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    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
    2.
    发明申请
    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER 审中-公开
    功率半导体有一个轻型的DRIFT和缓冲层

    公开(公告)号：US20090166729A1

    公开(公告)日：2009-07-02

    申请号：US11965387

    申请日：2007-12-27

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

    摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压时的击穿电荷量。

    Power semiconductor having a lightly doped drift and buffer layer
    3.
    发明授权
    Power semiconductor having a lightly doped drift and buffer layer 有权
    功率半导体具有轻掺杂漂移和缓冲层

    公开(公告)号：US07936010B2

    公开(公告)日：2011-05-03

    申请号：US12342721

    申请日：2008-12-23

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger than a breakdown charge amount at breakdown voltage.

    摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压下的击穿电荷量。

    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
    4.
    发明申请
    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER 有权

    公开(公告)号：US20090166727A1

    公开(公告)日：2009-07-02

    申请号：US12342721

    申请日：2008-12-23

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

    Method for producing a semiconductor device with a semiconductor body
    10.
    发明授权
    Method for producing a semiconductor device with a semiconductor body 有权
    一种具有半导体本体的半导体器件的制造方法

    公开(公告)号：US08569150B2

    公开(公告)日：2013-10-29

    申请号：US13085196

    申请日：2011-04-12

    申请人： Armin Willmeroth ,  Franz Hirler

    发明人： Armin Willmeroth ,  Franz Hirler

    IPC分类号： H01L21/20 ,  H01L21/38

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66727 ,  H01L29/8083

    摘要： A semiconductor device with a semiconductor body and method for its production is disclosed. The semiconductor body includes drift zones of epitaxially grown semiconductor material of a first conduction type. The semiconductor body further includes charge compensation zones of a second conduction type complementing the first conduction type, which are arranged laterally adjacent to the drift zones. The charge compensation zones are provided with a laterally limited charge compensation zone doping, which is introduced into the epitaxially grown semiconductor material. The epitaxially grown semiconductor material includes 20 to 80 atomic % of the doping material of the drift zones and a doping material balance of 80 to 20 atomic % introduced by ion implantation and diffusion.

    摘要翻译： 公开了一种半导体器件及其制造方法。 半导体本体包括第一导电类型的外延生长的半导体材料的漂移区。 半导体本体还包括与第一导电类型相互补充的第二导电类型的电荷补偿区，它们被布置成横向邻近漂移区。 电荷补偿区带有横向有限的电荷补偿区掺杂，其被引入外延生长的半导体材料中。 外延生长的半导体材料包括漂移区的掺杂材料的20至80原子％和通过离子注入和扩散引入的80至20原子％的掺杂材料平衡。