Vacuum heating furnace with tapered portion
    5.
    发明授权
    Vacuum heating furnace with tapered portion 失效
    带锥形部分的真空加热炉

    公开(公告)号:US6093911A

    公开(公告)日:2000-07-25

    申请号:US83055

    申请日:1998-05-22

    IPC分类号: H01L21/22 H01L21/00

    CPC分类号: H01L21/67115

    摘要: A vacuum heating furnace comprises a translucent container for retaining a heated object and a heating light source for heating a heated object retained in the translucent container. The translucent container has on its surface a tapered portion to receive transmitted light totally reflected on the inner surface of the translucent container at an angle smaller than a critical angle.

    摘要翻译: 真空加热炉包括用于保持加热物体的半透明容器和用于加热保持在半透明容器中的被加热物体的加热光源。 半透明容器在其表面上具有锥形部分,以小于临界角的角度接收在半透明容器的内表面上全反射的透射光。

    Process for producing semiconductor and apparatus for production
    10.
    发明授权
    Process for producing semiconductor and apparatus for production 失效
    生产半导体和设备的方法

    公开(公告)号:US06403479B1

    公开(公告)日:2002-06-11

    申请号:US09787242

    申请日:2001-03-16

    IPC分类号: H01L2144

    摘要: To provide a process for producing a semiconductor, which can form a CVD film at a high film-forming rate with a good step coverage, good uniformities of film forming rate and sheet resistance in the in-plane region of a wafer and a good reproducibility at every wafers, and an apparatus for treating a semiconductor for the process. In a treating chamber kept under pressure of 1,000-50,000 Pa, a wafer is placed on a susceptor, and a film is deposited on the wafer by heating the wafer at 500° C. or higher by a plate-shaped heater through the susceptor, while supplying a feed gas into the treating chamber at 500-50,000 sccm through gas injection nozzles provided near the center of a shower plate provided approximately in parallel with the wafer at a distance of 1-20 mm from the wafer and kept at a temperature of 200° C. or lower.

    摘要翻译: 为了提供一种制造半导体的方法,其能够以高的成膜速度以良好的阶梯覆盖率形成CVD膜,在晶片的面内区域具有良好的成膜速度和薄层电阻的均匀性以及良好的再现性 在每个晶片处,以及用于处理该半导体的装置。 在保持在1000-50,000Pa的压力下的处理室中,将晶片放置在基座上,通过板式加热器通过基座加热500℃或更高的晶片,将膜沉积在晶片上, 同时通过设置在与晶片大致平行于淋洗板的中心附近的气体注射喷嘴以500-50,000sccm供给进料气体,距离晶片为距离晶片1-20mm的距离,并保持在 200℃以下。