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公开(公告)号：US06458907B1
公开(公告)日：2002-10-01
申请号：US09677586
申请日：2000-10-03
IPC分类号： C08F23004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。
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公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译： 通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。 抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。
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公开(公告)号：US06171757B2
公开(公告)日：2001-01-09
申请号：US09350937
申请日：1999-07-12
IPC分类号： G03F7004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。
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公开(公告)号：US06346362B1
公开(公告)日：2002-02-12
申请号：US09593704
申请日：2000-06-15
IPC分类号： G03F7039
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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公开(公告)号：US06689540B2
公开(公告)日：2004-02-10
申请号：US10040446
申请日：2002-01-09
IPC分类号： G03F740
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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公开(公告)号：US06503692B2
公开(公告)日：2003-01-07
申请号：US10165582
申请日：2002-06-07
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
IPC分类号： G03F700
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
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公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译： 本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。 本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。 本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.
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公开(公告)号：US06420088B1
公开(公告)日：2002-07-16
申请号：US09602967
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
IPC分类号： G03C1825
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译： 特征在于存在具有侧生发色团部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。
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公开(公告)号：US06858357B2
公开(公告)日：2005-02-22
申请号：US10657665
申请日：2003-09-08
申请人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
CPC分类号： G03F1/32 , C23C14/0641 , C23C14/0676 , C23C14/352 , G03F7/16 , Y10T428/265
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
摘要翻译： 通过由金属，硅，氮或金属，硅，氮和氧制成的光学半透明的膜形成产生透射光的相移的衰减的嵌入式相移光掩模坯料。 通过该方法获得宽范围的光学透射（0.001nm至高达193nm的20％）。 实现后沉积工艺以获得在工业中使用的所需性能（相对于激光照射和酸处理的光学性质的稳定性）。 实现用于溅射靶的特殊制造工艺以降低膜的缺陷。
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公开(公告)号：US06653027B2
公开(公告)日：2003-11-25
申请号：US09793646
申请日：2001-02-26
申请人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
发明人： Marie Angelopoulos , Katherina E. Babich , Cameron James Brooks , S. Jay Chey , C. Richard Guarnieri , Michael Straight Hibbs , Kenneth Christopher Racette
IPC分类号： G03F900
CPC分类号： G03F1/32 , C23C14/0641 , C23C14/0676 , C23C14/352 , G03F7/16 , Y10T428/265
摘要： An attenuating embedded phase shift photomask blank that produces a phase shift of the transmitted light is formed with an optically translucent film made of metal, silicon, nitrogen or metal, silicon, nitrogen and oxygen. A wide range of optical transmission (0.001% up to 20% at 193 nm) is obtained by this process. A post deposition process is implemented to obtain the desired properties (stability of optical properties with respect to laser irradiation and acid treatment) for use in industry. A special fabrication process for the sputter target is implemented to lower the defects of the film.
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