Surface processing method for mounting stage
    1.
    发明授权
    Surface processing method for mounting stage 有权
    表面处理方法安装阶段

    公开(公告)号:US08343372B2

    公开(公告)日:2013-01-01

    申请号:US12057975

    申请日:2008-03-28

    IPC分类号: B29C61/04 H05H1/00

    CPC分类号: H01L21/67103 H01L21/6875

    摘要: A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.

    摘要翻译: 一种用于安装台的表面处理方法,其能够在节省时间和精力的同时形成符合基板的安装表面。 基板安装在安装台的安装表面上,该安装台设置在基板处理设备的容纳室中,该基板处理设备在基板上执行等离子体处理。 安装的基板被热膨胀。

    SURFACE PROCESSING METHOD FOR MOUNTING STAGE
    2.
    发明申请
    SURFACE PROCESSING METHOD FOR MOUNTING STAGE 有权
    安装阶段的表面处理方法

    公开(公告)号:US20080237030A1

    公开(公告)日:2008-10-02

    申请号:US12057975

    申请日:2008-03-28

    IPC分类号: B29C61/04 H05H1/00

    CPC分类号: H01L21/67103 H01L21/6875

    摘要: A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.

    摘要翻译: 一种用于安装台的表面处理方法,其能够在节省时间和精力的同时形成符合基板的安装表面。 基板安装在安装台的安装表面上,该安装台设置在基板处理设备的容纳室中,该基板处理设备在基板上执行等离子体处理。 安装的基板被热膨胀。

    SURFACE TREATMENT METHOD
    3.
    发明申请
    SURFACE TREATMENT METHOD 有权
    表面处理方法

    公开(公告)号:US20080280536A1

    公开(公告)日:2008-11-13

    申请号:US11687879

    申请日:2007-03-19

    IPC分类号: B24B1/00

    CPC分类号: B24B1/00 B24B21/04

    摘要: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

    摘要翻译: 能够平滑静电卡盘的表面的表面处理方法,以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中,在静电卡盘的表面上形成喷涂膜,然后通过与磨石接触来研磨静电卡盘的表面,然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液,然后通过与胶带研磨装置的带接触,将静电卡盘的表面研磨成平滑的。

    Surface treatment method
    5.
    发明授权
    Surface treatment method 有权
    表面处理方法

    公开(公告)号:US07815492B2

    公开(公告)日:2010-10-19

    申请号:US11687879

    申请日:2007-03-19

    IPC分类号: B24B1/00

    CPC分类号: B24B1/00 B24B21/04

    摘要: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

    摘要翻译: 能够平滑静电卡盘的表面的表面处理方法,以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中,在静电卡盘的表面上形成喷涂膜,然后通过与磨石接触来研磨静电卡盘的表面,然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液,然后通过与胶带研磨装置的带接触,将静电卡盘的表面研磨成平滑的。

    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS
    6.
    发明申请
    MOUNTING STAGE AND PLASMA PROCESSING APPARATUS 审中-公开
    安装阶段和等离子体加工设备

    公开(公告)号:US20090199967A1

    公开(公告)日:2009-08-13

    申请号:US12365385

    申请日:2009-02-04

    IPC分类号: C23F1/08

    摘要: A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.

    摘要翻译: 一种等离子体处理装置的安装平台,其能够防止基板上的半导体装置中的绝缘膜的劣化。 导体构件连接到用于产生等离子体的射频电源。 电介质层埋在导体部件的上表面的中心部分。 静电卡盘安装在电介质层上。 静电吸盘具有满足以下条件的电极膜:<?in-line-formula description =“In-line formula”end =“lead”?> delta / z> = 85 <?in-line-formula description = “直线公式”end =“tail”?>其中delta =(rhov /(mupif))1/2其中z是电极膜的厚度,delta是电极膜相对于放射线的厚度, f是射频电力的频率,pi是圆周长与其直径的比率,μ是电极膜的导磁率,rhov 是电极膜的电阻率。

    Endoscope device
    7.
    发明授权
    Endoscope device 有权
    内窥镜装置

    公开(公告)号:US06767322B1

    公开(公告)日:2004-07-27

    申请号:US09588704

    申请日:2000-06-06

    IPC分类号: A61F105

    摘要: A cover glass frame as a second frame body mounting thereto a cover glass is fitted onto an objective lens frame, which is a first frame body mounting thereto a tip end lens and an objective lens as optical members, in a manner to be movable in a direction of optical axis, and is fixed after having been adjusted in position in the direction of optical axis. The objective lens frame and the cover glass frame thus fitted and fixed are fitted into and joined to a cylindrical member to constitute an imaging unit, which is then arranged in a tip end portion of an insertion part of an endoscope. Thereby, focus adjustment can be performed on the optical members, which are assembled into the imaging unit, and a tip end side portion of the insertion part of the endoscope can be made small in outer diameter to prevent entry of vapor into the imaging unit even when autoclave sterilization is carried out.

    摘要翻译: 将作为安装在其上的玻璃罩的第二框体的玻璃框架安装在物镜框架上,该物镜框架以可移动的方式安装在作为光学构件的顶端透镜和物镜上的第一框架体 光轴的方向,并且在沿光轴方向调整位置之后被固定。 这样安装和固定的物镜框架和盖玻璃框架装配到圆柱形构件中并连接到圆柱形构件上,以构成成像单元,该成像单元然后被布置在内窥镜的插入部分的末端部分中。 由此,可以对组装到摄像单元中的光学构件进行聚焦调节,并且可以使内窥镜的插入部的前端侧部分的外径小,以防止蒸气进入成像单元甚至 当进行高压灭菌时。

    TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS
    9.
    发明申请
    TABLE FOR PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理装置和等离子体处理装置的表

    公开(公告)号:US20110192540A1

    公开(公告)日:2011-08-11

    申请号:US13032360

    申请日:2011-02-22

    IPC分类号: H01L21/3065 C23C16/50

    摘要: An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.

    摘要翻译: 本发明的一个目的是通过控制施加在桌子的每个部分上的应力来抑制静电卡盘的损坏,包括导电材料即用于产生等离子体的电极,用于增强平面内的电介质层 等离子体工艺的均匀性和静电卡盘。 用于等离子体处理装置的工作台包括与高频电源连接并适于等离子体产生的导电构件,用于吸收存在于等离子体中的离子,或者用于两者; 设置在所述导电构件的顶面上的电介质层,具有相对于彼此不同厚度的中心部分和周边部分,并且适于提供在所述基板上的平面中的高频电场强度的均匀性, 被处理 和用于静电卡盘的电极膜,设置在电介质层中并适用于将电极静电夹持在电介质层的顶面上。 通过这样的结构,可以控制由于温度变化而施加在静电卡盘上的应力。

    Processing apparatus
    10.
    发明申请
    Processing apparatus 审中-公开
    处理装置

    公开(公告)号:US20050042881A1

    公开(公告)日:2005-02-24

    申请号:US10843295

    申请日:2004-05-12

    CPC分类号: H01L21/67248 H01L21/6833

    摘要: The time period during which a wafer is stabilized to a predetermined temperature by increasing a thermal conductivity of a junction layer for bonding an electrostatic chuck layer and a support together, and the deterioration of the junction layer that is caused by active species generated by plasma is suppressed. Between the electrostatic chuck layer formed by sintering together a chuck electrode made of tungsten and an insulating layer made of alumina and the support, made of aluminum, for supporting the electrostatic chuck layer, the junction layer is provided to bond the electrostatic chuck layer and the support together. The junction layer is formed by impregnating a porous ceramic with a silicone-based adhesive resin. Further, rubber or a heat shrink tube made of a fluoric resin such as PFA is provided as a soft coating member so as to coat a side circumferential surface of the junction layer and the side circumferential surfaces of the electrostatic chuck layer and the support come into a tight contact with the heat shrink tube or rubber.

    摘要翻译: 通过增加用于将静电卡盘层和支撑体接合在一起的接合层的热导率,并且由等离子体产生的活性物质引起的接合层的劣化,晶片稳定在预定温度的时间段是 被压制 在通过烧结在由钨制成的卡盘电极和由氧化铝制成的绝缘层上形成的静电卡盘层和由铝制成的用于支撑静电卡盘层的支撑件之间设置接合层以将静电卡盘层和 一起支持 接合层通过用硅氧烷基粘合剂树脂浸渍多孔陶瓷而形成。 此外,作为软涂层,设置橡胶或由诸如PFA的氟树脂制成的热收缩管,以覆盖接合层的侧周面,并且静电卡盘层和支撑体的侧周面进入 与热缩管或橡胶紧密接触。