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    Single stripe magnetoresistive (MR) head
    3.
    发明授权
    Single stripe magnetoresistive (MR) head 失效
    单条磁阻（MR）头

    公开(公告)号：US06373667B1

    公开(公告)日：2002-04-16

    申请号：US09637208

    申请日：2000-08-14

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Cheng Tzong Horng ,  Po-Kang Wang ,  Chyu Jiuh Torng ,  Kochan Ju ,  Yimin Guo

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49048

    摘要： A method for fabricating a soft adjacent layer (SAL) magnetoresistive (MR) sensor element and several soft adjacent layer (SAL) magnetoresistive (MR) sensor elements which may be fabricated employing the method. There is first provided a substrate. There is formed over the substrate a dielectric layer, where the dielectric layer has a first surface of the dielectric layer and a second surface of the dielectric layer opposite the first surface of the dielectric layer. There is also formed over the substrate a magnetoresistive (MR) layer contacting the first surface of the dielectric layer. There is also formed over the substrate a soft adjacent layer (SAL), where the soft adjacent layer (SAL) has a first surface of the soft adjacent layer (SAL) and a second surface of the soft adjacent layer (SAL). The first surface of the soft adjacent layer (SAL) contacts the second surface of the dielectric layer. Finally, there is also formed over the substrate a transverse magnetic biasing layer, where the transverse magnetic biasing layer contacts the second surface of the soft adjacent layer (SAL), and where at least one of the dielectric layer, the magnetoresistive (MR) layer, the soft adjacent layer (SAL) and the transverse magnetic biasing layer is a patterned layer formed employing an etch mask which serves as a lift-off stencil for forming a patterned second dielectric layer adjoining an edge of the patterned layer. The invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element formed with the magnetoresistive (MR) layer interposed between the substrate and the soft adjacent layer (SAL). Similarly, the invention also contemplates a soft adjacent layer (SAL) magnetoresistive (MR) sensor element employing a transverse magnetic biasing layer formed of a hard bias permanent magnet material.

    摘要翻译： 一种用于制造软相邻层（SAL）磁阻（MR）传感器元件和若干软相邻层（SAL）磁阻（MR））传感器元件的方法，其可以使用该方法制造。 首先提供基板。 在衬底上形成介电层，其中电介质层具有电介质层的第一表面和电介质层与电介质层的第一表面相对的第二表面。 还在衬底上形成与电介质层的第一表面接触的磁阻（MR）层。 还在衬底上形成软相邻层（SAL），其中软相邻层（SAL）具有软相邻层（SAL）的第一表面和软相邻层（SAL）的第二表面。 软相邻层（SAL）的第一表面接触电介质层的第二表面。 最后，还在衬底上形成横向磁偏置层，横向磁偏置层接触软相邻层（SAL）的第二表面，并且其中介电层，磁阻（MR）层中的至少一个 ，软相邻层（SAL）和横向磁偏置层是使用蚀刻掩模形成的图案层，其用作用于形成与图案化层的边缘相邻的图案化的第二介电层的剥离模板。 本发明还考虑了由介于基板和软相邻层（SAL）之间的磁阻（MR）层形成的软相邻层（SAL）磁阻（MR）传感器元件。 类似地，本发明还考虑使用由硬偏磁永磁材料形成的横向磁偏置层的软相邻层（SAL）磁阻（MR）传感器元件。

    High track density dual stripe magnetoresistive (DSMR) head
    5.
    发明授权
    High track density dual stripe magnetoresistive (DSMR) head 失效
    高轨道密度双条磁阻（DSMR）头

    公开(公告)号：US5684658A

    公开(公告)日：1997-11-04

    申请号：US727264

    申请日：1996-10-07

    申请人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

    发明人： Xizeng Shi ,  Yimin Guo ,  Kochan Ju ,  Cherng-Chyi Han ,  Yimin Hsu ,  Jei-Wei Chang

    IPC分类号： G11B5/012 ,  G11B5/39 ,  G11B5/48

    CPC分类号： G11B5/3954 ,  G11B5/012 ,  G11B5/3967 ,  G11B5/488

    摘要： A method for forming a dual stripe magnetoresistive (DSMR) sensor element, and the dual stripe magnetoresistive (DSMR) sensor element formed through the method. To practice the method, there is formed upon a substrate a first magnetoresistive (MR) layer, where the first magnetoresistive (MR) layer has a first sensor region longitudinally magnetically biased in a first longitudinal bias direction through a patterned first longitudinal magnetic biasing layer. There is then formed a second magnetoresistive (MR) layer parallel with and separated from the first magnetoresistive (MR) layer by an insulator layer. The second magnetoresistive (MR) layer has a second sensor region longitudinally magnetically biased in a second longitudinal bias direction through a patterned second longitudinal magnetic biasing layer. The first longitudinal bias direction and the second longitudinal bias direction are substantially parallel. In addition, the first sensor region and the second sensor region are physically offset. Finally, the first magnetoresistive (MR) layer is electromagnetically biased with a first bias current in a first bias current direction and the second magnetoresistive (MR) layer is electromagnetically biased with a second bias current in a second bias current direction, where the first bias current direction and the second bias current direction are substantially parallel.

    摘要翻译： 一种用于形成双条磁阻（DSMR）传感器元件的方法和通过该方法形成的双条带磁阻（DSMR）传感器元件。 为了实施该方法，在衬底上形成第一磁阻（MR）层，其中第一磁阻（MR）层具有通过图案化的第一纵向磁偏置层在第一纵向偏置方向上纵向磁偏置的第一传感器区。 然后通过绝缘体层形成与第一磁阻（MR）层平行并与第一磁阻（MR）层分离的第二磁阻（MR）层。 第二磁阻（MR）层具有通过图案化的第二纵向磁偏置层在第二纵向偏置方向上纵向磁偏置的第二传感器区。 第一纵向偏置方向和第二纵向偏置方向基本平行。 此外，第一传感器区域和第二传感器区域被物理偏移。 最后，第一磁阻（MR）层在第一偏置电流方向上以第一偏置电流进行电磁偏置，第二磁阻（MR）层在第二偏置电流方向上以第二偏置电流进行电磁偏置，其中第一偏置 电流方向和第二偏置电流方向基本上平行。

    Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
    6.
    发明授权
    Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
    垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法

    公开(公告)号：US06230390B1

    公开(公告)日：2001-05-15

    申请号：US09182761

    申请日：1998-10-30

    申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

    发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

    IPC分类号： G11B5127

    CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

    摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对的第一对横向磁偏压图案化的偏磁层基本上消磁时， 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

    Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof
    7.
    发明授权
    Canted longitudinal patterned exchange biased dual-stripe magnetoresistive (DSMR) sensor element and method for fabrication thereof 失效
    垂直图案交换偏置双条磁阻（DSMR）传感器元件及其制造方法

    公开(公告)号：US06449131B2

    公开(公告)日：2002-09-10

    申请号：US09818963

    申请日：2001-03-28

    申请人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

    发明人： Yimin Guo ,  Kochan Ju ,  Po-Kang Wang ,  Cherng-Chyi Han ,  Hui-Chuan Wang

    IPC分类号： G11B539

    CPC分类号： G11B5/3954 ,  G11B5/3932 ,  H04R15/00 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A dual stripe magnetoresistive (DSMR) sensor element, and a method for fabricating the dual stripe magnetoresistive (DSMR) sensor element. When fabricating the dual stripe magnetoresistive (DSMR) sensor element while employing the method, there are employed two pair of patterned magnetic biasing layers formed of a single magnetic biasing material. The two pair of patterned magnetic biasing layers bias a pair of patterned magnetoresistive (MR) layers in a pair of opposite canted directions. The method employs multiple thermal annealing methods one of which employs a thermal annealing temperature, a thermal annealing exposure time and an extrinsic magnetic bias field such that a first pair of transversely magnetically biased patterned magnetic biasing layers is not substantially demagnetized when forming a second pair of transversely magnetically biased patterned magnetic biasing layers of anti-parallel transverse magnetic bias direction to the first pair of transversely magnetically biased patterned magnetic biasing layers.

    摘要翻译： 双条带磁阻（DSMR）传感器元件，以及制造双条磁阻（DSMR）传感元件的方法。 当采用该方法制造双重磁阻（DSMR）传感器元件时，使用由单个磁偏置材料形成的两对图案化的磁偏置层。 两对图案化的磁偏置层在一对相反的倾斜方向上偏置一对图案化磁阻（MR）层。 该方法采用多种热退火方法，其中之一采用热退火温度，热退火暴露时间和非本征磁偏置场，使得当形成第二对的第一对成对的第一对横向磁偏压图案化磁偏置层时，基本上不消磁 向第一对横向磁偏置图案化磁偏置层的横向磁偏置图案化的反平行横向偏磁方向的偏置偏压层。

    Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer
    8.
    发明授权
    Photoresist frame plated magnetic transducer pole layer employing high magnetic permeability seed layer 失效
    光电阻框架电磁换能器极层采用高磁导率种子层

    公开(公告)号：US5843521A

    公开(公告)日：1998-12-01

    申请号：US897796

    申请日：1997-07-21

    申请人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

    发明人： Kochan Ju ,  Mao-Min Chen ,  Yimin Guo

    IPC分类号： G11B5/31 ,  G11B5/39 ,  B05D5/12

    CPC分类号： G11B5/3967 ,  G11B5/3103 ,  G11B5/3113 ,  G11B5/3146 ,  G11B5/3163 ,  Y10T428/1186 ,  Y10T428/265 ,  Y10T428/31678

    摘要： A method for forming a magnetic transducer, and a magnetic transducer formed through the method. There is first provided a substrate. There is then formed over the substrate a first magnetic pole layer. There is then formed upon the first magnetic pole layer a gap filling dielectric layer. There is then formed upon the gap filling dielectric layer a seed layer. There is then formed upon the seed layer a photoresist frame employed in a photoresist frame plating method for forming a plated second magnetic pole layer upon the seed layer, where a base of a sidewall of the photoresist frame has a taper which provides a notch within an edge of the plated second magnetic pole layer at its interface with the seed layer. There is then plated through the photoresist frame plating method the plated second magnetic pole layer upon the seed layer, where the seed layer is formed of a thickness and of a material which compensates when electromagnetically energizing the magnetic transducer for a magnetic write field gradient boundary decompression between the first magnetic pole layer and the plated second magnetic pole layer due to the notch within the plated second magnetic pole layer. The method for forming the magnetic transducer contemplates the magnetic transducer formed through the method.

    摘要翻译： 一种用于形成磁换能器的方法，以及通过该方法形成的磁换能器。 首先提供基板。 然后在衬底上形成第一磁极层。 然后在第一磁极层上形成间隙填充介电层。 然后在填充介电层的间隙上形成种子层。 然后在种子层上形成光致抗蚀剂框架，该抗蚀剂框架用于在种子层上形成镀覆的第二磁极层的光致抗蚀剂框架镀覆方法，其中光致抗蚀剂框架的侧壁的基部具有锥形，其在 电镀第二磁极层的边缘与其种子层的界面处。 然后通过光致抗蚀剂框架电镀方法将电镀的第二磁极层电镀在种子层上，其中籽晶层由厚度形成，并且当材料在磁写入场梯度边界解压缩时对磁换能器进行电磁激励时补偿 由于镀覆的第二磁极层内的凹口，在第一磁极层和镀覆的第二磁极层之间。 用于形成磁换能器的方法考虑了通过该方法形成的磁换能器。

    Magnetic random access memory array with coupled soft adjacent magnetic layer
    9.
    发明授权
    Magnetic random access memory array with coupled soft adjacent magnetic layer 失效
    具有耦合的软相邻磁性层的磁性随机存取存储器阵列

    公开(公告)号：US07335961B2

    公开(公告)日：2008-02-26

    申请号：US11210637

    申请日：2005-08-25

    申请人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

    发明人： Yimin Guo ,  Tai Min ,  Pokang Wang ,  Xi Zeng Shi

    IPC分类号： H01L29/82

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1675

    摘要： An MTJ element is formed between orthogonal word and bit lines. The bit line is a composite line which includes a high conductivity layer and a soft magnetic layer under the high conductivity layer. During operation, the soft magnetic layer concentrates the magnetic field of the current and, due to its proximity to the free layer, it magnetically couples with the free layer in the MTJ. This coupling provides thermal stability to the free layer magnetization and ease of switching and the coupling may be further enhanced by inducing a shape or crystalline anisotropy into the free layer during formation.

    摘要翻译： 在正交字和位线之间形成MTJ元素。 位线是在高导电率层下包括高导电性层和软磁性层的复合线。 在操作期间，软磁性层集中了电流的磁场，并且由于其接近于自由层，它与MTJ中的自由层磁耦合。 该耦合为自由层磁化提供了热稳定性，并且易于切换，并且可以通过在形成期间通过在自由层中引起形状或晶体各向异性而进一步增强耦合。

    Magnetically stable spin-valve sensor
    10.
    发明授权
    Magnetically stable spin-valve sensor 失效
    磁稳定自旋阀传感器

    公开(公告)号：US06324037B1

    公开(公告)日：2001-11-27

    申请号：US09359895

    申请日：1999-07-26

    申请人： Li-Yan Zhu ,  Yimin Guo ,  Mao-Min Chen

    发明人： Li-Yan Zhu ,  Yimin Guo ,  Mao-Min Chen

    IPC分类号： G11B5127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A laminated spin-valve sensor comprises a fixed magnetic layer and a free-layer separated by a thin spacer layer, with electrical leads interconnected to ends of the sensor. The sensor is longitudinally biased by permanently magnetized structures between the electrical leads and the sensor ends. Each electrical lead interconnects to a sensor end through a permanently magnetized structures which are permanent magnets or exchange-coupled thin films. Exchange-coupled films are canted in a direction consistent with a desired direction of fixed-layer magnetization. Each layer of the sensor has an easy axis aligned with a respective desired direction of magnetization. The transverse bias of the fixed-layer is provided by the bias current and enhanced by a transverse high uniaxial anisotropy, with a selected material with proper magnetostriction. The permanently magnetized structure incorporates a seed-layer and a capping layer for improving the magnetic property.

    摘要翻译： 层压自旋阀传感器包括固定磁性层和由薄间隔层隔开的自由层，电导线与传感器的端部相互连接。 传感器通过电引线和传感器端之间的永久磁化结构纵向偏置。 每个电引线通过永久磁化的结构（其是永磁体或交换耦合薄膜）连接到传感器端。 交换耦合膜沿与固定层磁化的所需方向一致的方向倾斜。 传感器的每个层具有与各自期望的磁化方向对准的容易的轴。 固定层的横向偏置由偏置电流提供，并通过横向高单轴各向异性增强，所选择的材料具有适当的磁致伸缩。 永久磁化的结构包含用于改善磁性的种子层和覆盖层。