摘要:
An endoscope video apparatus has an endoscope including a solid-state image sensor, for outputting an endoscopic image signal, a video processor for processing the image signal supplied from the solid-state image sensor and outputting a video signal, an image file unit for recording the video signal, and an input section for inputting retrieval data corresponding to the video signal recorded in the image file unit. A control section discriminates the presence/absence of retrieval data input from the input section. A control circuit operates an alarm unit by discrimination data representing the absence of retrieval data.
摘要:
An endoscopic photographing apparatus comprises a first frame memory for successively storing the image signals, generated from a solid-state image sensor with every scanning line, in synchronism with drive signals, and a second frame memory for successively storing the image signals, read successively from the first frame memory, by the interlacing method, and delivering the stored image signals to a monitor, in synchronism with television synchronizing signals, for display.
摘要:
Disclosed is a control circuit which is connected to a video endoscope, having a CCD in the distal end thereof. The control circuit supplies driving clock pulses to the CCD, and converts a picture element signal pulses from the CCD into a continuous image signal, by clamping, or sampling and holding, the signal pulses. The converted signals are further subjected to video processing. A scope discrimination resistor is contained in the endoscope, in the vicinity of a connector thereof, which connects the endoscope and the control circuit. The resistance value of the resistor depends on the length of the endoscope. When the endoscope is connected to the control circuit, the resistor is connected in series with a constantcurrent source in a scope discrimination circuit. The discrimination circuit discriminates the scope length by detecting the resistance value of the resistor as a terminal voltage. The waveform of the driving clock pulses for the CCD is modified in accordance with the result of the discrimination, and the timing for clamping, or sampling and holding, the picture-element signal pulses from the CCD (10), is determined by the discrimination result.
摘要:
A method of producing a Pb-free copper-alloy sliding material containing 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, 0.5 to 30.0% of Zn, and 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN may be added.
摘要:
A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.
摘要:
A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.
摘要:
A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.
摘要:
An ink composition for ink jet providing excellent in the curability based on ultraviolet irradiation in the presence of water or a solvent, the ejection stability with respect to the factors such as dot loss or flight deflection, and the storage stability of ink. Also provided herein is an ink composition for ink jet including: a pigment; a water-soluble organic solvent; a surfactant; at least either of a urethane (meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000 and a cross-linked urethane (meth)acrylate having a constitutional unit including the urethane (meth)acrylate; a compound having a radical polymerizable group(s); a photoradical polymerization initiator; and water: A1-O—(CONH—B1—NHCOO—C1—O)n—CONH—B1—NH—COO-D1 (1) where each of A1, B1, C1, D1, and n in formula (1) are described herein.
摘要:
A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.
摘要:
An image forming apparatus includes a sheet feeding device (1). The sheet feeding device (1) includes a sheet feeding cassette (2), a push-up member (4), a drive shaft (5), and a rotation detecting device (6). The rotation detecting device (6) includes an output gear connected to the drive shaft (5). The output gear includes a gear main body provided with a gear tooth on its outer edge; and an electrode holding member that is attached to the gear main body. The electrode holding member is rotatably provided in the case (9) and a rotating electrode is attached to the electrode holding member. The electrode holding member is formed of at least one thermoplastic resin selected from the group consisting of POM, PA, PBT, PP, PE, ABS resin, PS, PPE, PC, and PMMA. The gear main body is formed of a material whose strength is higher than thermoplastic resin of which the electrode holding member is formed.