公开(公告)号：US06802900B2

公开(公告)日：2004-10-12

申请号：US10022545

申请日：2001-12-20

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B19/08

摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

摘要翻译： 提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

公开(公告)号：US07022181B2

公开(公告)日：2006-04-04

申请号：US10014418

申请日：2001-12-14

申请人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/00

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06 ,  Y10S117/911

摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

公开(公告)号：US06953506B2

公开(公告)日：2005-10-11

申请号：US09978633

申请日：2001-10-18

申请人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  H01L21/00 ,  H01L21/673 ,  H01L21/8242

CPC分类号： H01L21/67086 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6732 ,  H01L21/67326 ,  H01L21/67346 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/911 ,  Y10S414/135 ,  Y10T117/10 ,  Y10T117/1024

摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

摘要翻译： 晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。 通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于 它的凹陷和盖子在其开口的边缘。 还公开了利用晶片盒的液相生长系统和液相生长工艺。

公开(公告)号：US06951584B2

公开(公告)日：2005-10-04

申请号：US10364517

申请日：2003-02-12

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  C30B31/04

CPC分类号： C30B29/06 ,  C30B19/062

摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06551908B2

公开(公告)日：2003-04-22

申请号：US09964332

申请日：2001-09-28

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B100

CPC分类号： C30B29/06 ,  C30B19/062

摘要： A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种制造半导体薄膜的方法，其中通过将多个基板浸入坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液含有半导体作为溶质，同时将其移动到 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US07175706B2

公开(公告)日：2007-02-13

申请号：US10505979

申请日：2003-02-21

申请人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： C30B11/14

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

摘要翻译： 提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。 切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

公开(公告)号：US20060194417A1

公开(公告)日：2006-08-31

申请号：US10530189

申请日：2003-10-10

申请人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

发明人： Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki ,  Masaki Mizutani

IPC分类号： H01L31/0376 ,  H01L21/20

CPC分类号： C30B29/06 ,  C30B11/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A polycrystalline silicon substrate for a solar cell formed by growing a high purity polycrystalline silicon layer on a surface of a base obtained by slicing a polycrystalline silicon ingot obtained by melting metallurgical grade silicon and performing one-direction solidification, wherein one-direction solidification is performed on a melt prepared by adding B to molten metallurgical grade silicon at an amount of 2×1018 cm−3 to 5×1019 cm−3 based on the concentration in the melt to produce the polycrystalline silicon ingot. With this structure, it is possible to easily obtain a polycrystalline silicon substrate having resistivity and the type of conductivity suitable for manufacture of a solar cell.

摘要翻译： 一种用于太阳能电池的多晶硅衬底，其通过在通过熔化冶金级硅获得的多晶硅锭切片并进行单向凝固而获得的基底表面上生长高纯度多晶硅层而形成，其中执行单向凝固 在通过以2×10 18 cm -3至5×10 19 cm -3的量向熔融冶金级硅中加入B制备的熔体上， 3，根据熔体中的浓度制造多晶硅锭。 利用这种结构，可以容易地获得具有电阻率的多晶硅基板和适合制造太阳能电池的导电类型。

公开(公告)号：US20050124139A1

公开(公告)日：2005-06-09

申请号：US10505979

申请日：2003-02-21

申请人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Shunichi Ishihara ,  Katsumi Nakagawa ,  Hiroshi Sato ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

IPC分类号： C01B33/02 ,  C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L21/208 ,  H01L31/18 ,  H01L21/301 ,  H01L21/46 ,  H01L21/78

CPC分类号： C30B11/00 ,  C30B29/06 ,  C30B33/00 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.

摘要翻译： 提供了具有作为太阳能电池基板的优异特性的多晶硅基板的制造方法。 切割通过定向凝固10制成的多晶硅锭，使得多晶硅基板13的主表面14的法线基本上垂直于通过定向凝固10制成的多晶硅锭的晶粒11的纵向方向。

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US06872248B2

公开(公告)日：2005-03-29

申请号：US10400636

申请日：2003-03-28

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B19/06 ,  C30B29/06 ,  H01L21/208 ,  C30B19/04 ,  C30B19/10

CPC分类号： C30B19/068 ,  C30B19/062 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

摘要翻译： 一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在 所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。 适用于实施所述液相生长过程的液相生长装置。