-
1.发明授权公开(公告)号：US06262452B1
公开(公告)日：2001-07-17
申请号：US09160134
申请日：1998-09-25
申请人： Masahiro Ono , Takashige Ogata , Toshiharu Oya , Masurao Yoshii
发明人： Masahiro Ono , Takashige Ogata , Toshiharu Oya , Masurao Yoshii
IPC分类号： H01L29788
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42324
摘要： It is an object to increase the number of rewriting timing permitted for a split-gate-type nonvolatile semiconductor memory device. Ends S of floating gate 4 are disposed in inclined portions of LOCOS oxide films 2A and 2B so as to sharpen projections of the floating gate to have an angle B.
摘要翻译： 本发明的目的是增加分离栅型非易失性半导体存储器件允许的重写时序数量。 浮置栅极4的端部S设置在LOCOS氧化物膜2A和2B的倾斜部分中，以便将浮动栅极的突起锐化成具有角度B.
-
2.发明授权Semiconductor module, method of manufacturing semiconductor module, and mobile device 有权半导体模块，制造半导体模块的方法和移动设备公开(公告)号：US07855452B2
公开(公告)日：2010-12-21
申请号：US12022865
申请日：2008-01-30
申请人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
发明人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/525 , H01L24/94 , H01L2221/6834 , H01L2221/68359 , H01L2224/0231 , H01L2224/02319 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/131 , H01L2224/13147 , H01L2224/274 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area.The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
摘要翻译： 在半导体模块中的半导体衬底的安装表面（特别是其外周）上形成用于半导体器件的电极。 为了确保电极之间的大间隙，在电极上形成绝缘层。 还形成有穿过绝缘层并连接到电极的多个凸块，以及与凸块一体形成的重新布线图案。 重新布线图案包括凸起区域和与凸起区域相邻延伸的布线区域。 绝缘层形成为具有在凸起之间的间隔中的凹的上表面，并且重新布线图案的布线区域形成为适合该上表面。 重布线图案的布线区域相对于重新布线图案的凸起区域形成为朝向半导体基板压下。
-
3.发明授权Semiconductor module, method of manufacturing semiconductor module, and mobile device 有权半导体模块，制造半导体模块的方法和移动设备公开(公告)号：US08338946B2
公开(公告)日：2012-12-25
申请号：US12961171
申请日：2010-12-06
申请人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
发明人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/525 , H01L24/94 , H01L2221/6834 , H01L2221/68359 , H01L2224/0231 , H01L2224/02319 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/131 , H01L2224/13147 , H01L2224/274 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
摘要翻译： 在半导体模块中的半导体衬底的安装表面（特别是其外周）上形成用于半导体器件的电极。 为了确保电极之间的大间隙，在电极上形成绝缘层。 还形成有穿过绝缘层并连接到电极的多个凸块，以及与凸块一体形成的重新布线图案。 重新布线图案包括凸起区域和与凸起区域相邻延伸的布线区域。 绝缘层形成为具有在凸起之间的间隔中的凹的上表面，并且重新布线图案的布线区域形成为适合该上表面。 重布线图案的布线区域相对于重新布线图案的凸起区域形成为朝向半导体基板压下。
-
4.发明申请SEMICONDUCTOR MODULE, METHOD OF MANUFACTURING SEMICONDUCTOR MODULE, AND MOBILE DEVICE 有权半导体模块，制造半导体模块的方法和移动设备公开(公告)号：US20080217769A1
公开(公告)日：2008-09-11
申请号：US12022865
申请日：2008-01-30
申请人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
发明人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/525 , H01L24/94 , H01L2221/6834 , H01L2221/68359 , H01L2224/0231 , H01L2224/02319 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/131 , H01L2224/13147 , H01L2224/274 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area.The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
摘要翻译： 在半导体模块中的半导体衬底的安装表面（特别是其外周）上形成用于半导体器件的电极。 为了确保电极之间的大间隙，在电极上形成绝缘层。 还形成有穿过绝缘层并连接到电极的多个凸块，以及与凸块一体形成的重新布线图案。 重新布线图案包括凸起区域和与凸起区域相邻延伸的布线区域。 绝缘层形成为具有在凸起之间的间隔中的凹的上表面，并且重新布线图案的布线区域形成为适合该上表面。 重布线图案的布线区域相对于重新布线图案的凸起区域形成为朝向半导体基板压下。
-
5.发明申请SEMICONDUCTOR MODULE, METHOD OF MANUFACTURING SEMICONDUCTOR MODULE, AND MOBILE DEVICE 有权半导体模块，制造半导体模块的方法和移动设备公开(公告)号：US20110074025A1
公开(公告)日：2011-03-31
申请号：US12961171
申请日：2010-12-06
申请人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
发明人： Yasuyuki Yanase , Yoshio Okayama , Kiyoshi Shibata , Yasunori Inoue , Hideki Mizuhara , Ryosuke Usui , Tetsuya Yamamoto , Masurao Yoshii
IPC分类号： H01L23/482 , H01L23/52
CPC分类号： H01L24/11 , H01L23/3114 , H01L23/525 , H01L24/94 , H01L2221/6834 , H01L2221/68359 , H01L2224/0231 , H01L2224/02319 , H01L2224/0401 , H01L2224/05124 , H01L2224/05147 , H01L2224/05166 , H01L2224/05181 , H01L2224/05647 , H01L2224/1132 , H01L2224/114 , H01L2224/116 , H01L2224/131 , H01L2224/13147 , H01L2224/274 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01057 , H01L2924/01059 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/351 , H01L2224/13099 , H01L2924/00 , H01L2924/00014
摘要： An electrode for a semiconductor device is formed on the mounting surface (particularly, the outer periphery thereof) of a semiconductor substrate in a semiconductor module. In order to secure a large gap between the electrodes, an insulating layer is formed on the electrode. Also formed are a plurality of bumps penetrating the insulating layer and connected to the electrode, and a rewiring pattern integrally formed with the bumps. The rewiring pattern includes a bump area and a wiring area extending contiguously with the bump area. The insulating layer is formed to have a concave upper surface in an interval between the bumps, and the wiring area of the rewiring pattern is formed to fit that upper surface. The wiring area of the rewiring pattern is formed to be depressed toward the semiconductor substrate in relation to the bump area of the rewiring pattern.
摘要翻译： 在半导体模块中的半导体衬底的安装表面（特别是其外周）上形成用于半导体器件的电极。 为了确保电极之间的大间隙，在电极上形成绝缘层。 还形成有穿过绝缘层并连接到电极的多个凸块，以及与凸块一体形成的重新布线图案。 重新布线图案包括凸起区域和与凸起区域相邻延伸的布线区域。 绝缘层形成为具有在凸起之间的间隔中的凹的上表面，并且重新布线图案的布线区域形成为适合该上表面。 重布线图案的布线区域相对于重新布线图案的凸起区域形成为朝向半导体基板压下。
-
-
-
-
搜索结果
5 条记录 (耗时 0.02 秒)
