公开(公告)号：US08485041B2

公开(公告)日：2013-07-16

申请号：US12737966

申请日：2009-07-10

申请人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

发明人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

IPC分类号： G01L7/00 ,  H01L29/84

CPC分类号： G01L9/0045 ,  G01L13/025

摘要： A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

摘要翻译： 传感器系统，例如压力传感器系统，包括在第一侧具有至少一个沟槽的衬底。 沟槽被设置用于在与第一侧相对的第二侧上形成第一膜片区域。 此外，第二隔膜区域和洞穴被整合到第一隔膜区域的材料中。

公开(公告)号：US20110259109A1

公开(公告)日：2011-10-27

申请号：US12737966

申请日：2009-07-10

申请人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

发明人： Marcus Ahles ,  Hubert Benzel ,  Heribert Weber

IPC分类号： G01L9/06 ,  H01L21/02 ,  H01L29/84

CPC分类号： G01L9/0045 ,  G01L13/025

摘要： A sensor system, e.g., a pressure sensor system, includes a substrate having at least one trench on a first side. The trench is provided for forming a first diaphragm region on a second side opposite from the first side. In addition, a second diaphragm region and a cavern are integrated into the material of the first diaphragm region.

摘要翻译： 传感器系统，例如压力传感器系统，包括在第一侧具有至少一个沟槽的衬底。 沟槽被设置用于在与第一侧相对的第二侧上形成第一膜片区域。 此外，第二隔膜区域和洞穴被整合到第一隔膜区域的材料中。

公开(公告)号：US07045382B2

公开(公告)日：2006-05-16

申请号：US10472650

申请日：2002-03-13

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC分类号： H01L21/00

CPC分类号： G01L9/0055 ,  B81B2203/033 ,  B81C1/00047 ,  B81C1/00246 ,  B81C2201/0116 ,  B81C2203/0742 ,  G01L9/0042 ,  G01L9/0045

摘要： Proposed is a method for manufacturing micromechanical sensors and sensors manufactured by this method, where openings are introduced into a semiconductor substrate. After the openings are introduced into the semiconductor substrate, a subsequent temperature treatment is carried out, in which the openings are converted into voids in the depth of the substrate.

摘要翻译： 提出了一种通过这种方法制造微机械传感器和传感器的方法，其中开口被引入到半导体衬底中。 在将开口引入半导体衬底之后，进行随后的温度处理，其中开口被转换成衬底深度的空隙。

公开(公告)号：US20060014392A1

公开(公告)日：2006-01-19

申请号：US11221228

申请日：2005-09-06

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC分类号： H01L21/311

CPC分类号： G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

摘要： A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

公开(公告)号：US06840111B2

公开(公告)日：2005-01-11

申请号：US10433541

申请日：2002-09-29

申请人： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Frank Schaefer

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L7/06

CPC分类号： G01L9/0052

摘要： A micromechanical component in which lateral deformations, i.e., deformations of the component parallel to its two main surfaces, are concentrated in a defined area of the component structure, making it possible to decouple lateral and vertical stresses in the component. The component structure includes at least one bellows-like structure in which lateral deformations of the component are concentrated. A pressure sensor having a micromechanical component of this type may be used, for example, for measured-value detection.

摘要翻译： 其中侧向变形（即，与其两个主表面平行的部件的变形）集中在部件结构的限定区域中的微机械部件，使得可以使部件中的横向和垂直应力解耦。 部件结构包括至少一个波纹管状结构，其中部件的侧向变形被集中。 可以使用具有这种类型的微机械部件的压力传感器，例如用于测量值检测。

公开(公告)号：US06803637B2

公开(公告)日：2004-10-12

申请号：US10169464

申请日：2002-10-28

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC分类号： B81B300

CPC分类号： B81C1/00595 ,  B81B2201/0235 ,  B81B2201/036 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0136 ,  B81C2203/0136

摘要： A micromechanical component having a substrate made from a substrate material having a first doping type, a micromechanical functional structure provided in the substrate and a cover layer to at least partially cover the micromechanical functional structure. The micromechanical functional structure has zones made from the substrate material having a second doping type, the zones being at least partially surrounded by a cavity, and the cover layer has a porous layer made from the substrate material.

摘要翻译： 一种具有由具有第一掺杂类型的衬底材料制成的衬底的微机械部件，设置在衬底中的微机械功能结构以及至少部分地覆盖微机械功能结构的覆盖层。 微机械功能结构具有由具有第二掺杂类型的基底材料制成的区域，所述区域至少部分地被空腔包围，并且覆盖层具有由基底材料制成的多孔层。

公开(公告)号：US08759136B2

公开(公告)日：2014-06-24

申请号：US13431399

申请日：2012-03-27

申请人： Hubert Benzel ,  Heribert Weber

发明人： Hubert Benzel ,  Heribert Weber

IPC分类号： H01L29/84

CPC分类号： G01L9/0042 ,  G01L9/0045 ,  G01L9/0054 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/084

摘要： An electrically insulating sheathing for a piezoresistor and a semiconductor material are provided such that the piezoresistor is able to be used in the high temperature range, e.g., for measurements at higher ambient temperatures than 200° C. A doped resistance area is initially laterally delineated by at least one circumferential essentially vertical trench and is undercut by etching over the entire area. An electrically insulating layer is then created on the wall of the trench and the undercut area, so that the resistance area is electrically insulated from the adjacent semiconductor material by the electrically insulating layer.

摘要翻译： 提供了用于压电电阻器和半导体材料的电绝缘护套，使得压敏电阻器能够在高温范围内使用，例如用于在高于200℃的较高环境温度下测量。掺杂电阻区域最初由 至少一个周向基本上垂直的沟槽，并且通过在整个区域上的蚀刻而被切削。 然后在沟槽的壁和底切区域上形成电绝缘层，使得电阻区域通过电绝缘层与相邻的半导体材料电绝缘。

公开(公告)号：US07833405B2

公开(公告)日：2010-11-16

申请号：US10450362

申请日：2001-12-13

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaeffer

IPC分类号： B23H3/00 ,  C23F1/00 ,  B31D3/00 ,  C03C25/68 ,  H01L21/00

CPC分类号： B81C1/00182 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2201/0178

摘要： A micromechanical component is described which includes a substrate; a monocrystalline layer, which is provided above the substrate and which has a membrane area; a cavity that is provided underneath the membrane area; and one or more porous areas, which are provided inside the monocrystalline layer and which have a doping that is higher than that of the surrounding layer.

摘要翻译： 描述了一种微机械部件，其包括基板; 单晶层，其设置在基板上方并具有膜面积; 设置在膜区域下方的空腔; 以及一个或多个多孔区域，其设置在单晶层内部并且具有高于周围层的掺杂。

公开(公告)号：US07479232B2

公开(公告)日：2009-01-20

申请号：US11221228

申请日：2005-09-06

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC分类号： H01L21/302 ,  B81C1/00

CPC分类号： G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

摘要： A method is for producing a semiconductor component, e.g., a multilayer semiconductor element, e.g., a micromechanical component, e.g., a pressure sensor, having a semiconductor substrate, e.g., made of silicon, and a semiconductor component produced according to the method. To reduce the production cost of such a semiconductor component, in a first step a first porous layer is produced in the semiconductor component, and in a second step a hollow or cavity is produced under or from the first porous layer in the semiconductor component, with the hollow or cavity capable of being provided with an external access opening.

摘要翻译： 一种用于制造半导体部件的方法，例如多层半导体元件，例如具有例如由硅制成的半导体衬底的微机械部件，例如压力传感器，以及根据该方法制造的半导体部件。 为了降低这种半导体部件的制造成本，在第一步骤中，在半导体部件中制造第一多孔层，在第二工序中，在半导体部件的第一多孔层的下面或从半导体部件的第一多孔层制造中空或空腔， 所述中空或空腔能够设置有外部通路口。

公开(公告)号：US20080286970A1

公开(公告)日：2008-11-20

申请号：US12152241

申请日：2008-05-12

申请人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

发明人： Hubert Benzel ,  Heribert Weber ,  Hans Artmann ,  Frank Schaefer

IPC分类号： H01L21/306

CPC分类号： G01L9/0042 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00047 ,  B81C1/00595 ,  B81C2201/0115 ,  G01L9/0045 ,  H01L21/3063

摘要： A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer.

摘要翻译： 一种制造半导体部件的方法包括在所述半导体部件的p掺杂层中形成n掺杂层，其中所述n掺杂层包括以下中的至少一种：筛状层或网状层。 该方法还包括在n掺杂层的材料之间对p-掺杂层进行腐蚀蚀刻以形成顶部电极，以及在n-掺杂层下方形成空腔。