NI45FE55 metal-in-gap thin film magnetic head
    1.
    发明授权
    NI45FE55 metal-in-gap thin film magnetic head 失效
    NI45FE55金属间隙薄膜磁头

    公开(公告)号:US5864450A

    公开(公告)日:1999-01-26

    申请号:US99537

    申请日:1998-06-18

    摘要: The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

    摘要翻译: 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中,感应头或MR头的感应头部分的每个极片具有层的组合,每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金(Ni81Fe19)远离间隙。 由于两层由NiFe制成,所以可以使用这种类型的材料的所有理想特性,并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60%。 本发明避免了磁致伸缩的影响,尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比,层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时,磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能,那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

    Metal-in-gap thin film magnetic head employing Ni.sub.45 Fe.sub.55
    2.
    发明授权
    Metal-in-gap thin film magnetic head employing Ni.sub.45 Fe.sub.55 失效
    使用Ni45Fe55的金属间隙薄膜磁头

    公开(公告)号:US5812350A

    公开(公告)日:1998-09-22

    申请号:US729081

    申请日:1996-10-09

    摘要: The present invention provides a novel high magnetic moment material for the pole pieces as well as a metal-in-gap configuration for the pole tips of either an inductive magnetic head only or the inductive portion of a MR head. The novel material is Ni.sub.45 Fe.sub.55. In the MIG configuration each pole piece of the inductive head or the inductive head portion of a MR head has a combination of layers, each combination of layers including a first layer of high magnetic moment material Ni.sub.45 Fe.sub.55 adjacent to a transducing gap and a second layer of low magnetic moment material such as Permalloy (Ni.sub.81 Fe.sub.19) further away from the gap. Since both layers are made of NiFe all the desirable properties of this type of material can be employed as well as simplifying its construction with similar plating baths. The saturation of the first layers is 50 to 60 percent higher than the saturation of the second layers. The present invention avoids effects of magnetostriction in spite of the high magnetic moment of the first layers. By appropriately selecting the thickness ratio of the second layer with respect to the first layer the magnetostriction of the laminated structure can be reduced substantially to zero. When this thickness ratio is in the order of five to nine the magnetostriction is reduced to, or slightly below, zero. If the inductive head is employed for write functions only then the second pole tip or both pole tips can be constructed of the high moment Ni.sub.45 Fe.sub.55 material without any thickness ratio or MIG configuration constraints.

    摘要翻译: 本发明提供了一种用于极片的新型高磁矩材料以及仅用于感应磁头或MR磁头的感应部分的极尖的金属间隙配置。 新材料是Ni45Fe55。 在MIG配置中,感应头或MR头的感应头部分的每个极片具有层的组合,每层组合包括与换能间隙相邻的第一层高磁矩材料Ni45Fe55和第二层 低磁矩材料如坡莫合金(Ni81Fe19)远离间隙。 由于两层由NiFe制成,所以可以使用这种类型的材料的所有理想特性,并且可以使用类似的电镀浴来简化其构造。 第一层的饱和度比第二层的饱和度高50至60%。 本发明避免了磁致伸缩的影响,尽管第一层的磁矩高。 通过适当地选择第二层相对于第一层的厚度比,层压结构的磁致伸缩可以基本上减小到零。 当该厚度比为5至9的数量级时,磁致伸缩降低到或略低于零。 如果感应头仅用于写入功能,那么第二极尖或两个极尖可以由没有任何厚度比或MIG配置约束的高力矩Ni45Fe55材料构成。

    Planarized thin film magnetic write head with submicron trackwidth
    3.
    发明授权
    Planarized thin film magnetic write head with submicron trackwidth 失效
    具有亚微米轨道宽度的平面化薄膜磁写头

    公开(公告)号:US5652687A

    公开(公告)日:1997-07-29

    申请号:US531530

    申请日:1995-09-21

    摘要: A thin film magnetic write head is provided with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.

    摘要翻译: 薄膜磁性写头设置有位于两个极层之一的顶部上的凹口结构。 凹口结构是大致U形的薄膜层,其在U形内部形成沟槽,用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的,这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。

    Method of making a planarized thin film magnetic write head with
submicron trackwidth
    4.
    发明授权
    Method of making a planarized thin film magnetic write head with submicron trackwidth 失效
    制造具有亚微米轨道宽度的平面化薄膜磁写头的方法

    公开(公告)号:US5802700A

    公开(公告)日:1998-09-08

    申请号:US469728

    申请日:1995-06-06

    摘要: A method is provided for making a thin film magnetic write head with a notch structure located on top of one of two pole layers. The notch structure is a generally U-shaped thin film layer which forms a trench inside the U for the containment of one or more pole tip layers in the pole tip region of the head. The notch structure has front surfaces at the tips of the legs of the U which lie in a plane that forms a part of the air bearing surface. The thickness of the notch layer is substantially equal to the thickness or thicknesses of the one or more pole tip layers located in the trench. A method of manufacturing the write head includes forming a very thin photoresist layer for defining the notch structure. The notch structure is well-defined which in turn allows the one or more pole tip layers to be well-defined with a very narrow trackwidth in the trench.

    摘要翻译: 提供了一种用于制造具有位于两个极层之一的顶部上的凹口结构的薄膜磁性写入头的方法。 凹口结构是大致U形的薄膜层,其在U形内部形成沟槽,用于容纳头部的磁极尖端区域中的一个或多个极尖端层。 凹口结构在位于形成空气轴承表面的一部分的平面中的U形腿的顶端具有前表面。 切口层的厚度基本上等于位于沟槽中的一个或多个极尖端层的厚度或厚度。 一种制造写入头的方法包括形成非常薄的光致抗蚀剂层以限定凹口结构。 凹口结构是明确的,这又允许一个或多个极尖端层在沟槽中具有很窄的轨道宽度。

    Thermally assisted recording head with near field transducer having integral heatsink
    5.
    发明授权
    Thermally assisted recording head with near field transducer having integral heatsink 有权
    具有集成散热片的近场传感器的热辅助记录头

    公开(公告)号:US08339739B2

    公开(公告)日:2012-12-25

    申请号:US12807296

    申请日:2010-08-31

    IPC分类号: G11B5/187

    摘要: A write head structure for use with thermally assisted recording is disclosed. Improved heat sinking is provided for removing thermal energy created by a ridge aperture near field light transducer. Metal films conduct heat away from the region near the ridge aperture to the high pressure air film at the ABS between the head and media. This heat is further dissipated by the media. The metal films have varying thickness to improve lateral conductivity and may be composed of Au combined with a harder metal such as Ru to improve wear characteristics at the ABS.

    摘要翻译: 公开了一种用于热辅助记录的写头结构。 提供改进的散热用于去除由场光传感器附近的脊孔产生的热能。 金属膜将热量从脊孔附近的区域传导到头部和介质之间的ABS处的高压空气膜。 这种热量被介质进一步消散。 金属膜具有不同的厚度以改善横向导电性,并且可以由Au与诸如Ru的较硬金属组合以提高ABS的磨损特性。

    Thermally assisted recording head having recessed waveguide with near field transducer and methods of making same
    6.
    发明授权
    Thermally assisted recording head having recessed waveguide with near field transducer and methods of making same 有权
    带有近场传感器的凹槽波导的热辅助记录头及其制造方法

    公开(公告)号:US08169881B2

    公开(公告)日:2012-05-01

    申请号:US12347084

    申请日:2008-12-31

    IPC分类号: G11B7/135

    摘要: According to one embodiment, an apparatus includes a near field transducer comprising a conductive metal film having a main body and a ridge extending from the main body and an optical waveguide for illumination of the near field transducer, a light guiding core layer of the optical waveguide being spaced from the near field transducer by less than about 100 nanometers and greater than 0 nanometers. In another embodiment, a method includes forming a near field transducer structure and removing a portion of the near field transducer structure. The method also includes forming a cladding layer adjacent a remaining portion of the near field transducer structure, wherein a portion of the cladding layer extends along the remaining portion of the near field transducer structure and forming a core layer above the cladding layer. Other apparatuses and methods are also included in the invention.

    摘要翻译: 根据一个实施例,一种装置包括近场换能器,其包括具有主体和从主体延伸的脊的导电金属膜和用于照射近场换能器的光波导,光波导的导光芯层 与近场传感器间隔小于约100纳米且大于0纳米。 在另一实施例中,一种方法包括形成近场换能器结构并去除近场换能器结构的一部分。 该方法还包括在近场换能器结构的剩余部分附近形成包覆层,其中包层的一部分沿着近场换能器结构的剩余部分延伸并在包层上方形成芯层。 本发明还包括其他装置和方法。

    Distributed shunt structure for lapping of current perpendicular plane (CPP) heads
    8.
    发明授权
    Distributed shunt structure for lapping of current perpendicular plane (CPP) heads 有权
    分布式分流结构,用于研磨电流垂直平面(CPP)头

    公开(公告)号:US08070554B2

    公开(公告)日:2011-12-06

    申请号:US10990926

    申请日:2004-11-17

    IPC分类号: B24B49/00

    摘要: An apparatus and method for lapping and fabricating a read/write head is described. The lapping method includes performing a first lapping process on a structure having the read/write head fabricated therein. The first lapping process is for reducing a first resistive region. The first resistive region is located proximal to a surface of the structure. The first lapping process is for achieving a first lapping benchmark. The lapping method further includes performing a second lapping process on a second resistive region. The second lapping process laps at a rate lesser than the first lapping process. The second lapping process is for achieving a second lapping benchmark. The second resistive region is interposed between the first resistive region and the read/write head. The second resistive region has a different resistive value than the second resistive region.

    摘要翻译: 描述了用于研磨和制造读/写头的装置和方法。 研磨方法包括对其中制造读/写头的结构执行第一研磨处理。 第一次研磨工艺用于减少第一电阻区域。 第一电阻区域位于结构的表面附近。 第一个研磨过程是实现第一次研磨基准。 研磨方法还包括在第二电阻区域上进行第二研磨处理。 第二次研磨过程以比第一次研磨过程低的速度进行。 第二次研磨过程是实现第二次研磨基准。 第二电阻区域介于第一电阻区域和读/写头之间。 第二电阻区域具有与第二电阻区域不同的电阻值。