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公开(公告)号：US06346362B1
公开(公告)日：2002-02-12
申请号：US09593704
申请日：2000-06-15
IPC分类号： G03F7039
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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公开(公告)号：US06689540B2
公开(公告)日：2004-02-10
申请号：US10040446
申请日：2002-01-09
IPC分类号： G03F740
CPC分类号： G03F7/0758 , C08F8/42 , C08F257/02 , C08L51/003 , C08L51/08 , G03F7/038 , G03F7/039 , Y10S430/143 , Y10S430/168 , C08L2666/02
摘要： Compositions comprising a polymer having silicon, germanium and/or tin; and a protecting group grafted onto a polymeric backbone are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含具有硅，锗和/或锡的聚合物的组合物; 并且接枝到聚合物主链上的保护基可用作抗蚀剂并且对成像照射敏感，同时显示出增强的抗反应离子蚀刻的抗性。
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公开(公告)号：US06420084B1
公开(公告)日：2002-07-16
申请号：US09602136
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Robert N. Lang , Arpan P. Mahorowala , David R. Medeiros , Wayne M. Moreau
IPC分类号： G03F7004
CPC分类号： G03F7/0757
摘要： The invention provides improved resist compositions and lithographic methods using the resist compositions of the invention. The resist compositions of the invention are acid-catalyzed resists which are characterized by the presence of an SiO-containing polymer. The invention also encompasses methods of forming patterned material layers (especially conductive, semiconductive, or magnetic material structures) using the combination of the SiO-containing resist and a halogen compound-containing pattern transfer etchant where the halogen is Cl, Br or I.
摘要翻译： 本发明提供使用本发明的抗蚀剂组合物的改进的抗蚀剂组合物和平版印刷方法。 本发明的抗蚀剂组合物是酸催化的抗蚀剂，其特征在于存在含SiO的聚合物。 本发明还包括使用含SiO的抗蚀剂和含卤素化合物的图案转移蚀刻剂的组合形成图案化材料层（特别是导电，半导体或磁性材料结构）的方法，其中卤素是Cl，Br或I.
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公开(公告)号：US06458907B1
公开(公告)日：2002-10-01
申请号：US09677586
申请日：2000-10-03
IPC分类号： C08F23004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。
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公开(公告)号：US06171757B2
公开(公告)日：2001-01-09
申请号：US09350937
申请日：1999-07-12
IPC分类号： G03F7004
CPC分类号： G03F7/0042 , G03F7/027
摘要： Compositions comprising a polymer of organometallic polymerizable monomer acid or ester are useful as resists and are sensitive to imaging irradiation while exhibiting enhanced resistance to reactive ion etching.
摘要翻译： 包含有机金属可聚合单体酸或酯的聚合物的组合物可用作抗蚀剂，并且对显影照射敏感，同时显示增强的抗反应离子蚀刻性。
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公开(公告)号：US06436605B1
公开(公告)日：2002-08-20
申请号：US09350939
申请日：1999-07-12
申请人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
发明人： Marie Angelopoulos , Ari Aviram , Edward D. Babich , Timothy Allan Brunner , Thomas Benjamin Faure , C. Richard Guarnieri , Ranee W. Kwong , Karen E. Petrillo
IPC分类号： G03F7004
CPC分类号： G03F7/0043
摘要： The reactive ion etching resistance of radiation sensitive resist composition is enhanced by adding at least one organometallic compound to a radiation sensitive polymer. The resist composition can be patterned and used as mask for patterning an underlying layer.
摘要翻译： 通过向辐射敏感聚合物中加入至少一种有机金属化合物来增强辐射敏感抗蚀剂组合物的反应离子蚀刻电阻。 抗蚀剂组合物可以被图案化并用作用于图案化下层的掩模。
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公开(公告)号：US06503692B2
公开(公告)日：2003-01-07
申请号：US10165582
申请日：2002-06-07
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
IPC分类号： G03F700
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
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公开(公告)号：US06420088B1
公开(公告)日：2002-07-16
申请号：US09602967
申请日：2000-06-23
申请人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
发明人： Marie Angelopoulos , Ari Aviram , C. Richard Guarnieri , Wu-Song Huang , Ranee Kwong , Wayne M. Moreau
IPC分类号： G03C1825
CPC分类号： C08G77/20 , C08G77/38 , G03F7/0757 , G03F7/091 , Y10S430/151
摘要： Antireflective compositions characterized by the presence of an SiO-containing polymer having pendant chromophore moieties are useful antireflective coating/hardmask compositions in lithographic processes. These compositions provide outstanding optical, mechanical and etch selectivity properties while being applicable using spin-on application techniques. The compositions are especially useful in lithographic processes used to configure underlying material layers on a substrate, especially metal or semiconductor layers.
摘要翻译： 特征在于存在具有侧生发色团部分的含SiO聚合物的抗反射组合物是光刻工艺中有用的抗反射涂层/硬掩模组合物。 这些组合物提供突出的光学，机械和蚀刻选择性，同时适用于使用旋涂应用技术。 所述组合物在用于在基材上，尤其是金属或半导体层上配置下层材料层的光刻工艺中特别有用。
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9.发明授权Method and apparatus for tuning field for plasma processing using corrected electrode 失效用于使用校正电极进行等离子体处理的调谐场的方法和装置
公开(公告)号：US5716486A
公开(公告)日：1998-02-10
申请号：US635056
申请日：1996-04-19
申请人： Gary S. Selwyn , Manoj Dalvie , C. Richard Guarnieri , James J. McGill , Gary W. Rubolff , Maheswaran Surendra
发明人： Gary S. Selwyn , Manoj Dalvie , C. Richard Guarnieri , James J. McGill , Gary W. Rubolff , Maheswaran Surendra
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/683 , C23C14/50 , C23C16/00 , C23F1/02
CPC分类号： H01J37/32623 , H01J37/32532 , H01J37/32697 , H01L21/6831
摘要： A device for reducing plasma irregularities includes an electrode assembly capable of applying an electric potential to said plasma. The electrode assembly includes a portion for reducing the plasma irregularities. The portion which reduces the plasma irregularities includes alternately a buried portion which is capable of altering the potential within the buried element, or else a conditioned portion of the surface which controls reflectivity and/or emissivity of portions of a surface of the electrode assembly differently.
摘要翻译： 用于减小等离子体不规则的装置包括能够对所述等离子体施加电位的电极组件。 电极组件包括用于减小等离子体不规则的部分。 减少等离子体不规则的部分交替地包括能够改变掩埋元件内的电位的掩埋部分，或者表面的调节部分，其控制电极组件的表面的部分的反射率和/或发射率不同。
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公开(公告)号：US5064681A
公开(公告)日：1991-11-12
申请号：US364071
申请日：1989-06-08
IPC分类号： C23C14/04 , C23C14/22 , H01L21/20 , H01L21/268 , H01L21/3205 , H05K3/14
CPC分类号： H01L21/32051 , C23C14/048 , C23C14/22 , H01L21/268 , H05K3/146
摘要： The invention relates to a dry method for depositing a material on a substrate having nucleating sites for the material which includes deposition of a material in the vapor phase on the substrate and simultaneous ablation of the substrate by ablation methods for controlled removal of the nucleating sites from the substrate. The removal of the nucleating sites is controlled to minimize or selectively prevent coating of the substrate by the material. The method can be used to form material patterns on the substrate such as electrical circuits or for adhering material to a substrate that is difficult to metallize such as organic polymers or ceramics.
摘要翻译： 本发明涉及一种用于在材料上沉积材料的干法，该材料具有用于材料的成核位置，该材料包括在衬底上沉积气相中的材料，并通过消融方法同时消除基底，从而控制将成核位点从 底物。 控制成核部位的去除以最小化或选择性地防止材料对基材的涂覆。 该方法可以用于在诸如电路的基板上形成材料图案，或用于将材料粘附到难以金属化的基板上，例如有机聚合物或陶瓷。
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