摘要:
A vehicle is armored the steps of sequentially making a steel plate with a thickness of 4 mm to 15 mm of by weight 0.2 to 0.4%carbon, 0.3 to 0.8%silicon, 1.0 to 2.5%manganese, max. 0.02%phosphorous, max. 0.02%sulfur, max. 0.05%aluminum, max. 2%copper, 0.1 to 0.5%chromium, max. 2%nickel 0.1 to 1%molybdenum, 0.001 to 0.01%boron, 0.01 to 1%tungsten, max. 0.05%nitrogen, and balanceiron and impurities. This plate is heated to above the AC3 temperature and deformed without cooling in a press. While still in the press, the steel plate is cooled and cured. Then the deformed and cured steel plate is taken out of the press and mounted on the motor vehicle without significant further working or shaping.
摘要:
The invention relates to a method of fabricating a CMOS device, comprising providing a semiconductor substrate (101) having therein a layer of insulating material (102), the method comprising providing a layer (106) of a first material over the insulating layer (102), the thickness of the layer (106) of the first material being less in a first region (103) for supporting a first active device than in a second region (104) for supporting a second active device. A layer (107) of a second material is then deposited over the layer (106) of a first material, and the structure is then subjected to a thermal treatment to alloy the first and second materials. The portion of the layers over the first region is entirely alloyed, whereas the portion of the layers over the second region is not, so that a portion (109) of the layer (106) of the first material remains.
摘要:
The invention relates to a thermal spraying apparatus (1) for coating a surface (2) of a substrate (3) by means of a coating material (4). The thermal spraying apparatus (1) includes a spray pistol (5) with a heating device for heating the coating material (4) in a heating zone (6) and also a charging apparatus (7) with a feed (8) through which the coating material (4) can be introduced into the heating zone (6). In this arrangement the thermal spraying apparatus is so designed that a relative position (9) between the feed (8) and the heating zone (6) can be changed in the operating state.
摘要:
The invention relates to a method of operating a frequency divider. The frequency divider includes a plurality of divider cells arranged in a chain. Each divider cell is adapted to divide a frequency of an input signal with one of two enabled division ratios in accordance with an applied division ratio control signal, and each divider cell but the last is adapted to provide a frequency divided signal as an input signal for a respective next divider cell. In order to enable a Fractional-N division, the method comprises receiving and buffering a new division ratio control signal for each of the divider cells, and synchronizing an application of the buffered division ratio control signals to the divider cells with a status of a current division cycle. The invention relates equally to a corresponding frequency divider, PLL frequency synthesizer, RF front end, device and system.
摘要:
A nozzle for the head of a plasma torch comprises a central aperture and is provided with a plurality of cooling channels uniformly distributed around the central longitudinal axis of the nozzle in a polar configuration. Each of the cooling channels comprises a first cooling channel portion and a second cooling channel portion communicating with the first one and enclosing an angle between each other. The first cooling channel portions extend radially towards the central longitudinal axis of the nozzle and at least approximately perpendicularly thereto. The second cooling channel portions extend under an acute angle with respect to the central longitudinal axis. By this design, a substantially more uniform and more effective cooling of the nozzle is achieved, with the result that the useful working life is prolonged.
摘要:
A method of fabricating a self-aligned Schottky junction (29) in respect of a semiconductor device. After gate etching and spacer formation, a recess defining the junction regions is formed in the Silicon substrate (10) and a SiGe layer (22) is selectively grown therein. A dielectric layer (24) is then provided over the gate (14) and the SiGe layer (22), a contact etch is performed to form contact holes (26) and the SiGe material (22) is then removed to create cavities (28) in the junction regions. Finally the cavities (28) are filled with metal to form the junction (29). Thus, a process is provided for self-aligned fabrication of a Schottky junction having relatively low resistivity, wherein the shape and position of the junction can be well controlled.
摘要:
The present invention provides an airframe structure of an aircraft or spacecraft, with: a hollow body section which can be subjected to an internal pressure; a membrane arrangement which has at least one single-part, multi-curved membrane component for sealing off the internal pressure from an external pressure which acts on the hollow body section and differs from the internal pressure; and a joining structure for a pressuretight joining of the membrane arrangement to a region of the hollow body section; wherein the membrane arrangement forms a receiving well which is accessible from outside the hollow body section, extends at least partially into the hollow body -section and is for receiving a component of the aircraft or spacecraft.
摘要:
The invention relates to a hollow fibre separation module comprising an inlet (20) for the gas to be dried, an outlet (22) for dried gas, an access element (26) and a discharge element (28) for circulation gas, and a plurality of hollow fibres which respectively extend from the inlet (29) to the outlet (22) and comprise an inner region which communicates with the inlet (20) on one end of each hollow fibre, and with the outlet (22) on the other end of each hollow fibre. Said hollow fibres are wound up in a plurality of layers (40, 42, 44) to form a hollow cylindrical winding. Each layer (40, 42, 44) is inwardly defined by an imaginary cylinder (35, 36, 37) and has a number of hollow fibres which are wound onto said cylinder (35, 36, 37) in a helical manner with an alpha angle of inclination, are located at a distance a from each other, and are arranged on the cylinder in a homogeneously distributed manner. A layer (40) differs from an adjacent layer (e.g. 42) in that the fibres of one of the layers all form a plus alpha winding angle, whereas the fibres of the adjacent layers all form a minus alpha winding angle.
摘要:
The present invention provides a new and unique method and apparatus for a new data speed switching scheme for a wired data interface. The method features receiving high-speed serial data over a physical link using a first coding scheme in a receiver; receiving a transmission mode change signal transmitted with sequential information about a change in a data transmission mode of the receiver using a second coding scheme and switching the data transmission mode of the receiver in response thereto. The data transmission modes may include at least one low-power mode where no data transmission is possible and the receiver is powered down. The at least one low-power mode may include two different power down states, each having different wake-up times. The data transmission modes may also include at least one high speed mode where data transmission is possible and the receiver is on. The at least one high speed mode may include several high speed modes, each having different data transmission rates.
摘要:
The invention relates to a method of fabricating a CMOS device, comprising providing a semiconductor substrate (101) having therein a layer of insulating material (102), the method comprising providing a layer (106) of a first material over the insulating layer (102), the thickness of the layer (106) of the first material being less in a first region (103) for supporting a first active device than in a second region (104) for supporting a second active device. A layer (107) of a second material is then deposited over the layer (106) of a first material, and the structure is then subjected to a thermal treatment to alloy the first and second materials. The portion of the layers over the first region is entirely alloyed, whereas the portion of the layers over the second region is not, so that a portion (109) of the layer (106) of the first material remains.