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    Filter having multiple piezoelectric thin-film resonators
    6.
    发明申请
    Filter having multiple piezoelectric thin-film resonators 有权
    具有多个压电薄膜谐振器的滤波器

    公开(公告)号：US20070279154A1

    公开(公告)日：2007-12-06

    申请号：US11806129

    申请日：2007-05-30

    申请人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda ,  Hisanori Ehara

    发明人： Shinji Taniguchi ,  Tsuyoshi Yokoyama ,  Motoaki Hara ,  Takeshi Sakashita ,  Jun Tsutsumi ,  Masafumi Iwaki ,  Tokihiro Nishihara ,  Masanori Ueda ,  Hisanori Ehara

    IPC分类号： H03H9/58 ,  H03H9/54

    CPC分类号： H03H9/605 ,  H03H3/02 ,  H03H9/02118 ,  H03H9/02141 ,  H03H9/132 ,  H03H9/173 ,  H03H9/174 ,  H03H2003/021

    摘要： A filter includes multiple piezoelectric thin-film resonators each having a substrate, a lower electrode formed on the substrate, a piezoelectric film formed on the lower electrode, and an upper electrode provided on the piezoelectric film so that the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators include a first resonator in which at least a part of an outer curved portion of the piezoelectric film of the first resonator is located further out than an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film. The multiple piezoelectric thin-film resonators includes a second resonator in which at least a part of an outer curved portion of the piezoelectric film of the second resonator substantially coincides with an outer curved portion of a region in which the upper electrode and the lower electrode face each other across the piezoelectric film or is further in than the outer curved portion of the region.

    摘要翻译： 滤波器包括多个压电薄膜谐振器，每个压电薄膜谐振器均具有基板，形成在基板上的下电极，形成在下电极上的压电薄膜和设置在压电薄膜上的上电极，使得上电极和下电极面 彼此横跨压电薄膜。 多个压电薄膜谐振器包括：第一谐振器，其中第一谐振器的压电膜的外弯曲部分的至少一部分位于比上电极和下电极的区域的外弯曲部分更远的位置 电极彼此面对压电薄膜。 多个压电薄膜谐振器包括第二谐振器，其中第二谐振器的压电膜的外部弯曲部分的至少一部分基本上与上电极和下电极面的区域的外弯曲部分重合 彼此隔着压电膜，或者比该区域的外部弯曲部分进一步。