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    Low Temperature Process for TFT Fabrication
    1.
    发明申请
    Low Temperature Process for TFT Fabrication 有权
    TFT制造的低温工艺

    公开(公告)号：US20080087960A1

    公开(公告)日：2008-04-17

    申请号：US11946040

    申请日：2007-11-27

    申请人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    发明人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    IPC分类号： H01L29/786 ,  H01L21/441

    CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

    摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.

    摘要翻译： 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2 H 2等离子体。 在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 一层沉积在H 2 N或氩稀释条件下，并具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

    Low temperature process for TFT fabrication
    2.
    发明授权
    Low temperature process for TFT fabrication 有权
    TFT制造的低温工艺

    公开(公告)号：US07915114B2

    公开(公告)日：2011-03-29

    申请号：US11946040

    申请日：2007-11-27

    申请人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    发明人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

    摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.

    摘要翻译： 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2等离子体。 在使栅极金属进入H 2等离子体之后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 在H2或氩稀释条件下沉积一层，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的总体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下将硅烷，膦和氢气流入处理室，在衬底上形成n +硅膜。

    Low temperature process for TFT fabrication
    3.
    发明授权
    Low temperature process for TFT fabrication 有权
    TFT制造的低温工艺

    公开(公告)号：US07300829B2

    公开(公告)日：2007-11-27

    申请号：US10453333

    申请日：2003-06-02

    申请人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    发明人： Mark Hsiao ,  Dong-Kil Yim ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger ,  Woong-Kwon Kim ,  Duk-Chul Yun ,  Youn-Gyung Chang

    IPC分类号： H01L21/20 ,  H01L21/84 ,  H01L21/336

    CPC分类号： H01L29/66765 ,  H01L29/4908 ,  H01L29/78669 ,  H01L29/78678

    摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.

    摘要翻译： 制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。 衬底可以是绝缘衬底或滤色器。 在第一种方法中，栅极金属经受H 2 H 2等离子体。 在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。 在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。 一层沉积在H 2 N 2或氩稀释条件下，并且具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。 在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

    Low temperature process for passivation applications
    4.
    发明授权
    Low temperature process for passivation applications 有权
    钝化应用的低温工艺

    公开(公告)号：US07086918B2

    公开(公告)日：2006-08-08

    申请号：US10317774

    申请日：2002-12-11

    申请人： Mark Hsiao ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger

    发明人： Mark Hsiao ,  Takako Takehara ,  Quanyuan Shang ,  William R. Harshbarger

    IPC分类号： H01J9/00 ,  H01J9/24

    CPC分类号： H01L51/5253

    摘要： An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protective layer over the cathode. In another embodiment, the organic electroluminescent device is encapsulated with an inner encapsulation layer on the cathode layer, and an outer encapsulation layer on the inner encapsulation layer. The inner layer is optimized for adhesion to the cathode layer.

    摘要翻译： 一种有机电致发光器件，包括在衬底上的阳极层，阳极层上的有机层和有机层上的阴极层。 在一个实施例中，在阴极上沉积保护层之前，将阴极层经受H 2 O 3等离子体。 在另一个实施方案中，有机电致发光器件被封装在阴极层上的内部封装层和内部封装层上的外部封装层。 内层被优化用于与阴极层的粘附。

    Method for supporting a glass substrate to improve uniform deposition thickness
    5.
    发明授权
    Method for supporting a glass substrate to improve uniform deposition thickness 有权
    支撑玻璃基板以改善均匀沉积厚度的方法

    公开(公告)号：US07732010B2

    公开(公告)日：2010-06-08

    申请号：US11406136

    申请日：2006-04-18

    申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  Robert I. Greene ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    IPC分类号： C23C16/00

    CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

    摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.

    摘要翻译： 一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层 铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸 约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上 基板接触面积。

    Anodized substrate support
    6.
    发明申请
    Anodized substrate support 有权
    阳极氧化的底物支持

    公开(公告)号：US20060185795A1

    公开(公告)日：2006-08-24

    申请号：US11406136

    申请日：2006-04-18

    申请人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    发明人： Soo Choi ,  Beom Park ,  Quanyuan Shang ,  Robert Greene ,  John White ,  Dong-Kil Yim ,  Chung-Hee Park ,  Kam Law

    IPC分类号： H01L21/306 ,  C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/32082 ,  C23C16/4581 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18

    摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 80 to about 200 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 80 to about 200 micro-inches.

    摘要翻译： 提供了一种基板支撑件及其制造方法。 在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。 以基板支撑表面为中心的涂层的至少一部分具有介于约80至约200微英寸之间的表面光洁度。 在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于将基底支撑在约80至约200微英寸之间。

    Reducing electrostatic charge by roughening the susceptor
    7.
    发明授权
    Reducing electrostatic charge by roughening the susceptor 有权
    通过粗化基座来减少静电电荷

    公开(公告)号：US08372205B2

    公开(公告)日：2013-02-12

    申请号：US11182168

    申请日：2005-07-15

    申请人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park

    发明人： Soo Young Choi ,  Beom Soo Park ,  Quanyuan Shang ,  John M. White ,  Dong-Kil Yim ,  Chung-Hee Park

    IPC分类号： H01L21/306 ,  C23C16/00 ,  C23F1/00

    CPC分类号： C23C16/4581 ,  B24C1/06 ,  B24C1/10 ,  B24C3/322 ,  C23C16/4404 ,  C23C16/545 ,  C25D11/04 ,  C25D11/16 ,  C25D11/18 ,  H01J37/32082 ,  H01J37/32477 ,  H01J37/32559 ,  H01J37/32715 ,  H01L21/68757

    摘要： A substrate support and method for fabricating the same are provided. In one embodiment of the invention, a substrate support includes an electrically conductive body having a substrate support surface that is covered by an electrically insulative coating. At least a portion of the coating centered on the substrate support surface has a surface finish of between about 200 to about 2000 micro-inches. In another embodiment, a substrate support includes an anodized aluminum body having a surface finish on the portion of the body adapted to support a substrate thereon of between about 200 to about 2000 micro-inches. In one embodiment, a substrate support assembly includes an electrically conductive body having a substrate support surface, a substrate support structure that is adapted to support the conductive body and the conductive body is covered by an electrically insulative coating.

    摘要翻译： 提供了一种基板支撑件及其制造方法。 在本发明的一个实施例中，衬底支撑件包括具有由电绝缘涂层覆盖的衬底支撑表面的导电体。 以基板支撑表面为中心的涂层的至少一部分具有介于约200至约2000微英寸之间的表面光洁度。 在另一个实施例中，衬底支撑件包括阳极化铝体，其在主体部分上具有表面光洁度，其适于在其上支撑约200至约2000微英寸的衬底。 在一个实施例中，衬底支撑组件包括具有衬底支撑表面的导电体，适于支撑导电体的衬底支撑结构，并且导电体被电绝缘涂层覆盖。

    Annealing an amorphous film using microwave energy
    9.
    发明授权
    Annealing an amorphous film using microwave energy 失效
    使用微波能量退火非晶膜

    公开(公告)号：US06172322B2

    公开(公告)日：2001-01-09

    申请号：US08965939

    申请日：1997-11-07

    申请人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

    发明人： Quanyuan Shang ,  Robert McCormick Robertson ,  Kam S. Law ,  Takako Takehara ,  Taekyung Won ,  Sheng Sun

    IPC分类号： H05B680

    CPC分类号： C23C16/56

    摘要： A system and method for annealing a film on a substrate in a processing chamber, including a microwave generator disposed to provide microwaves to an area within the interior of the chamber. The microwaves have a frequency such that the film is substantially absorptive at the frequency but the substrate is not substantially absorptive at the frequency. A waveguide distributes the microwaves over the surface of the film to provide a substantially uniform dosage of microwaves over the surface of the film. The method includes depositing a film on a substrate in the processing chamber. During at least a portion of the time of the depositing step, microwaves are generated having a frequency such that the film has an absorption peak at the frequency but the substrate lacks a substantial absorption peak at the frequency. The microwaves are directed towards the film.

    摘要翻译： 一种用于对处理室中的基板上的膜进行退火的系统和方法，该处理室包括微波发生器，微波发生器被设置成向腔室内部的区域提供微波。 微波的频率使得膜在频率上基本上是吸收性的，但是基底在频率上基本上不吸收。 波导将微波分布在膜的表面上，以在膜的表面上提供基本上均匀的微波用量的微波。 该方法包括在处理室中的衬底上沉积膜。 在沉积步骤的至少一部分时间内，产生具有频率使得该膜在频率处具有吸收峰但基底在该频率处缺少实质吸收峰的频率的微波。 微波指向电影。