公开(公告)号：US06872248B2

公开(公告)日：2005-03-29

申请号：US10400636

申请日：2003-03-28

申请人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

发明人： Masaki Mizutani ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida

IPC分类号： C30B19/06 ,  C30B29/06 ,  H01L21/208 ,  C30B19/04 ,  C30B19/10

CPC分类号： C30B19/068 ,  C30B19/062 ,  Y10T117/10 ,  Y10T117/1024

摘要： A liquid-phase growth process comprising immersing a base substrate in a solution containing reactant species to be grown dissolved therein which is accommodated in a crucible and growing a crystal film on said substrate, characterized in that a capping member is kept afloat on the surface of said solution before said substrate is immersed in said solution and said capping member is subsided in said solution upon immersing said substrate in said solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

摘要翻译： 一种液相生长方法，包括将基底衬底浸入容纳在坩埚中的待生长的待反应物种溶液的溶液中并在所述基底上生长晶体膜，其特征在于，封盖构件保持在 所述溶液在将所述基材浸入所述溶液中之前，将所述基材浸入所述溶液中，并且所述封盖构件在所述溶液中沉降。 适用于实施所述液相生长过程的液相生长装置。

公开(公告)号：US07022181B2

公开(公告)日：2006-04-04

申请号：US10014418

申请日：2001-12-14

申请人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/00

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06 ,  Y10S117/911

摘要： In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

公开(公告)号：US06824609B2

公开(公告)日：2004-11-30

申请号：US10229123

申请日：2002-08-28

申请人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

发明人： Tetsuro Saito ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/064 ,  C30B19/02 ,  C30B19/06 ,  C30B29/06 ,  Y10S117/90 ,  Y10T117/1016 ,  Y10T117/1024

摘要： A liquid phase growth method is provided which comprises dipping a seed substrate in a solution in a vessel having a crystal raw material melted therein and growing a crystal on the substrate, wherein a fin is provided on a bottom of the vessel, for regulating a flow of the solution from a central portion outside in a radial direction in the vessel; a flow-regulating plate is provided in the vicinity of an inner sidewall of the vessel, for regulating a flow of the solution from the bottom upwardly; and the vessel is rotated while regulating a flow of the solution by an action of the fin and the flow-regulating plate to bring the solution into contact with the seed substrate. Thus, there is provided a liquid phase growth method and apparatus capable of providing a high growth rate and showing little difference in the growth rate among the substrates or within the same substrate even when a number of substrates are charged in one batch.

摘要翻译： 提供一种液相生长方法，其包括将种子基底浸入溶液中，其中晶体原料熔化在其中并在基底上生长晶体，其中在容器的底部设置有用于调节流动的翅片 从容器中沿径向外侧的中心部分的溶液; 流量调节板设置在容器的内侧壁附近，用于调节溶液从底部向上的流动; 并且通过翅片和流动调节板的作用调节溶液的流动以使溶液与种子基底接触来旋转容器。 因此，提供了一种液相生长方法和装置，其能够提供高生长速率，并且即使在一批中填充多个基板时，基板之间或同一基板内的生长速度几乎没有差异。

公开(公告)号：US06802900B2

公开(公告)日：2004-10-12

申请号：US10022545

申请日：2001-12-20

申请人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Katsumi Nakagawa ,  Tetsuro Saito ,  Tatsumi Shoji ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B1900

CPC分类号： C30B19/02 ,  C30B19/04 ,  C30B19/06 ,  C30B19/08

摘要： Provided are a liquid phase growth method including a step of immersing a substrate in a crucible storing a solvent having a growth material dissolved therein; and a step of cooling the solvent from an interior thereof, and a liquid phase growth apparatus for use in the method, by which a temperature difference of a solution is decreased and by which a deposited film is formed in a uniform thickness.

摘要翻译： 提供一种液相生长方法，包括将基板浸渍在储存溶解有生长材料的溶剂的坩埚中的步骤; 以及从其内部冷却溶剂的步骤，以及用于该方法的液相生长装置，通过该液相生长装置降低溶液的温度差并形成均匀的厚度的沉积膜。

公开(公告)号：US06951584B2

公开(公告)日：2005-10-04

申请号：US10364517

申请日：2003-02-12

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  C30B31/04

CPC分类号： C30B29/06 ,  C30B19/062

摘要： An apparatus for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种用于制造半导体薄膜的装置，其中通过将多个基板浸入填充在坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液包含半导体作为溶质，同时将其移动 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06551908B2

公开(公告)日：2003-04-22

申请号：US09964332

申请日：2001-09-28

申请人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

发明人： Noritaka Ukiyo ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Masaaki Iwane ,  Masaki Mizutani

IPC分类号： C30B100

CPC分类号： C30B29/06 ,  C30B19/062

摘要： A method for producing semiconductor thin films in which the semiconductor thin films are allowed to grow on a plurality of substrates by dipping the plurality of substrates into a solution filled in a crucible, the solution containing a semiconductor as a solute, while moving the same in the solution. An angle between a direction of a normal line on a central portion of a growing surface of each substrate and the direction of the movement of the substrates is set to be in 87 degrees or less and the movement of the substrates generates a flow of the solution.

摘要翻译： 一种制造半导体薄膜的方法，其中通过将多个基板浸入坩埚中的溶液中使半导体薄膜在多个基板上生长，该溶液含有半导体作为溶质，同时将其移动到 解决方案。 每个基板的生长表面的中心部分上的法线方向与基板的移动方向之间的角度设定在87度以下，基板的移动产生溶液的流动 。

公开(公告)号：US06953506B2

公开(公告)日：2005-10-11

申请号：US09978633

申请日：2001-10-18

申请人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

发明人： Masaaki Iwane ,  Tetsuro Saito ,  Tatsumi Shoji ,  Makoto Iwakami ,  Takehito Yoshino ,  Shoji Nishida ,  Noritaka Ukiyo ,  Masaki Mizutani

IPC分类号： C30B19/06 ,  H01L21/00 ,  H01L21/673 ,  H01L21/8242

CPC分类号： H01L21/67086 ,  H01L21/67207 ,  H01L21/67236 ,  H01L21/6732 ,  H01L21/67326 ,  H01L21/67346 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/911 ,  Y10S414/135 ,  Y10T117/10 ,  Y10T117/1024

摘要： A wafer cassette comprises a holding member having a depression corresponding to the shape of the substrate, and a cover having an opening smaller than the surface size of the substrate. The substrate is to be held in the depression by means of the holding member and the cover, and the substrate is to be covered at its one-side surface, side and all peripheral region of the other-side surface, with the holding member at its depression and with the cover at the edge of its opening. Also disclosed are a liquid-phase growth system and a liquid-phase growth process which make use of the wafer cassette.

摘要翻译： 晶片盒包括具有对应于基板形状的凹部的保持构件和具有小于基板的表面尺寸的开口的盖。 通过保持构件和盖子将基板保持在凹部中，并且基板被覆盖在另一侧表面的单侧表面，侧面和所有周边区域，保持构件位于 它的凹陷和盖子在其开口的边缘。 还公开了利用晶片盒的液相生长系统和液相生长工艺。

公开(公告)号：US06258666B1

公开(公告)日：2001-07-10

申请号：US09333019

申请日：1999-06-15

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： H01L21336

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： Provided is a method of producing a semiconductor thin film wherein while a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. These provide the method of peeling the semiconductor thin film away from the substrate without damage and the method of holding the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法，其中当形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上时，支撑构件旋转，从而将半导体薄膜剥离离开 基质。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 这些提供了将半导体薄膜远离基板剥离而不损坏的方法以及不污染保持基板的方法。

公开(公告)号：US06231667B1

公开(公告)日：2001-05-15

申请号：US09200867

申请日：1998-11-27

申请人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

发明人： Masaaki Iwane ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Shoji Nishida ,  Noritaka Ukiyo

IPC分类号： C30B1906

CPC分类号： C30B19/062 ,  C30B19/00 ,  C30B29/06

摘要： A liquid phase growth apparatus of a dipping system has a plurality of liquid phase growth chambers and liquid phase growth operations of semiconductors are carried out on a plurality of substrates in the growth chambers. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that liquid phase growth of a semiconductor on one substrate is carried out in the liquid phase growth chamber and that an annealing operation of another substrate different from the aforementioned substrate is carried out in the annealing chamber. Another liquid phase growth apparatus of the dipping system has a liquid phase growth chamber and an annealing chamber, and is constructed in such structure that a semiconductor material is dissolved into a solvent in the liquid phase growth chamber and that the annealing operation of a substrate is carried out in the annealing chamber. These provide the liquid phase growth apparatus for formation of semiconductor layer in the dipping system, suitably applicable to mass production of large-area devices such as solar cells. In addition, the liquid phase growth method is also provided.

摘要翻译： 浸渍系统的液相生长装置具有多个液相生长室，并且在生长室中的多个基板上进行半导体的液相生长操作。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且构造成使得在液相生长室中进行一个基板上的半导体的液相生长，并且退火操作 在退火室中进行与上述基板不同的另一基板。 浸渍系统的另一种液相生长装置具有液相生长室和退火室，并且被构造成使半导体材料溶解在液相生长室中的溶剂中，并且基板的退火操作为 在退火室中进行。 这些提供了用于在浸渍系统中形成半导体层的液相生长装置，适用于批量生产诸如太阳能电池的大面积装置。 此外，还提供了液相生长方法。

公开(公告)号：US06802926B2

公开(公告)日：2004-10-12

申请号：US09813137

申请日：2001-03-21

申请人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

发明人： Masaki Mizutani ,  Isao Tanikawa ,  Katsumi Nakagawa ,  Tatsumi Shoji ,  Noritaka Ukiyo ,  Yukiko Iwasaki

IPC分类号： B32B3100

CPC分类号： H01L21/76251 ,  C23C16/01 ,  C30B29/60 ,  C30B33/00 ,  H01L31/1892 ,  Y02E10/50 ,  Y10S156/93 ,  Y10S156/942 ,  Y10T156/1179 ,  Y10T156/1978

摘要： A method of producing a semiconductor thin film is provided. While a semiconductor thin film formed on a substrate is supported on a curved surface of a support member having the curved surface, the support member is rotated, thereby peeling the semiconductor thin film away from the substrate. Also provided is a method of producing a semiconductor thin film having the step of peeling a semiconductor thin film formed on a substrate away from the substrate, wherein the peeling step is carried out after the substrate is secured on a substrate support member without an adhesive. According to these methods, it is possible to peel the semiconductor thin film away from the substrate without damage and to hold the substrate without contamination.

摘要翻译： 提供一种制造半导体薄膜的方法。 虽然形成在基板上的半导体薄膜被支撑在具有曲面的支撑构件的曲面上，但是支撑构件被旋转，从而使半导体薄膜远离基板。 还提供了一种制造半导体薄膜的方法，该半导体薄膜具有将形成在基板上的半导体薄膜剥离离开基板的步骤，其中在将基板固定在基板支撑部件上而不用粘合剂之后进行剥离步骤。 根据这些方法，可以将半导体薄膜从衬底上剥离而不会损坏并且保持衬底而没有污染。