公开(公告)号：US06451674B1

公开(公告)日：2002-09-17

申请号：US09243797

申请日：1999-02-03

申请人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01L21425

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

摘要： A method for introducing an impurity includes the steps of: introducing an impurity having charges into a target to be processed, such as a semiconductor substrate and a film formed on a substrate; and supplying electrons from a filament into the target to neutralize the charges of the impurity. The step of supplying electrons includes a step of controlling the maximum energy of the electrons supplied at a predetermined energy or less.

摘要翻译： 引入杂质的方法包括以下步骤：将具有电荷的杂质引入诸如半导体衬底的被处理靶和形成在衬底上的膜; 并将电子从灯丝提供到靶中以中和杂质的电荷。 提供电子的步骤包括控制以预定能量或更少能量供应的电子的最大能量的步骤。

公开(公告)号：US06633047B2

公开(公告)日：2003-10-14

申请号：US10184939

申请日：2002-07-01

申请人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Hiroko Kubo ,  Kenji Yoneda

IPC分类号： H01J37317

CPC分类号： H01L21/265 ,  H01J37/3171 ,  H01J2237/004 ,  H01J2237/31701 ,  H01L21/26513

摘要： An impurity introducing apparatus of the present invention includes: a system for introducing an impurity having charges into a target to be processed, the target being a semiconductor substrate or a film formed on the substrate; a system for supplying electrons into the target, the electrons canceling the charges of the impurity; and a system for controlling the maximum energy of the electrons supplied by the electron supply system at a predetermined value or less.

摘要翻译： 本发明的杂质导入装置包括：将具有电荷的杂质引入被处理对象物，所述靶为半导体基板或形成在所述基板上的膜的系统; 用于向目标物质供给电子的系统，电子消除杂质的电荷; 以及用于控制由电子供给系统提供的电子的最大能量以预定值或更小的系统。

公开(公告)号：US07291535B2

公开(公告)日：2007-11-06

申请号：US11000209

申请日：2004-12-01

申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

IPC分类号： H01L21/336

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side, forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region. In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧蚀刻去除形成的第一绝缘膜，从第一绝缘膜形成覆盖栅电极的侧表面的第一侧壁; 并且通过使用能够一体地处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区。 在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。

公开(公告)号：US20060163498A1

公开(公告)日：2006-07-27

申请号：US11204050

申请日：2005-08-16

申请人： Kenji Yoneda ,  Masahiko Niwayama

发明人： Kenji Yoneda ,  Masahiko Niwayama

IPC分类号： H01L21/265 ,  H01J37/317

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/0044 ,  H01J2237/043

摘要： Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

公开(公告)号：US08058631B2

公开(公告)日：2011-11-15

申请号：US12637272

申请日：2009-12-14

申请人： Masahiko Niwayama ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Kenji Yoneda

IPC分类号： G01K1/08 ,  H01J3/26

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01L21/28035

摘要： A semiconductor manufacturing includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

摘要翻译： 半导体制造包括：离子源和用于将离子束引入到晶片之间的绝缘膜之间形成的靶膜的离子束; 用于向目标膜提供用于中和离子束中的电荷的电子的洪水枪; 旋转盘，用于对目标膜进行离子束的机械扫描，所述两个方向由r-和tt组成; 方向; 用于测量由离子束产生的电流密度的后法拉第笼; 盘转速控制器和用于改变目标膜的扫描速度的盘扫描速度控制器; 以及用于根据电流密度控制目标膜的扫描速度的束电流/电流密度测量仪器。

公开(公告)号：US20100093113A1

公开(公告)日：2010-04-15

申请号：US12637272

申请日：2009-12-14

申请人： Masahiko Niwayama ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Kenji Yoneda

IPC分类号： H01L21/66

CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J37/304 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01L21/28035

摘要： A semiconductor manufacturing apparatus includes: an ion source and a beam line for introducing an ion beam into a target film which is formed over a wafer with an insulating film interposed therebetween; a flood gun for supplying the target film with electrons for neutralizing charges contained in the ion beam; a rotating disk for subjecting the target film to mechanical scanning of the ion beam in two directions composed of r-θ directions; a rear Faraday cage for measuring the current density produced by the ion beam; a disk-rotational-speed controller and a disk-scanning-speed controller for changing the scanning speed of the target film; and a beam current/current density measuring instrument for controlling, according to the current density, the scanning speed of the target film.

摘要翻译： 一种半导体制造装置，包括：离子源和用于将离子束引入到晶片之间的绝缘膜之间形成的靶膜的离子束; 用于向目标膜提供用于中和离子束中的电荷的电子的洪水枪; 旋转盘，用于对目标膜进行离子束的机械扫描，所述两个方向由r-和tt组成; 方向; 用于测量由离子束产生的电流密度的后法拉第笼; 盘转速控制器和用于改变目标膜的扫描速度的盘扫描速度控制器; 以及用于根据电流密度控制目标膜的扫描速度的束电流/电流密度测量仪器。

公开(公告)号：US20050266649A1

公开(公告)日：2005-12-01

申请号：US11097140

申请日：2005-04-04

申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

IPC分类号： H01L21/683 ,  H01L21/00 ,  H01L21/26 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/68735 ,  H01L21/67098 ,  H01L21/67265

摘要： An electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate, a sensor which obtains the position of the substrate and a position correcting mechanism which corrects the position of the substrate. Or alternatively, an electronic device manufacturing apparatus is provided with a support which includes a shelf for supporting a substrate and the shelf includes a substrate support plane which forms an angle of 22° or more to 90° or less with a horizontal plane.

摘要翻译： 一种电子装置制造装置，具有支撑体，该支撑体包括用于支撑基板的搁架，获得基板的位置的传感器和校正基板的位置的位置校正机构。 或者，电子装置制造装置设置有支撑体，该支撑体包括用于支撑基板的搁架，并且搁板包括与水平面形成22°以上至90°以下的角度的基板支撑面。

公开(公告)号：US06875623B2

公开(公告)日：2005-04-05

申请号：US10602918

申请日：2003-06-25

申请人： Masahiko Niwayama ,  Kenji Yoneda

发明人： Masahiko Niwayama ,  Kenji Yoneda

IPC分类号： H01L21/265 ,  H01L21/26 ,  H01L21/268 ,  H01L21/324 ,  H01L31/26 ,  H01L21/66

CPC分类号： H01L21/324 ,  H01L21/2686

摘要： In the step of thermally processing a semiconductor substrate by irradiating the semiconductor substrate with lamp light, a free carrier absorption layer for absorbing the irradiated lamp light is provided in advance in the semiconductor substrate. Thus, it is possible to increase the temperature controllability in a low temperature range during an RTP process, and to reduce, at a low cost, variations in the substrate temperature not only in a low temperature range but also in a processing temperature range. As a result, semiconductor devices that require precise thermal processing can be fabricated without degrading the characteristics of the resulting semiconductor devices.

摘要翻译： 在通过用灯光照射半导体衬底热处理半导体衬底的步骤中，预先在半导体衬底中提供用于吸收照射的灯光的自由载流子吸收层。 因此，可以在RTP工艺期间提高在低温范围内的温度可控性，并且以低成本降低衬底温度的变化，不仅在低温范围内而且在处理温度范围内。 结果，可以制造需要精确热处理的半导体器件，而不降低所得半导体器件的特性。

公开(公告)号：US07638782B2

公开(公告)日：2009-12-29

申请号：US11204050

申请日：2005-08-16

申请人： Kenji Yoneda ,  Masahiko Niwayama

发明人： Kenji Yoneda ,  Masahiko Niwayama

IPC分类号： G01K1/08 ,  H01J3/14 ,  H01J3/26

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J2237/0044 ,  H01J2237/043

摘要： Impurity ions are implanted into a semiconductor wafer of which a capacitor insulting film is formed on a principal face. In this impurity ion implantation step, the impurity ions are implanted into the semiconductor wafer in the form of a pulsed beam that repeats ON-OFF operation intermittently.

摘要翻译： 将杂质离子注入到在主面上形成电容器绝缘膜的半导体晶片中。 在这种杂质离子注入步骤中，杂质离子以间断地重复开 - 关操作的脉冲束的形式注入半导体晶片。

公开(公告)号：US20050130382A1

公开(公告)日：2005-06-16

申请号：US11000209

申请日：2004-12-01

申请人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

发明人： Masahiko Niwayama ,  Kenji Yoneda ,  Kazuma Takahashi

IPC分类号： H01L21/265 ,  C23C16/00 ,  H01L21/336 ,  H01L21/8238 ,  H01L29/04 ,  H01L29/78

CPC分类号： H01L29/6659 ,  H01L21/26513 ,  H01L21/26586 ,  H01L29/045 ,  H01L29/6656 ,  H01L29/7833

摘要： A method for fabricating a semiconductor device includes the steps of: forming a semiconductor region of a first conductive type on a semiconductor wafer; forming a gate electrode on the semiconductor region; on the semiconductor region, forming a first insulating film over the whole surface including the upper surface of the gate electrode; by removing the formed first insulating film through etching from the top surface side; forming first sidewalls, covering the side surfaces of the gate electrode, from the first insulating film; and by implanting first impurity ions of a second conductive type to the semiconductor region by using an ion implantation device capable of processing a plurality of semiconductor wafers collectively, forming first impurity diffusion regions on both sides of the gate electrode in the semiconductor region; In the step of forming the first impurity diffusion regions, implantation of the first impurity ions are dividedly performed a plurality of times, and the semiconductor wafer is rotated in its wafer surface for each ion implantation.

摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体晶片上形成第一导电类型的半导体区域; 在所述半导体区域上形成栅电极; 在所述半导体区域上，在包括所述栅电极的上表面的整个表面上形成第一绝缘膜; 通过从上表面侧的蚀刻去除形成的第一绝缘膜; 从所述第一绝缘膜形成覆盖所述栅电极的侧表面的第一侧壁; 并且通过使用能够共同处理多个半导体晶片的离子注入装置将第二导电类型的第一杂质离子注入半导体区域，在半导体区域中的栅电极的两侧形成第一杂质扩散区; 在形成第一杂质扩散区域的步骤中，分散地进行第一杂质离子的注入多次，并且半导体晶片在其晶片表面中进行每次离子注入。