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公开(公告)号：US5652687A
公开(公告)日：1997-07-29
申请号：US531530
申请日：1995-09-21
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译： 薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。 凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。
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2.发明授权Method of making a planarized thin film magnetic write head with submicron trackwidth 失效制造具有亚微米轨道宽度的平面化薄膜磁写头的方法
公开(公告)号：US5802700A
公开(公告)日：1998-09-08
申请号：US469728
申请日：1995-06-06
CPC分类号： G11B5/3103 , G11B5/3116 , G11B5/3133 , G11B5/3146 , G11B5/1872 , G11B5/232 , G11B5/235 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method is provided for making a thin film magnetic write head with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.
摘要翻译： 提供了一种用于制造具有位于两个极层之一的顶部上的凹口结构的薄膜磁性写入头的方法。 凹口结构是大致U形的薄膜层，其在U形内部形成沟槽，用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的，这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。
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3.发明授权Tantalum adhesion layer and reactive-ion-etch process for providing a thin film metallization area 失效钽粘附层和用于提供薄膜金属化区域的反应离子蚀刻工艺
公开(公告)号：US5885750A
公开(公告)日：1999-03-23
申请号：US942777
申请日：1997-10-02
IPC分类号： G03F7/085 , H01L21/70 , H01L21/768 , G03F7/26
CPC分类号： G03F7/085 , H01L21/707 , H01L21/76885
摘要： A method for providing a thin film metallization area on a substrate is disclosed comprising the steps of: depositing a Ta adhesion layer on the surface of the substrate seed layer, conducting a photo resist process on the Ta adhesion layer to define the thin film metallization area, including a remnant removal process to remove remnant photo resist process material in the thin film metallization area to the Ta adhesion layer, the Ta adhesion layer preventing the remnant removal from reaching the seed layer, conducting a Ta removal reactive-ion-etch process to remove the Ta adhesion layer in the thin film metallization area, so that the seed layer is exposed in the metallization area. A metal material may then be deposited in the metallization area.
摘要翻译： 公开了一种在衬底上提供薄膜金属化区域的方法，包括以下步骤：在衬底晶种层的表面上沉积Ta粘附层，在Ta粘附层上进行光刻工艺以限定薄膜金属化区域 ，包括残留的去除工艺，以将薄膜金属化区域中残留的光致抗蚀剂处理材料去除到Ta粘附层，Ta粘附层防止残留物去除种子层，进行Ta去除反应离子蚀刻工艺 去除薄膜金属化区域中的Ta粘附层，使得种子层在金属化区域中暴露。 然后可以在金属化区域中沉积金属材料。
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公开(公告)号：US06687083B2
公开(公告)日：2004-02-03
申请号：US09935361
申请日：2001-08-22
申请人： Wenchein Hsiao , Edward Hin Pong Lee , Neil Leslie Robertson , Hugo Alberto Emilio Santini , Joseph Francis Smyth , Samuel Wei-san Yuan
发明人： Wenchein Hsiao , Edward Hin Pong Lee , Neil Leslie Robertson , Hugo Alberto Emilio Santini , Joseph Francis Smyth , Samuel Wei-san Yuan
IPC分类号： G11B5147
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/313 , G11B5/3136 , G11B5/3163
摘要： An low profile inductive write head is provided to improve track definition and head efficiency and to reduce overcoat and pole tip protrusion and cracking caused by thermal expansion. A first insulation layer of an insulation stack enclosing the coil layer is formed of an non-magnetic inorganic insulator material such as aluminum oxide, silicon dioxide or titanium dioxide having a thickness of in the range of 0.2-0.3 microns. The thinner first insulation layer results in a significantly reduced slope of the insulation stack which decreases reflective notching during processing of the second pole tip to improve track definition. Improved thermal conduction properties of the inorganic insulator material improves heat sinking of the write coil reducing overcoat and pole tip protrusion and cracking at the pole tip/write gap layer interface.
摘要翻译： 提供了一种低调的感应写头，以提高轨道清晰度和头部效率，并减少由热膨胀引起的外涂层和极尖突起和开裂。 封闭线圈层的绝缘堆叠的第一绝缘层由厚度为0.2-0.3微米的非磁性无机绝缘体材料例如氧化铝，二氧化硅或二氧化钛形成。 较薄的第一绝缘层导致绝缘堆叠的显着减小的斜率，这降低了在第二极尖的处理期间的反射缝合，以改善轨道定义。 无机绝缘体材料的改进的导热性能改善了写入线圈的散热，从而减小了极尖/写入间隙层界面处的外涂层和极尖突起以及开裂。
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5.发明授权Method for making a thin film inductive write head having a pedestal pole tip and an electroplated gap 失效用于制造具有基座极端和电镀间隙的薄膜感应写头的方法
公开(公告)号：US5901432A
公开(公告)日：1999-05-11
申请号：US997957
申请日：1997-12-24
申请人： Michael Armstrong , David Heim , Richard Hsiao , Neil Leslie Robertson , Hugo Alberto Emilio Santini
发明人： Michael Armstrong , David Heim , Richard Hsiao , Neil Leslie Robertson , Hugo Alberto Emilio Santini
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , Y10T29/49044 , Y10T29/49046 , Y10T29/49052
摘要： A method for making a merged thin film read/write head, where the first pole piece includes a pedestal or pole tip portion that extends up from the first pole piece layer, uses electroplating to form the gap so that the gap layer does not have to be removed later. After the first pole piece is deposited, the coil insulation structure is built over the first pole piece. Afterwards an electrically conductive seed layer of the same ferromagnetic material as the first pole piece is formed over the wafer to provide an electrically conductive path for subsequent electroplating. After the seed layer deposition, a photoresist pattern is then formed to define the shape of the second pole piece. Nonmagnetic nickel-phosphorous is then electroplated onto the seed layer in the region not covered by the photoresist pattern to form the gap layer. The second ferromagnetic layer is then electroplated onto the gap layer to define the shape of the second pole piece. The thickness of the second pole piece layer is deliberately made thicker than the desired final thickness because the second pole piece layer is used as a mask for subsequent ion beam milling to form the notched pole tip element of the first pole piece. The photoresist is removed and ion beam milling performed to remove the seed layer and a portion of the first pole piece layer to define the pedestal pole tip element of the first pole piece. The ion beam milling does not have to remove the gap layer because the electroplated gap has been defined by the photoresist pattern to have the desired trackwidth.
摘要翻译： 一种制造合并薄膜读/写头的方法，其中第一极片包括从第一极片层向上延伸的基座或极尖部分，使用电镀形成间隙，使得间隙层不必 稍后删除 在第一极片沉积之后，线圈绝缘结构被构建在第一极片上。 之后，在晶片上形成与第一极片相同的铁磁材料的导电种子层，以提供用于随后电镀的导电路径。 在种子层沉积之后，然后形成光刻胶图案以限定第二极片的形状。 然后将非磁性镍磷电镀在未被光致抗蚀剂图案覆盖的区域中的种子层上以形成间隙层。 然后将第二铁磁层电镀到间隙层上以限定第二极靴的形状。 由于第二极片层用作后续离子束铣削的掩模以形成第一极靴的切口极端部元件，所以第二极靴层的厚度被故意地制造得比期望的最终厚度更厚。 去除光致抗蚀剂，进行离子束研磨以除去种子层和第一极片层的一部分，以限定第一极片的基座极端部元件。 离子束铣削不必去除间隙层，因为电镀间隙已由光致抗蚀剂图案限定以具有期望的轨道宽度。
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公开(公告)号：US5665251A
公开(公告)日：1997-09-09
申请号：US344241
申请日：1994-11-23
IPC分类号： G11B5/31 , G11B5/39 , H01L21/768 , B44C1/22
CPC分类号： G11B5/3967 , G11B5/3116 , G11B5/3163 , H01L21/76885
摘要： A method is provided for constructing well defined plated miniature metallic structures. A seedlayer may be formed over an insulative layer such as a gap layer of a write head. A protective layer, such as alumina or silicon dioxide, is formed on top of the seedlayer to protect it from a subsequent reactive ion etching (RIE) step. A relatively thick layer of material, such as polymeric photoresist, is formed on top of the protective layer, the thick layer being of a type of material which can be patterned by reactive ion etching. By photolithography, an RIE mask, such as a thin layer of patterned metal, is formed on top of the relatively thick resist layer. The pattern of the mask corresponds to the desired shape of the metallic structure to be formed by plating. After masking the relatively thick layer the relatively thick layer is anisotropically etched by RIE. After the thick layer is RIE'd the protective layer on top of the seedlayer portion to be plated is removed by an etchant such as an aqueous alkaline etchant containing EDTA. It is important that the polymeric photoresist not be attacked by this etchant since it would undercut the high definition required for the metallic structure. After the protective layer portion is removed electrodeposition takes place to plate the desired metallic structure on the seedlayer portion. After plating the remaining relatively thick layer can be removed by reactive ion etching and the remaining protective layer can be removed by the aforementioned etchant containing EDTA to leave the desired freestanding metallic structure with miniature high resolution features.
摘要翻译： 提供了一种用于构造良好定义的电镀微型金属结构的方法。 可以在诸如写入头的间隙层的绝缘层上形成种子层。 在种子层的顶部上形成保护层，例如氧化铝或二氧化硅，以保护其免于随后的反应离子蚀刻（RIE）步骤。 在保护层的顶部上形成相对厚的材料层，例如聚合物光致抗蚀剂，厚层是可以通过反应离子蚀刻图案化的材料类型。 通过光刻法，在相对较厚的抗蚀剂层的顶部上形成诸如图案化金属的薄层的RIE掩模。 掩模的图案对应于通过电镀形成的金属结构的期望形状。 在掩蔽相对较厚的层之后，通过RIE各向异性蚀刻相对较厚的层。 在厚层被RIE'之后，待镀覆的种子层部分顶部的保护层通过诸如含有EDTA的含水碱性蚀刻剂的蚀刻剂除去。 重要的是，聚合物光致抗蚀剂不会被该蚀刻剂侵蚀，因为它会削弱金属结构所需的高清晰度。 在去除保护层部分之后，进行电沉积以在籽晶层部分上铺板所需的金属结构。 电镀后，可以通过反应离子蚀刻除去剩余的相对较厚的层，并且可以通过上述含有EDTA的蚀刻剂除去剩余的保护层，以留下具有微小高分辨率特征的所需独立金属结构。
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公开(公告)号：US5864450A
公开(公告)日：1999-01-26
申请号：US99537
申请日：1998-06-18
CPC分类号： G11B5/3967 , G11B5/127 , G11B5/147 , G11B5/3109 , G11B5/3113 , G11B5/39
摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.
摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。
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公开(公告)号：US5812350A
公开(公告)日：1998-09-22
申请号：US729081
申请日：1996-10-09
CPC分类号： G11B5/3967 , G11B5/127 , G11B5/147 , G11B5/3109 , G11B5/3113 , G11B5/3146 , G11B5/3153 , G11B5/1878
摘要： The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.
摘要翻译： 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中，感应头或MR头的感应头部分的每个极片具有层的组合，每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金（Ni81Fe19）远离间隙。 由于两层由NiFe制成，所以可以使用这种类型的材料的所有理想特性，并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60％。 本发明避免了磁致伸缩的影响，尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比，层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时，磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能，那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。
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9.发明授权Thermally assisted recording head with near field transducer having integral heatsink 有权具有集成散热片的近场传感器的热辅助记录头公开(公告)号：US08339739B2
公开(公告)日：2012-12-25
申请号：US12807296
申请日：2010-08-31
IPC分类号： G11B5/187
CPC分类号： G11B5/314 , G11B5/3136 , G11B5/6088 , G11B2005/0021
摘要： A write head structure for use with thermally assisted recording is disclosed. Improved heat sinking is provided for removing thermal energy created by a ridge aperture near field light transducer. Metal films conduct heat away from the region near the ridge aperture to the high pressure air film at the ABS between the head and media. This heat is further dissipated by the media. The metal films have varying thickness to improve lateral conductivity and may be composed of Au combined with a harder metal such as Ru to improve wear characteristics at the ABS.
摘要翻译： 公开了一种用于热辅助记录的写头结构。 提供改进的散热用于去除由场光传感器附近的脊孔产生的热能。 金属膜将热量从脊孔附近的区域传导到头部和介质之间的ABS处的高压空气膜。 这种热量被介质进一步消散。 金属膜具有不同的厚度以改善横向导电性，并且可以由Au与诸如Ru的较硬金属组合以提高ABS的磨损特性。
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10.发明授权Thermally assisted recording head having recessed waveguide with near field transducer and methods of making same 有权带有近场传感器的凹槽波导的热辅助记录头及其制造方法公开(公告)号：US08169881B2
公开(公告)日：2012-05-01
申请号：US12347084
申请日：2008-12-31
申请人： Hamid Balamane , Thomas Dudley Boone, Jr. , Neil Leslie Robertson , Barry Cushing Stipe , Timothy Carl Strand
发明人： Hamid Balamane , Thomas Dudley Boone, Jr. , Neil Leslie Robertson , Barry Cushing Stipe , Timothy Carl Strand
IPC分类号： G11B7/135
CPC分类号： G11B5/3163 , G11B5/314 , G11B5/6088 , G11B2005/0021
摘要： According to one embodiment, an apparatus includes a near field transducer comprising a conductive metal film having a main body and a ridge extending from the main body and an optical waveguide for illumination of the near field transducer, a light guiding core layer of the optical waveguide being spaced from the near field transducer by less than about 100 nanometers and greater than 0 nanometers. In another embodiment, a method includes forming a near field transducer structure and removing a portion of the near field transducer structure. The method also includes forming a cladding layer adjacent a remaining portion of the near field transducer structure, wherein a portion of the cladding layer extends along the remaining portion of the near field transducer structure and forming a core layer above the cladding layer. Other apparatuses and methods are also included in the invention.
摘要翻译： 根据一个实施例，一种装置包括近场换能器，其包括具有主体和从主体延伸的脊的导电金属膜和用于照射近场换能器的光波导，光波导的导光芯层 与近场传感器间隔小于约100纳米且大于0纳米。 在另一实施例中，一种方法包括形成近场换能器结构并去除近场换能器结构的一部分。 该方法还包括在近场换能器结构的剩余部分附近形成包覆层，其中包层的一部分沿着近场换能器结构的剩余部分延伸并在包层上方形成芯层。 本发明还包括其他装置和方法。
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