公开(公告)号：US06528468B2

公开(公告)日：2003-03-04

申请号：US09726420

申请日：2000-12-01

申请人： Masahiko Matsukawa ,  Kentaro Saito ,  Toshio Inbe ,  Kasuyoshi Yamasoe

发明人： Masahiko Matsukawa ,  Kentaro Saito ,  Toshio Inbe ,  Kasuyoshi Yamasoe

IPC分类号： C11D708

CPC分类号： F28F19/02 ,  C23C22/78 ,  C23G1/125

摘要： The present invention relates to a pickling agent for the chemical conversion coating of a heat exchanger which is capable of cleaning the complicated structure comprising fins and tubes of a heat exchanger in preparation for the successful formation of a chemical conversion film, a method of pickling a heat exchanger, a method of treating a heat exchanger comprising said pickling method, and a heat exchanger produced by using said treating method. The present invention provides pickling agent for the chemical conversion coating of a heat exchanger which comprises an acidic aqueous solution containing nitric acid and/or sulfuric acid and at least one metal and/or metal oxoanion salt derived from any metal selected from the group consisting of iron, nickel, cobalt, molybdenum and cerium.

摘要翻译： 本发明涉及一种热交换器的化学转化涂层的酸洗剂，其能够清洁包括热交换器的翅片和管的复杂结构，以准备成功地形成化学转化膜，酸洗方法 热交换器，处理包括所述酸洗方法的热交换器的方法和使用所述处理方法制造的热交换器。本发明提供一种用于热交换器的化学转化涂层的酸洗剂，其包含含有硝酸的酸性水溶液和/ 或硫酸以及衍生自选自铁，镍，钴，钼和铈的任何金属的至少一种金属和/或金属氧代阴离子盐。

公开(公告)号：US07863670B2

公开(公告)日：2011-01-04

申请号：US12490147

申请日：2009-06-23

申请人： Yasushi Ishii ,  Takashi Hashimoto ,  Yoshiyuki Kawashima ,  Koichi Toba ,  Satoru Machida ,  Kozo Katayama ,  Kentaro Saito ,  Toshikazu Matsui

发明人： Yasushi Ishii ,  Takashi Hashimoto ,  Yoshiyuki Kawashima ,  Koichi Toba ,  Satoru Machida ,  Kozo Katayama ,  Kentaro Saito ,  Toshikazu Matsui

IPC分类号： H01L29/792

CPC分类号： H01L27/115 ,  H01L21/823462 ,  H01L27/0629 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L29/6653

摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.

摘要翻译： 在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。 控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于 存储器栅极的栅极长度大于1.控制栅极和栅电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是形成的单层结构 同时作为控制栅极的电极材料膜8A。

公开(公告)号：US07745288B2

公开(公告)日：2010-06-29

申请号：US11717053

申请日：2007-03-13

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L21/336

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7885

摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

摘要翻译： 公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。 非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。 第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。 在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

公开(公告)号：US20070262382A1

公开(公告)日：2007-11-15

申请号：US11727591

申请日：2007-03-27

申请人： Yasushi Ishii ,  Takashi Hashimoto ,  Yoshiyuki Kawashima ,  Koichi Toba ,  Satoru Machida ,  Kozo Katayama ,  Kentaro Saito ,  Toshikazu Matsui

发明人： Yasushi Ishii ,  Takashi Hashimoto ,  Yoshiyuki Kawashima ,  Koichi Toba ,  Satoru Machida ,  Kozo Katayama ,  Kentaro Saito ,  Toshikazu Matsui

IPC分类号： H01L27/12 ,  H01L27/01 ,  H01L31/0392 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L21/823462 ,  H01L27/0629 ,  H01L27/0922 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/11568 ,  H01L29/6653

摘要： In a semiconductor device which includes a split-gate type memory cell having a control gate and a memory gate, a low withstand voltage MISFET and a high withstand voltage MISFET, variations of the threshold voltage of the memory cell are suppressed. A gate insulating film of a control gate is thinner than a gate insulating film of a high withstand voltage MISFET, the control gate is thicker than a gate electrode 14 of the low withstand voltage MISFET and the ratio of thickness of a memory gate with respect to the gate length of the memory gate is larger than 1. The control gate and a gate electrode 15 are formed in a multilayer structure including an electrode material film 8A and an electrode material layer 8B, and the gate electrode 14 is a single layer structure formed at the same time as the electrode material film 8A of the control gate.

摘要翻译： 在包括具有控制栅极和存储器栅极的分离栅极型存储单元，低耐压MISFET和高耐压MISFET的半导体器件中，抑制了存储单元的阈值电压的变化。 控制栅极的栅极绝缘膜比高耐压MISFET的栅极绝缘膜薄，控制栅极比低耐压MISFET的栅电极14厚，存储栅的厚度比相对于 存储器栅极的栅极长度大于1.控制栅极和栅极电极15形成为包括电极材料膜8A和电极材料层8B的多层结构，并且栅电极14是单层 结构与控制门的电极材料膜8A同时形成。

公开(公告)号：US07130559B2

公开(公告)日：2006-10-31

申请号：US10995988

申请日：2004-11-22

申请人： Hiroyuki Kimura ,  Masao Hayashi ,  Yoichi Takaragi ,  Kentaro Saito ,  Hiroshi Kaburagi ,  Toshikazu Sekizawa ,  Akio Ito

发明人： Hiroyuki Kimura ,  Masao Hayashi ,  Yoichi Takaragi ,  Kentaro Saito ,  Hiroshi Kaburagi ,  Toshikazu Sekizawa ,  Akio Ito

IPC分类号： G03G15/00

CPC分类号： G03G15/553 ,  G03G15/55 ,  G03G21/181 ,  G03G21/1878 ,  G03G2215/00987

摘要： A recycling system for managing reusable units to be used in an image-forming apparatus (e.g., MFP device including units, the system comprising inputting kind information of the units), storing use information corresponding to the image-forming apparatus, and determining a reuse level of a reusable unit to be provided based on the kind information and the use information.

摘要翻译： 一种用于管理图像形成装置中使用的可复用单元的回收系统（例如，包括单元的MFP设备，包括输入单元的种类信息的系统），存储与图像形成装置相对应的使用信息，以及确定再利用 基于种类信息和使用信息提供的可重复使用单元的级别。

公开(公告)号：US20050117918A1

公开(公告)日：2005-06-02

申请号：US10995988

申请日：2004-11-22

申请人： Hiroyuki Kimura ,  Masao Hayashi ,  Yoichi Takaragi ,  Kentaro Saito ,  Hiroshi Kaburagi ,  Toshikazu Sekizawa ,  Akio Ito

发明人： Hiroyuki Kimura ,  Masao Hayashi ,  Yoichi Takaragi ,  Kentaro Saito ,  Hiroshi Kaburagi ,  Toshikazu Sekizawa ,  Akio Ito

IPC分类号： G03G21/00 ,  B41J29/38 ,  G03G15/00 ,  G03G21/18 ,  G06Q50/00 ,  G06Q50/04 ,  G06Q50/10

CPC分类号： G03G15/553 ,  G03G15/55 ,  G03G21/181 ,  G03G21/1878 ,  G03G2215/00987

摘要： A recycling system for managing reusable units to be used in an image-forming apparatus (e.g., MFP device including units, the system comprising inputting kind information of the units, storing use information corresponding to the image-forming apparatus, and determining a reuse level of a reusable unit to be provided based on the kind information and the use information.

摘要翻译： 一种用于管理图像形成装置中使用的可复用单元的回收系统（例如，包括单元的MFP设备，该系统包括输入单元的种类信息，存储与图像形成装置相对应的使用信息，以及确定重用级别 基于种类信息和使用信息来提供可重复使用单元。

公开(公告)号：US09159843B2

公开(公告)日：2015-10-13

申请号：US13476356

申请日：2012-05-21

申请人： Kentaro Saito ,  Kazumasa Yanagisawa ,  Yasushi Ishii ,  Koichi Toba

发明人： Kentaro Saito ,  Kazumasa Yanagisawa ,  Yasushi Ishii ,  Koichi Toba

IPC分类号： H01L29/778 ,  H01L21/336 ,  H01L29/792 ,  H01L21/28 ,  H01L27/115 ,  H01L29/423 ,  H01L29/66 ,  G11C16/04

CPC分类号： H01L29/792 ,  G11C16/0466 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/4234 ,  H01L29/66833

摘要： To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.

摘要翻译： 提高半导体器件的电气性能和可靠性。 分闸式非易失性存储器的存储栅极是由金属膜6a上的金属膜6a和硅膜6b的叠层膜形成的金属栅电极。 在金属膜6a的上端部分，通过氧化金属膜6a的一部分而形成金属氧化物部分17。 分闸式非易失性存储器的控制栅电极是由金属膜4a的叠层膜和金属膜4a上的硅膜4b形成的金属栅电极。

公开(公告)号：US08530958B2

公开(公告)日：2013-09-10

申请号：US12718002

申请日：2010-03-05

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L29/792

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7885

摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

摘要翻译： 公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。 非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。 第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。 在存储单元中用于源极的n +型半导体区域的上表面上形成硅化物层，其存储栅极电极MG侧的端部由第二侧壁限定。

公开(公告)号：US20070228446A1

公开(公告)日：2007-10-04

申请号：US11717053

申请日：2007-03-13

申请人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

发明人： Koichi Toba ,  Yasushi Ishii ,  Yoshiyuki Kawashima ,  Satoru Machida ,  Munekatsu Nakagawa ,  Kentaro Saito ,  Toshikazu Matsui ,  Takashi Hashimoto ,  Kosuke Okuyama

IPC分类号： H01L29/76

CPC分类号： H01L29/42324 ,  H01L21/28273 ,  H01L21/28282 ,  H01L27/115 ,  H01L27/11526 ,  H01L27/11531 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7885

摘要： A semiconductor device having a non-volatile memory is disclosed, whose disturb defect can be diminished or prevented. A memory cell of the non-volatile memory has a memory gate electrode formed over a main surface of a semiconductor substrate through an insulating film for charge storage. A first side wall is formed on a side face of the memory gate electrode, and at a side face of the first side wall, a second side wall is formed. On an upper surface of an n+-type semiconductor region for source in the memory cell there is formed a silicide layer whose end portion on the memory gate electrode MG side is defined by the second side wall.

摘要翻译： 公开了一种具有非易失性存储器的半导体器件，其干扰缺陷可被减弱或防止。 非易失性存储器的存储单元具有通过用于电荷存储的绝缘膜形成在半导体衬底的主表面上的存储栅电极。 第一侧壁形成在存储栅电极的侧面上，在第一侧壁的侧面形成有第二侧壁。 在存储单元中用于源极的n + + / - 型半导体区域的上表面上形成硅化物层，其存储栅电极MG侧的端部由第二侧壁限定。

公开(公告)号：US20120188705A1

公开(公告)日：2012-07-26

申请号：US13356961

申请日：2012-01-24

申请人： Tsuyoshi Ozeki ,  Kentaro Saito

发明人： Tsuyoshi Ozeki ,  Kentaro Saito

IPC分类号： G06F1/16

CPC分类号： G06F1/187

摘要： A case arranged to contain a disk storage apparatus. The case includes a case wall including a case inner flat face that extends along a outer flat face of the disk storage apparatus when the disk storage apparatus is contained in the case, and a deformable plate disposed between the outer flat face and the case inner flat face and that extends along the case inner flat face when the disk storage apparatus is contained in the case.

摘要翻译： 一种被配置为容纳盘存储装置的壳体。 壳体包括壳体，其包括当盘存储装置容纳在壳体中时沿着盘存储装置的外平面延伸的壳体内平面;以及设置在外平坦面和壳体内平面之间的可变形板 并且当盘存储装置被包含在壳体中时沿壳体内平面延伸。