摘要:
A barrier film which can effectively protect an organic EL device, an efficient method for producing the barrier film, and a light-emitting display exhibiting excellent durability in which a non-emission area such as the dark spot occurs to only a small extent are provided. A method for producing a barrier film for light-emitting displays including a glass material containing three or more components, the barrier film being formed by a vapor deposition method. A light-emitting display including a supporting substrate 1, an emitting layer 2, and the barrier film 3 produced by the method. The barrier film can be produced with a target containing 50 to 90 wt % of silicon oxide, 5 to 20 wt % of boron oxide and 1 to 10 wt % of aluminum oxide by sputtering method.
摘要:
An organic EL display including an organic EL device 2 and a barrier film 3 which seals the organic EL device 2 and includes a conductive film. An organic EL display including an organic EL device, a color conversion layer, and a barrier film which seals the color conversion layer and includes a conductive film. An organic EL display including an organic EL device 2 and a barrier film 3 which seals the organic EL device 2 and includes a stress reducing layer 3b.
摘要:
An organic electroluminescent device (1) including: a transparent electrode (12); a counter electrode (14) opposite to the transparent electrode (12); and one or more multilayered structures between the transparent electrode (12) and the counter electrode (14), the structure including two organic emitting layers (20) and (22) and an intermediate conductive layer (30) between the organic emitting layers (20) and (22), the refractive index na of the intermediate conductive layer (30) being different from the refractive index nb of at least one of the organic emitting layers by 0.25 or less, the intermediate conductive layer (30) containing an oxide containing one or more types of rare earth elements.
摘要:
A sintered body for vacuum vapor deposition, the sintered body being a sintered body of an oxide containing at least one cation element; the cation element having an electronegativity of 1.5 or more; and the sintered body having a surface roughness of 3 μm or less and a bulk resistance of less than 1×10−1 Ω·cm.
摘要:
To provide a thin film transistor having an indium oxide-based semiconductor film which allows only a thin metal film on the semiconductor film to be selectively etched. A thin film transistor having a crystalline indium oxide semiconductor film which is composed mainly of indium oxide and contains a positive trivalent metal oxide.
摘要:
An amorphous oxide thin film containing amorphous oxide is exposed to an oxygen plasma generated by exciting an oxygen-containing gas in high frequency. The oxygen plasma is preferably generated under the condition that applied frequency is 1 kHz or more and 300 MHz or less and pressure is 5 Pa or more. The amorphous oxide thin film is preferably exposed by a sputtering method, ion-plating method, vacuum deposition method, sol-gel method or fine particle application method.
摘要:
Provided are thin film transistor substrates, thin film transistor liquid crystal displays, thin film transistors, TFT substrates for liquid crystal displays, liquid crystal displays provided with TFT substrates and liquid crystals, pixel electrodes for driving a liquid crystals, and transparent electrodes, an processes for the preparation thereof.
摘要:
Disclosed is a sputtering target that can suppress the occurrence of anomalous discharge in the formation of an oxide semiconductor film by sputtering method and can continuously and stably form a film. Also disclosed is an oxide for a sputtering target that has a rare earth oxide C-type crystal structure and has a surface free from white spots (a poor appearance such as concaves and convexes formed on the surface of the sputtering target). Further disclosed is an oxide sintered compact that has a bixbyite structure and contains indium oxide, gallium oxide, and zinc oxide. The composition amounts (atomic %) of indium (In), gallium (Ga), and zinc (Zn) fall within a composition range satisfying the following formula: In/(In+Ga+Zn)
摘要翻译:公开了一种溅射靶,其可以通过溅射法抑制氧化物半导体膜形成中的异常放电的发生,并且可以连续且稳定地形成膜。 还公开了具有稀土氧化物C型晶体结构并具有没有白点的表面(在溅射靶的表面上形成的凹凸等差的外观)的溅射靶的氧化物。 进一步公开了具有双相结构并含有氧化铟,氧化镓和氧化锌的氧化物烧结体。 铟(In),镓(Ga)和锌(Zn)的成分量(原子%)落在满足下式的组成范围内:In /(In + Ga + Zn)<0.75。
摘要:
A field effect transistor including a semiconductor layer including a composite oxide which contains In, Zn, and one or more elements X selected from the group consisting of Zr, Hf, Ge, Si, Ti, Mn, W, Mo, V, Cu, Ni, Co, Fe, Cr, Nb, Al, B, Sc, Y and lanthanoids in the following atomic ratios (1) to (3): In/(In+Zn)=0.2 to 0.8 (1) In/(In+X)=0.29 to 0.99 (2) Zn/(X+Zn)=0.29 to 0.99 (3).
摘要:
A thin film transistor including a gate electrode, a gate-insulating film, an oxide semiconductor film in contact with the gate-insulating film, and source and drain electrodes which connect to the oxide semiconductor film and are separated with a channel part therebetween, wherein the oxide semiconductor film comprises a crystalline indium oxide which includes hydrogen element, and the content of the hydrogen element contained in the oxide semiconductor film is 0.1 at % to 5 at % relative to all elements which form the oxide semiconductor film.