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    Power semiconductor having a lightly doped drift and buffer layer
    1.
    发明授权
    Power semiconductor having a lightly doped drift and buffer layer 有权
    功率半导体具有轻掺杂漂移和缓冲层

    公开(公告)号：US07936010B2

    公开(公告)日：2011-05-03

    申请号：US12342721

    申请日：2008-12-23

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger than a breakdown charge amount at breakdown voltage.

    摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压下的击穿电荷量。

    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
    2.
    发明申请
    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER 有权

    公开(公告)号：US20090166727A1

    公开(公告)日：2009-07-02

    申请号：US12342721

    申请日：2008-12-23

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER
    4.
    发明申请
    POWER SEMICONDUCTOR HAVING A LIGHTLY DOPED DRIFT AND BUFFER LAYER 审中-公开
    功率半导体有一个轻型的DRIFT和缓冲层

    公开(公告)号：US20090166729A1

    公开(公告)日：2009-07-02

    申请号：US11965387

    申请日：2007-12-27

    申请人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    发明人： Markus Zundel ,  Franz Hirler ,  Armin Willmeroth

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095

    摘要： A power semiconductor element having a lightly doped drift and buffer layer is disclosed. One embodiment has, underneath and between deep well regions of a first conductivity type, a lightly doped drift and buffer layer of a second conductivity type. The drift and buffer layer has a minimum vertical extension between a drain contact layer on the adjacent surface of a semiconductor substrate and the bottom of the deepest well region which is at least equal to a minimum lateral distance between the deep well regions. The vertical extension can also be determined such that a total amount of dopant per unit area in the drift and buffer layer is larger then a breakdown charge amount at breakdown voltage.

    摘要翻译： 公开了一种具有轻掺杂漂移和缓冲层的功率半导体元件。 一个实施例具有在第一导电类型的深阱区之下并且在第二导电类型的轻掺杂漂移和缓冲层之间并且在深阱区之间。 漂移和缓冲层在半导体衬底的相邻表面上的漏极接触层和最深阱区的底部之间具有至少等于深阱区域之间的最小横向距离的最小垂直延伸。 也可以确定垂直延伸，使得漂移缓冲层中的每单位面积的掺杂剂的总量大于击穿电压时的击穿电荷量。