公开(公告)号：US06518548B2

公开(公告)日：2003-02-11

申请号：US10084378

申请日：2002-02-28

申请人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

发明人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

IPC分类号： H05B368

CPC分类号： H01L21/67103 ,  H01L21/67248

摘要： So as to provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on the surface and serving to set the temperature of the substrate, and a chuck mechanism to fix the substrate in contact to a plurality of the projections by chucking the substrate toward the direction of the temperature control plate.

公开(公告)号：US06394797B1

公开(公告)日：2002-05-28

申请号：US09526460

申请日：2000-03-16

申请人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

发明人： Masakazu Sugaya ,  Fumio Murai ,  Yutaka Kaneko ,  Masafumi Kanetomo ,  Shigeki Hirasawa ,  Tomoji Watanabe ,  Tatuharu Yamamoto ,  Katsuhiro Kuroda

IPC分类号： F27D500

CPC分类号： H01L21/67103 ,  H01L21/67248

摘要： To provide a substrate temperature control system capable of unifying the temperature of the substrate and capable of shortening the temperature elevation time (temperature lowering time), the substrate temperature control system is equipped with a temperature control plate (heating or cooling plate) having a plurality of projections on its surface and acting to set the temperature of the substrate. A chuck mechanism is provided to fix the substrate in contact with a plurality of the projections by chucking the substrate toward the temperature control plate.

摘要翻译： 为了提供能够统一基板的温度并且能够缩短升温时间（降温时间）的基板温度控制系统，基板温度控制系统配备有具有多个温度控制板（加热或冷却板） 的表面上的突起并用于设定基板的温度。 提供卡盘机构，通过将基板夹持到温度控制板来固定基板与多个突起接触。

公开(公告)号：US5628828A

公开(公告)日：1997-05-13

申请号：US397991

申请日：1995-03-03

申请人： Yoshio Kawamura ,  Shigeo Moriyama ,  Tatuharu Yamamoto ,  Fumihiko Uchida

发明人： Yoshio Kawamura ,  Shigeo Moriyama ,  Tatuharu Yamamoto ,  Fumihiko Uchida

IPC分类号： H01L21/677 ,  C23C16/44 ,  C23C16/458 ,  C23C16/54 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/304 ,  C23C16/00

CPC分类号： H01L21/67167 ,  C23C16/4412 ,  C23C16/4583 ,  C23C16/54 ,  H01L21/67173 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67748 ,  Y10S414/139

摘要： Process equipment and method for processing a semiconductor device comprising a buffer chamber, at least one process chamber connected to the buffer chamber through an opening portion, a holding/carrying unit disposed at a position facing the opening portion for holding and carrying a member to be processed such as a wafer, and a carrier unit disposed in the buffer chamber for transferring the member to be processed to and from the holding/carrying unit. The holding/carrying unit includes a flattened surface closely facing the opening portion for holding an atmosphere in the at least one process chamber independently from an atmosphere in the buffer chamber. The opening portion has a flattened surface closely facing the flattened surface of the holding/carrying unit.

摘要翻译： 用于处理半导体器件的工艺设备和方法，包括缓冲室，通过开口部连接到缓冲室的至少一个处理室，设置在面向开口部分的位置处的保持/承载单元，用于保持和承载构件 处理如晶片，以及设置在缓冲室中的载体单元，用于将待加工的构件传送到保持/携带单元。 保持/携带单元包括紧密面向开口部分的平坦表面，用于独立于缓冲室中的气氛保持至少一个处理室中的气氛。 开口部具有与保持/承载单元的平坦表面紧密相对的平坦表面。

公开(公告)号：US5981399A

公开(公告)日：1999-11-09

申请号：US894308

申请日：1997-08-14

申请人： Yoshio Kawamura ,  Tatuharu Yamamoto ,  Shigeo Moriyama ,  Yoshifumi Kawamoto ,  Natsuki Yokoyama ,  Fumihiko Uchida ,  Minoru Hidaka ,  Miyako Matsui

发明人： Yoshio Kawamura ,  Tatuharu Yamamoto ,  Shigeo Moriyama ,  Yoshifumi Kawamoto ,  Natsuki Yokoyama ,  Fumihiko Uchida ,  Minoru Hidaka ,  Miyako Matsui

IPC分类号： B65G49/07 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67167 ,  H01L21/67196 ,  H01L21/67742 ,  H01L21/67748

摘要： A semiconductor device fabrication apparatus having multiple processing chambers for different processes, where a substrate is carried in and out in a sophisticated manner, with their different internal ambient conditions being retained, so that the substrate is free from contamination, thereby manufacturing high-quality semiconductor devices at high throughput. The apparatus includes a movable buffer chamber having a wafer carriage means within a transfer chamber which faces a process chamber, an evacuation means which evacuates of gas the buffer chamber, transfer chamber and process chamber independently, a gas feed means, and a control means.

摘要翻译： PCT No.PCT / JP95 / 00210 Sec。 371日期1997年8月14日 102（e）日期1997年8月14日PCT提交1995年2月15日PCT公布。 公开号WO96 / 25760 PCT 日期1996年8月22日一种半导体器件制造装置，具有用于不同工艺的多个处理室，其中衬底以复杂的方式进出，同时保持其不同的内部环境条件，使得衬底没有污染，从而 以高产量制造高品质半导体器件。 该装置包括可移动缓冲室，其具有面向处理室的传送室内的晶片托架装置，独立地排出缓冲室，传送室和处理室的气体的抽气装置，气体供给装置和控制装置。