Control circuit for video endoscope
    3.
    发明授权
    Control circuit for video endoscope 失效
    视频内窥镜控制电路

    公开(公告)号:US4706118A

    公开(公告)日:1987-11-10

    申请号:US914168

    申请日:1986-10-01

    摘要: Disclosed is a control circuit which is connected to a video endoscope, having a CCD in the distal end thereof. The control circuit supplies driving clock pulses to the CCD, and converts a picture element signal pulses from the CCD into a continuous image signal, by clamping, or sampling and holding, the signal pulses. The converted signals are further subjected to video processing. A scope discrimination resistor is contained in the endoscope, in the vicinity of a connector thereof, which connects the endoscope and the control circuit. The resistance value of the resistor depends on the length of the endoscope. When the endoscope is connected to the control circuit, the resistor is connected in series with a constantcurrent source in a scope discrimination circuit. The discrimination circuit discriminates the scope length by detecting the resistance value of the resistor as a terminal voltage. The waveform of the driving clock pulses for the CCD is modified in accordance with the result of the discrimination, and the timing for clamping, or sampling and holding, the picture-element signal pulses from the CCD (10), is determined by the discrimination result.

    摘要翻译: 公开了一种控制电路,其连接到在其远端具有CCD的视频内窥镜。 控制电路向CCD提供驱动时钟脉冲,并将来自CCD的像素信号脉冲转换为连续图像信号,通过钳位或采样和保持信号脉冲。 转换的信号进一步进行视频处理。 在连接内窥镜和控制电路的连接器附近的内窥镜中包含镜片识别电阻。 电阻的电阻值取决于内窥镜的长度。 当内窥镜连接到控制电路时,电阻器与示波器鉴别电路中的恒流源串联。 识别电路通过检测作为端子电压的电阻器的电阻值来区分示波长度。 CCD的驱动时钟脉冲的波形根据鉴别的结果被修改,并且来自CCD(10)的图像元素信号脉冲的钳位或取样和保持的定时由判别 结果。

    Apparatus for and method of heat-treating thin film on surface of substrate
    5.
    发明授权
    Apparatus for and method of heat-treating thin film on surface of substrate 有权
    薄膜表面热处理设备及方法

    公开(公告)号:US08963050B2

    公开(公告)日:2015-02-24

    申请号:US13272657

    申请日:2011-10-13

    摘要: A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.

    摘要翻译: 将其上形成有薄膜的表面的半导体晶片输送到室中并由保持器保持。 在更换室内提供的气氛之后,将闪光灯从光照射部分中的闪光灯朝向半导体晶片引导,以对薄膜进行烘烤处理。 用光照射部分的卤素灯的光照射半导体晶片也是在与闪光的照射的同时开始的。 在非常短的时间内发射的光并且具有高强度的闪光使得薄膜的表面温度瞬间上升。 这防止了由于膜中长时间烘烤而导致的异常晶粒生长的发生。

    Heat treatment method and heat treatment apparatus of thin film
    6.
    发明授权
    Heat treatment method and heat treatment apparatus of thin film 有权
    薄膜的热处理方法和热处理装置

    公开(公告)号:US08852966B2

    公开(公告)日:2014-10-07

    申请号:US13609947

    申请日:2012-09-11

    摘要: A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.

    摘要翻译: 在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。 绝缘栅双极晶体管(IGBT)与电源电路连接到闪光灯,并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下,从而使闪光灯照射时间 为0.01毫秒以上且1毫秒以下。 由于以明显短的闪光照射时间进行闪光热处理,因此能够抑制非晶硅薄膜的过度加热,并且防止了膜的剥离等有害影响。

    Heat treatment method for promoting crystallization of high dielectric constant film
    7.
    发明授权
    Heat treatment method for promoting crystallization of high dielectric constant film 有权
    促进高介电常数膜结晶的热处理方法

    公开(公告)号:US08623750B2

    公开(公告)日:2014-01-07

    申请号:US13607892

    申请日:2012-09-10

    摘要: A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

    摘要翻译: 在硅 - 锗层上形成二氧化硅膜,并且在二氧化硅膜上进一步形成高介电常数膜。 在半导体晶片上进行来自闪光灯的第一次照射,将半导体晶片的正面的温度从预热温度升温至目标温度,时间范围为3毫秒〜1秒。 随后,执行从闪光灯的第二次照射,以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内,持续3毫秒至1秒的时间段。 这促进了高介电常数膜的结晶,同时抑制了硅 - 锗层中的变形的减轻。

    INK COMPOSITION FOR INK JET
    8.
    发明申请
    INK COMPOSITION FOR INK JET 审中-公开
    墨水喷墨墨水组合物

    公开(公告)号:US20120225968A1

    公开(公告)日:2012-09-06

    申请号:US13337581

    申请日:2011-12-27

    IPC分类号: C09D11/10

    摘要: An ink composition for ink jet providing excellent in the curability based on ultraviolet irradiation in the presence of water or a solvent, the ejection stability with respect to the factors such as dot loss or flight deflection, and the storage stability of ink. Also provided herein is an ink composition for ink jet including: a pigment; a water-soluble organic solvent; a surfactant; at least either of a urethane (meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000 and a cross-linked urethane (meth)acrylate having a constitutional unit including the urethane (meth)acrylate; a compound having a radical polymerizable group(s); a photoradical polymerization initiator; and water: A1-O—(CONH—B1—NHCOO—C1—O)n—CONH—B1—NH—COO-D1  (1) where each of A1, B1, C1, D1, and n in formula (1) are described herein.

    摘要翻译: 一种用于喷墨的油墨组合物,其在水或溶剂的存在下,基于紫外线照射提供优异的固化性,相对于诸如点损失或飞行偏转等因素的喷射稳定性以及油墨的储存稳定性。 本文还提供了一种用于喷墨的油墨组合物,包括:颜料; 水溶性有机溶剂; 表面活性剂; 氨基甲酸酯(甲基)丙烯酸酯中的至少一种由以下通式(1)表示并具有1,000至10,000的重均分子量和具有包含氨基甲酸酯(甲基)丙烯酸酯的结构单元的交联的聚氨酯(甲基)丙烯酸酯 )丙烯酸酯; 具有自由基聚合性基团的化合物; 光自由基聚合引发剂; 和水:式(1)中的A1,B1,C1,D1和n各自的A1-O-(CONH-B1-NHCOO-C1-O)n-CONH-B1-NH-COO-D1(1) 在此描述。

    Heat treatment method and heat treatment apparatus for heating substrate by light irradiation
    9.
    发明授权
    Heat treatment method and heat treatment apparatus for heating substrate by light irradiation 有权
    热处理方法和通过光照射加热基板的热处理装置

    公开(公告)号:US08129284B2

    公开(公告)日:2012-03-06

    申请号:US12732591

    申请日:2010-03-26

    申请人: Shinichi Kato

    发明人: Shinichi Kato

    IPC分类号: H01L21/302 H01L21/461

    摘要: A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

    摘要翻译: 在其上注入有杂质的硅衬底的表面上形成碳薄膜的半导体晶片被从闪光灯发射的闪光照射。 吸收闪光灯会导致碳薄膜的温度升高。 因此,注入杂质的硅衬底的表面温度增加到高于不形成薄膜的情况下的表面温度,并且可以降低薄层电阻值。 当在其上形成有碳薄膜的半导体晶片用高浓度氧气氛中的闪光照射时,由于薄膜的碳被氧化以汽化,所以与闪光加热同时进行薄膜的去除。

    ROTATION DETECTING DEVICE, SHEET FEEDING DEVICE, AND IMAGE FORMING APPARATUS
    10.
    发明申请
    ROTATION DETECTING DEVICE, SHEET FEEDING DEVICE, AND IMAGE FORMING APPARATUS 有权
    旋转检测装置,进纸装置和图像形成装置

    公开(公告)号:US20110176819A1

    公开(公告)日:2011-07-21

    申请号:US13008490

    申请日:2011-01-18

    IPC分类号: G03G15/22 B65H7/02 G01L3/02

    摘要: An image forming apparatus includes a sheet feeding device (1). The sheet feeding device (1) includes a sheet feeding cassette (2), a push-up member (4), a drive shaft (5), and a rotation detecting device (6). The rotation detecting device (6) includes an output gear connected to the drive shaft (5). The output gear includes a gear main body provided with a gear tooth on its outer edge; and an electrode holding member that is attached to the gear main body. The electrode holding member is rotatably provided in the case (9) and a rotating electrode is attached to the electrode holding member. The electrode holding member is formed of at least one thermoplastic resin selected from the group consisting of POM, PA, PBT, PP, PE, ABS resin, PS, PPE, PC, and PMMA. The gear main body is formed of a material whose strength is higher than thermoplastic resin of which the electrode holding member is formed.

    摘要翻译: 图像形成装置包括片材进给装置(1)。 送纸装置(1)包括送纸盒(2),上推构件(4),驱动轴(5)和旋转检测装置(6)。 旋转检测装置(6)包括连接到驱动轴(5)的输出齿轮。 输出齿轮包括在其外缘上设有齿轮齿的齿轮主体; 以及安装在齿轮主体上的电极保持部件。 电极保持构件可旋转地设置在壳体(9)中,并且旋转电极附接到电极保持构件。 电极保持构件由选自POM,PA,PBT,PP,PE,ABS树脂,PS,PPE,PC和PMMA中的至少一种热塑性树脂形成。 齿轮主体由强度比形成有电极保持部件的热塑性树脂高的材料形成。