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公开(公告)号：US5812350A
公开(公告)日：1998-09-22
申请号：US729081
申请日：1996-10-09
CPC分类号： G11B5/3967 , G11B5/127 , G11B5/147 , G11B5/3109 , G11B5/3113 , G11B5/3146 , G11B5/3153 , G11B5/1878
摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.
摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。
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公开(公告)号：US5652687A
公开(公告)日：1997-07-29
申请号：US531530
申请日：1995-09-21
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译： 薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。 凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。
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公开(公告)号：US5864450A
公开(公告)日：1999-01-26
申请号：US99537
申请日：1998-06-18
CPC分类号： G11B5/3967 , G11B5/127 , G11B5/147 , G11B5/3109 , G11B5/3113 , G11B5/39
摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.
摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。
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4.发明授权Method of making a planarized thin film magnetic write head with submicron trackwidth 失效制造具有亚微米轨道宽度的平面化薄膜磁写头的方法
公开(公告)号：US5802700A
公开(公告)日：1998-09-08
申请号：US469728
申请日：1995-06-06
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method is provided for making a thin film magnetic write head with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译： 提供了一种用于制造具有位于两个极层之一的顶部上的凹口结构的薄膜磁性写入头的方法。 凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。
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公开(公告)号：US08673654B2
公开(公告)日：2014-03-18
申请号：US12589465
申请日：2009-10-23
申请人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
发明人： Liubo Hong , Cheng Horng , Mao-Min Chen , Ru-Yin Tong
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/09 , G01R33/093 , G01R33/098 , G11B5/3906 , G11B5/3909 , G11C11/161 , G11C11/1673 , H01F10/30 , H01F10/3254 , H01F10/3259 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , Y10T428/1114
摘要： An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the α-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the α-TaN layer. An α-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an α-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.
摘要翻译： 公开了一种MRAM结构，其中底部电极具有无定形TaN覆盖层，以一致地提供在覆盖的MTJ中的AFM，固定，隧道势垒和自由层的平滑且致密的生长。 与传统的Ta覆盖层不同，TaN是抗氧化的并且具有高电阻率以避免由于覆盖层在隧道势垒层的侧壁上的再沉积引起的感测电流的分流。 或者，α-TaN层是MTJ中的种子层。 此外，种子层可以是由α-TaN层上的NiCr，NiFe或NiFeCr层构成的复合层。 也可以在TMR读取头中使用α-TaN覆盖层或种子层。 在α-TaN覆盖层上形成的MTJ具有高MR比，高Vb和RA，其类似于基于优化的Ta覆盖层的MTJ获得的结果。
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公开(公告)号：US07880249B2
公开(公告)日：2011-02-01
申请号：US11290763
申请日：2005-11-30
申请人： Jun Yuan , Liubo Hong , Mao-Min Chen
发明人： Jun Yuan , Liubo Hong , Mao-Min Chen
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： Methods are presented for fabricating an MTJ element having a precisely controlled spacing between its free layer and a bit line and, in addition, having a protective spacer layer formed abutting the lateral sides of the MTJ element to eliminate leakage currents between MTJ layers and the bit line. Each method forms a dielectric spacer layer on the lateral sides of the MTJ element and, depending on the method, includes an additional layer that protects the spacer layer during etching processes used to form a Cu damascene bit line. At various stages in the process, a dielectric layer is also formed to act as a CMP stop layer so that the capping layer on the MTJ element is not thinned by the CMP process that planarizes the surrounding insulation. Subsequent to planarization, the stop layer is removed by an anisotropic etch of such precision that the MTJ element capping layer is not thinned and serves to maintain an exact spacing between the bit line and the MTJ free layer.
摘要翻译： 提出了用于制造在其自由层和位线之间具有精确控制的间隔的MTJ元件的方法，此外，具有邻接MTJ元件的侧面形成的保护性间隔层以消除MTJ层与钻头之间的泄漏电流 线。 每种方法在MTJ元件的侧面上形成电介质间隔层，并且根据该方法，包括在用于形成Cu镶嵌位线的蚀刻工艺期间保护间隔层的附加层。 在该过程的各个阶段，还形成介电层以用作CMP停止层，使得MTJ元件上的覆盖层不会通过使周围绝缘平坦化的CMP工艺变薄。 在平坦化之后，通过各向异性蚀刻去除停止层，其精度使得MTJ元件覆盖层不变薄并且用于保持位线和MTJ自由层之间的精确间隔。
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公开(公告)号：US07268975B2
公开(公告)日：2007-09-11
申请号：US11042487
申请日：2005-01-25
申请人： Cherng Chyi Han , Mao-Min Chen , Pokang Wang , Yimin Guo
发明人： Cherng Chyi Han , Mao-Min Chen , Pokang Wang , Yimin Guo
CPC分类号： G11B5/3163 , G11B5/17 , G11B5/3116 , G11B5/3123 , G11B5/313 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： One of the major requirements for higher frequency extendability is to reduce yoke length and inductance in order to have fast saturation. This has been accomplished by using a design that provides a cavity in the lower pole piece inside which is located at least two coils, one on top of the other. A process for manufacturing the device is also described.
摘要翻译： 更高频率可扩展性的主要要求之一是减少磁轭长度和电感以获得快速饱和。 这已经通过使用在下极片中提供空腔的设计来实现，其中位于至少两个线圈之间，一个在另一个之上。 还描述了用于制造该装置的方法。
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公开(公告)号：US07251102B2
公开(公告)日：2007-07-31
申请号：US10782496
申请日：2004-02-19
申请人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
发明人： Cherng-Chyi Han , Mao-Min Chen , Laurie Lauchlan , Lei Zhang
IPC分类号： G11B5/127
CPC分类号： G11B5/33 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/4906 , Y10T29/49062 , Y10T29/49064
摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.
摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。
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公开(公告)号：US07196876B2
公开(公告)日：2007-03-27
申请号：US10236359
申请日：2002-09-06
申请人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
发明人： Cherng-Chyi Han , Mao-Min Chen , Pokang Wang
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , Y10T29/49044 , Y10T29/49052
摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.
摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。
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公开(公告)号：US07126789B2
公开(公告)日：2006-10-24
申请号：US10633133
申请日：2003-08-01
申请人： Cherng Chyi Han , Mao-Min Chen
发明人： Cherng Chyi Han , Mao-Min Chen
IPC分类号： G11B5/147
CPC分类号： G11B5/3103 , Y10T29/49032
摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a planar magnetic write head is described.
摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一旦线圈暴露，CMP就终止，允许其保持其全部厚度并且导致最小的直流电阻。 描述了该方法在平面磁写头的制造中的应用。
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