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    Separation-material composition for photo-resist and manufacturing method of semiconductor device
    1.
    发明授权
    Separation-material composition for photo-resist and manufacturing method of semiconductor device 失效
    用于光刻胶的分离材料组合物和半导体器件的制造方法

    公开(公告)号：US07341827B2

    公开(公告)日：2008-03-11

    申请号：US10640389

    申请日：2003-08-14

    申请人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Tetsuo Aoyama

    发明人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Tetsuo Aoyama

    IPC分类号： G03F7/26

    CPC分类号： H01L21/32136 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76838

    摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.

    摘要翻译： 根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵 ，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。 根据本发明的用于光致抗蚀剂的分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁基醚。 用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。 可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀 和氧化。

    Separation-material composition for photo-resist and manufacturing method of semiconductor device
    2.
    发明申请
    Separation-material composition for photo-resist and manufacturing method of semiconductor device 审中-公开
    用于光刻胶的分离材料组合物和半导体器件的制造方法

    公开(公告)号：US20080076260A1

    公开(公告)日：2008-03-27

    申请号：US11979582

    申请日：2007-11-06

    申请人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Testu Aoyama

    发明人： Masafumi Muramatsu ,  Hayato Iwamoto ,  Kazumi Asada ,  Tomoko Suzuki ,  Toshitaka Hiraga ,  Testu Aoyama

    IPC分类号： G03C5/00 ,  G03F7/42 ,  H01L21/461

    CPC分类号： H01L21/32136 ,  G03F7/423 ,  H01L21/02063 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31133 ,  H01L21/76802 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76814 ,  H01L21/76838

    摘要： One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of ammonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthyl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.

    摘要翻译： 根据本发明的用于光刻胶的分离材料组合物的一个实例包括5.0重量％的氨基磺酸，34.7重量％的H 2 O 3，0.3重量％的1位氢氟酸铵 ，30重量％的N，N-二甲基乙酰胺和30重量％的二甘醇单正丁醚。 根据本发明的光刻胶分离材料组合物的另一个实例包括1-羟基亚乙基-1.3.0重量％的1-二膦酸，0.12重量％的氟化铵，48.38重量％的H 2 O和48.5重量％的二甘醇单正丁醚。 用于光刻胶的分离材料组合物主要用于医用液体洗涤液/科学液体，以便在光刻胶掩模的灰化过程之后除去光致抗蚀剂残留物和副产物聚合物。 可以提出用于光刻胶的分离材料组合物，使得光刻胶残留物和副产物聚合物在干蚀刻工艺之后容易除去，同时避免了低介电常数绝缘膜侵蚀 和氧化。

    Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof
    7.
    发明授权
    Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof 失效
    固体摄像装置及其制造方法以及半导体集成电路装置及其制造方法

    公开(公告)号：US07427789B2

    公开(公告)日：2008-09-23

    申请号：US11808450

    申请日：2007-06-11

    申请人： Masafumi Muramatsu

    发明人： Masafumi Muramatsu

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14638 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683

    摘要： A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4, a process for forming an interconnection portion, having an interconnection layer 8 in an insulating layer 7, on the surface side of the semiconductor substrate 4, a process for forming an adhesive layer, made of a material cured at a temperature lower than a deterioration starting temperature of the interconnection layer 8, on the surface of the interconnection portion and bonding a supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 by heat treatment at a temperature lower than the deterioration starting temperature of the interconnection layer 8 and a process for decreasing a thickness of the semiconductor substrate 4 from the back side. A solid-state image pickup device manufacturing method can bond the supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 without exerting a thermal influence upon the interconnection layer 8 that was previously formed on the surface side of the semiconductor substrate 4.

    摘要翻译： 固体摄像装置的制造方法包括在半导体基板4内形成多个光电转换元件PD的工序，在绝缘层7上形成配线层8的形成布线部的工序 半导体基板4的表面侧，在互连部的表面上形成由在互连层8的劣化开始温度以下的温度固化的材料构成的粘合剂层的工序，将支撑基板30接合到 通过在比互连层8的劣化开始温度低的温度下进行热处理，通过粘合剂层9的互连部分的表面侧以及从背面减小半导体衬底4的厚度的工艺。 固态摄像装置的制造方法可以通过粘合层9将支撑基板30与互连部的表面侧接合，而不会对预先形成在半导体基板的表面侧的布线层8产生热影响 4。

    METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP ELEMENT, AND SOLID-STATE IMAGE PICKUP ELEMENT
    8.
    发明申请
    METHOD OF MANUFACTURING SOLID-STATE IMAGE PICKUP ELEMENT, AND SOLID-STATE IMAGE PICKUP ELEMENT 失效
    制造固态图像拾取元件的方法和固态图像拾取元件

    公开(公告)号：US20090212384A1

    公开(公告)日：2009-08-27

    申请号：US12364254

    申请日：2009-02-02

    申请人： Hideki KOBAYASHI ,  Masafumi Muramatsu

    发明人： Hideki KOBAYASHI ,  Masafumi Muramatsu

    IPC分类号： H01L27/146 ,  H01L21/50

    CPC分类号： H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469

    摘要： Disclosed herein is a method of manufacturing a solid-state image pickup element, the method including the steps of forming a plurality of photoelectric conversion elements within a semiconductor substrate; forming a wiring layer via an insulating film on a surface of the semiconductor substrate in which surface the plurality of photoelectric conversion elements are formed; laminating a supporting substrate to a surface of the semiconductor substrate in which surface the wiring layer is formed via an adhesive; applying a pressure to the semiconductor substrate and the supporting substrate in a state of the semiconductor substrate and the supporting substrate being laminated to each other via the adhesive; and curing the adhesive by heating the adhesive to a curing temperature of the adhesive after releasing the applied pressure.

    摘要翻译： 本文公开了一种制造固态图像拾取元件的方法，该方法包括以下步骤：在半导体衬底内形成多个光电转换元件; 在其上形成有多个光电转换元件的表面的半导体衬底的表面上经由绝缘膜形成布线层; 将支撑基板层叠到其上通过粘合剂形成布线层的表面的半导体基板的表面; 在半导体基板和支撑基板的状态下通过粘合剂层压到半导体基板和支撑基板上的压力; 并且在释放施加的压力之后，通过将粘合剂加热至粘合剂的固化温度来固化粘合剂。

    Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof
    9.
    发明申请
    Solid state image pickup device and manufacturing method thereof and semiconductor integrated circuit device and manufacturing method thereof 失效

    公开(公告)号：US20070241416A1

    公开(公告)日：2007-10-18

    申请号：US11808450

    申请日：2007-06-11

    申请人： Masafumi Muramatsu

    发明人： Masafumi Muramatsu

    IPC分类号： H01L27/142 ,  H01L27/00

    CPC分类号： H01L27/14638 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14683

    摘要： A method of manufacturing a solid-state image pickup device comprises a process for forming a plurality of photoelectric conversion elements PD within a semiconductor substrate 4, a process for forming an interconnection portion, having an interconnection layer 8 in an insulating layer 7, on the surface side of the semiconductor substrate 4, a process for forming an adhesive layer, made of a material cured at a temperature lower than a deterioration starting temperature of the interconnection layer 8, on the surface of the interconnection portion and bonding a supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 by heat treatment at a temperature lower than the deterioration starting temperature of the interconnection layer 8 and a process for decreasing a thickness of the semiconductor substrate 4 from the back side. A solid-state image pickup device manufacturing method can bond the supporting substrate 30 to the surface side of the interconnection portion through the adhesive layer 9 without exerting a thermal influence upon the interconnection layer 8 that was previously formed on the surface side of the semiconductor substrate 4.

    Method of manufacturing solid-state image pickup element, and solid-state image pickup element
    10.
    发明授权
    Method of manufacturing solid-state image pickup element, and solid-state image pickup element 失效
    固体摄像元件的制造方法以及固体摄像元件

    公开(公告)号：US07981718B2

    公开(公告)日：2011-07-19

    申请号：US12364254

    申请日：2009-02-02

    申请人： Hideki Kobayashi ,  Masafumi Muramatsu

    发明人： Hideki Kobayashi ,  Masafumi Muramatsu

    IPC分类号： H01L21/58

    CPC分类号： H01L27/14632 ,  H01L27/14634 ,  H01L27/14687 ,  H01L27/1469

    摘要： Disclosed herein is a method of manufacturing a solid-state image pickup element, the method including the steps of forming a plurality of photoelectric conversion elements within a semiconductor substrate; forming a wiring layer via an insulating film on a surface of the semiconductor substrate in which surface the plurality of photoelectric conversion elements are formed; laminating a supporting substrate to a surface of the semiconductor substrate in which surface the wiring layer is formed via an adhesive; applying a pressure to the semiconductor substrate and the supporting substrate in a state of the semiconductor substrate and the supporting substrate being laminated to each other via the adhesive; and curing the adhesive by heating the adhesive to a curing temperature of the adhesive after releasing the applied pressure.

    摘要翻译： 本文公开了一种制造固态图像拾取元件的方法，该方法包括以下步骤：在半导体衬底内形成多个光电转换元件; 在其上形成有多个光电转换元件的表面的半导体衬底的表面上经由绝缘膜形成布线层; 将支撑基板层叠到其上通过粘合剂形成布线层的表面的半导体基板的表面; 在半导体基板和支撑基板的状态下通过粘合剂层压到半导体基板和支撑基板上的压力; 并且在释放施加的压力之后，通过将粘合剂加热至粘合剂的固化温度来固化粘合剂。