摘要:
A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要:
A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要:
A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.
摘要:
A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.
摘要:
A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.
摘要:
A mounting stage for a plasma processing apparatus that can prevent degradation of an insulating film in a semiconductor device on a substrate. A conductor member is connected to a radio-frequency power source for producing plasma. A dielectric layer is buried in a central portion of an upper surface of the conductor member. An electrostatic chuck is mounted on the dielectric layer. The electrostatic chuck has an electrode film that satisfies the following condition: δ/z≧85 where δ=(ρv/(μπf))1/2 where z is the thickness of the electrode film, δ is the skin depth of the electrode film with respect to radio-frequency electrical power supplied from the radio-frequency power source, f is the frequency of the radio-frequency electrical power, π is the ratio of a circumference of a circle to its diameter, μ is the magnetic permeability of the electrode film, and ρv is the specific resistance of the electrode film.
摘要:
A cover glass frame as a second frame body mounting thereto a cover glass is fitted onto an objective lens frame, which is a first frame body mounting thereto a tip end lens and an objective lens as optical members, in a manner to be movable in a direction of optical axis, and is fixed after having been adjusted in position in the direction of optical axis. The objective lens frame and the cover glass frame thus fitted and fixed are fitted into and joined to a cylindrical member to constitute an imaging unit, which is then arranged in a tip end portion of an insertion part of an endoscope. Thereby, focus adjustment can be performed on the optical members, which are assembled into the imaging unit, and a tip end side portion of the insertion part of the endoscope can be made small in outer diameter to prevent entry of vapor into the imaging unit even when autoclave sterilization is carried out.
摘要:
An endoscope suitable for autoclave sterilization includes an insertion section having an objective lens section disposed at the extreme end thereof for focusing a subject image and an eyepiece section located on the base end side of the inserting section and including at least an eyepiece lens. an image guide fiber is disposed in the bundle for transmitting the subject image in an observation section focused by the objective lens section. An eyepiece lens unit is disposed in the eyepiece section, the eyepiece lens unit causing the eyepiece lens to confront the base end structure whose hermetic seal level is higher than the watertight seal level of the shell of the endoscope. A focus position changing means is disposed to the eyepiece lens unit to change the focus position of the eyepiece lens. The eyepiece section is so constructed and/or assembled that the autoclave sterilization process does not cause water vapor or the like to adversely affect the operability of the eyepiece section.
摘要:
An object of the present invention is to suppress damage of an electrostatic chuck, by controlling stress exerted on each part of a table, which includes an electrically conductive material, i.e., an electrode for generating plasma, a dielectric layer for enhancing the in-plane uniformity of a plasma process, and an electrostatic chuck. The table for a plasma processing apparatus includes an electrically conductive member connected with a high frequency power source and adapted for plasma generation, for drawing ions present in the plasma, or for both thereof; a dielectric layer provided on a top face of the electrically conductive member, having a central portion and a peripheral portion that are different in thickness relative to each other, and adapted for providing uniformity of high frequency electric field intensity in a plane over the substrate to be processed; and an electrode film for an electrostatic chuck, provided in the dielectric layer and adapted for electrostatically chucking the substrate onto a top face of the dielectric layer. With such configuration, the stress exerted on the electrostatic chuck due to temperature change can be controlled.
摘要:
The time period during which a wafer is stabilized to a predetermined temperature by increasing a thermal conductivity of a junction layer for bonding an electrostatic chuck layer and a support together, and the deterioration of the junction layer that is caused by active species generated by plasma is suppressed. Between the electrostatic chuck layer formed by sintering together a chuck electrode made of tungsten and an insulating layer made of alumina and the support, made of aluminum, for supporting the electrostatic chuck layer, the junction layer is provided to bond the electrostatic chuck layer and the support together. The junction layer is formed by impregnating a porous ceramic with a silicone-based adhesive resin. Further, rubber or a heat shrink tube made of a fluoric resin such as PFA is provided as a soft coating member so as to coat a side circumferential surface of the junction layer and the side circumferential surfaces of the electrostatic chuck layer and the support come into a tight contact with the heat shrink tube or rubber.