burying layer and a second burying layer, and an impurity for causing the second burying layer is such that a substitution site of the impurity in the second burying layer does not compete with a substitution site of an impurity in the third compound semiconductor layer.

    摘要翻译： 本发明公开了一种半导体发光器件，其包括：发光部，其由通过第一化合物半导体层，有源层和第二化合物半导体层的顺序堆叠而产生的多层结构形成; 当前阻挡层; 以及埋入层，其中有源层的平面形状是中心部分的宽度小于两端部宽度的带状，电流阻挡层由第三和第四化合物半导体层构成， 掩埋层由第一埋层和第二掩埋层的顺序堆叠产生的多层结构形成，并且用于引起第二掩埋层的杂质使得第二掩埋层中的杂质的取代位置不与 第三化合物半导体层中的杂质的取代位置。