公开(公告)号：US20090166557A1

公开(公告)日：2009-07-02

申请号：US11338843

申请日：2006-01-25

申请人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

发明人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

IPC分类号： G21K5/10 ,  G01N23/00

CPC分类号： H01J37/073 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/0635 ,  H01J2237/24564 ,  H01J2237/2594

摘要： The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

摘要翻译： 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。

公开(公告)号：US07683319B2

公开(公告)日：2010-03-23

申请号：US11338843

申请日：2006-01-25

申请人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

发明人： Hiroshi Makino ,  Zhaohui Cheng ,  Kenji Tanimoto ,  Hideo Todokoro

IPC分类号： H01J37/256

CPC分类号： H01J37/073 ,  H01J37/026 ,  H01J37/28 ,  H01J2237/0048 ,  H01J2237/0635 ,  H01J2237/24564 ,  H01J2237/2594

摘要： The invention solves charge nonuniformity of a specimen surface resulting from emission variation of a carbon nanotube electron source and individual difference of emission characteristics. During charge control processing, charge of the specimen surface is measured in real time. As means for solving charge nonuniformity resulting from nonuniformity of electron illumination density, electrons illuminating the specimen and the specimen are moved relatively to average electron illumination density. Moreover, an absorption current flowing into the specimen and the numbers of secondary electrons emitted from the specimen and of backscattered electrons are measured as means for monitoring charge of the specimen surface in real time.

摘要翻译： 本发明解决了由碳纳米管电子源的发射变化引起的样品表面的电荷不均匀性和发射特性的个体差异。 在充电控制处理期间，实时测量样品表面的电荷。 作为解决由电子照射密度不均匀引起的电荷不均匀的手段，照射样品和样品的电子相对于平均电子照射密度移动。 此外，测量流入样本的吸收电流和从样本和背散射电子发射的二次电子的数量作为用于实时监测样品表面的电荷的装置。

公开(公告)号：US20070228276A1

公开(公告)日：2007-10-04

申请号：US11692263

申请日：2007-03-28

申请人： HIROSHI MAKINO ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

发明人： HIROSHI MAKINO ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

IPC分类号： G21K7/00

CPC分类号： H01J37/265 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/2817

摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.

摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。

公开(公告)号：US07652248B2

公开(公告)日：2010-01-26

申请号：US11692263

申请日：2007-03-28

申请人： Hiroshi Makino ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

发明人： Hiroshi Makino ,  Kenji Tanimoto ,  Zhaohui Cheng ,  Hikaru Koyama

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： H01J37/265 ,  H01J2237/047 ,  H01J2237/0473 ,  H01J2237/0475 ,  H01J2237/2817

摘要： When performing an inspection using a charge control function in a SEM wafer inspection apparatus, acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change. By this means, charge of a wafer can be controlled, while restraining electrostatic lens effect generated near a control electrode. As a result, an inspection using a charge control function at low incident energy and in a wide viewing field can be performed, and a highly sensitive inspection of semiconductor patterns subject to damages due to electron beam irradiation can be realized. Acceleration voltage, control voltage and deceleration voltage are changed in conjunction so that incident energy determined by “acceleration voltage−deceleration voltage” and bias voltage determined by “deceleration voltage−control voltage” do not change.

摘要翻译： 当在SEM晶片检查装置中使用充电控制功能进行检查时，加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压 - 控制电压“不变。 通过这种方式，可以控制晶片的电荷，同时抑制在控制电极附近产生的静电透镜效应。 结果，可以执行使用低入射能量和宽视场中的电荷控制功能的检查，并且可以实现由于电子束照射而受到损害的半导体图案的高灵敏度检查。 加速电压，控制电压和减速电压结合起来，使得由“加速电压 - 减速电压”确定的入射能量和由“减速电压控制电压”确定的偏置电压不变。

公开(公告)号：US20080017797A1

公开(公告)日：2008-01-24

申请号：US11779140

申请日：2007-07-17

申请人： Zhaohui CHENG ,  Hiroshi Makino ,  Kenji Tanimoto ,  Seiko Omori

发明人： Zhaohui CHENG ,  Hiroshi Makino ,  Kenji Tanimoto ,  Seiko Omori

IPC分类号： G01N23/00

CPC分类号： H01J37/28 ,  H01J37/244 ,  H01J37/266 ,  H01J2237/0492 ,  H01J2237/04924 ,  H01J2237/21 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24571 ,  H01J2237/2816 ,  H01J2237/2817

摘要： Pattern inspection and measurement technique where the failure of the detection of a secondary signal due to the variation of an optical condition of a primary electron beam or the occurrence of an electric field perpendicular to a traveling direction of the primary electron beam in a surface of a wafer is minimized, an SEM image the SN ratio of which is high and which hardly has shading in a field of view can be acquired and measurement such as measuring the dimensions and configuration of a measured object and inspecting a defect is enabled at high precision and high repeatability. A lens for converging a secondary signal is installed in a position which a traveling direction of the primary electron beam crosses or on a course of the secondary signal spatially separated from the primary electron beam by Wien filter. An SEM image always free of shading caused by the failure of the detection of a secondary signal in the field of view can be acquired by providing a unit that changes the setting of the lens according to the optical condition such as retarding voltage and an electrification control electrode of the primary electron beam.

摘要翻译： 模式检查和测量技术，其中由于一次电子束的光学条件的变化或与在一次电子束的表面中的一次电子束的行进方向垂直的电场的发生而检测到次级信号的故障 晶片被最小化，可以获得SN比高且在视场中几乎不具有阴影的SEM图像，并且能够以高精度测量测量对象的尺寸和构造以及检查缺陷， 重复性高。 用于会聚二次信号的透镜安装在一次电子束的行进方向与维纳滤波器与一次电子束空间分离的二次信号的过程的位置。 可以通过提供根据诸如延迟电压和通电控制的光学条件来改变透镜的设置的单元来获得始终没有由视场中的次级信号的检测失败引起的阴影的SEM图像 一次电子束的电极。

公开(公告)号：US07098455B2

公开(公告)日：2006-08-29

申请号：US10404451

申请日：2003-04-02

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： A circuit pattern inspecting instrument includes an electron-optical system for irradiating an electron beam on a sample, an electron beam deflector, a detector for detecting secondary charged particles from the sample, and a mode setting unit for switching between a first mode and a second mode. An electron beam current is larger in the first mode than in the second mode, and an electron beam scanning speed is higher in the first mode than in the second mode. The circuit pattern inspecting instrument is configured so that first the sample is observed in the first mode, then a particular position on the sample is selected based on image data produced by an output of the detector in the first mode, and then the particular position on the sample is observed in the second mode.

公开(公告)号：US07728294B2

公开(公告)日：2010-06-01

申请号：US11808247

申请日：2007-06-07

申请人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

发明人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

IPC分类号： H01J37/21 ,  H01J37/26

CPC分类号： H01J37/20 ,  G01R31/307 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2008 ,  H01J2237/20235 ,  H01J2237/20292 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/28

摘要： A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.

摘要翻译： 提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。 将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。 来自待检查晶片的二次电子（或反射电子）10由充电控制电极5控制并由传感器11检测。图像处理器将来自传感器11的检测信号转换为检测图像， 通过预定的参考图像判断缺陷，总体控制部分14从每个要检查的晶片的配方信息中选择检查条件6并设置要施加到充电控制电极5的电压.Za级8设置晶片之间的距离 根据该电压检查6和充电控制电极5。

公开(公告)号：US20060243908A1

公开(公告)日：2006-11-02

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

公开(公告)号：US07397031B2

公开(公告)日：2008-07-08

申请号：US11452989

申请日：2006-06-15

申请人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

发明人： Hiroyuki Shinada ,  Atsuko Takafuji ,  Takanori Ninomiya ,  Yuko Sasaki ,  Mari Nozoe ,  Hisaya Murakoshi ,  Taku Ninomiya ,  Yuji Kasai ,  Hiroshi Makino ,  Yutaka Kaneko ,  Kenji Tanimoto

IPC分类号： H01J37/28

CPC分类号： G01N23/225 ,  G01R31/307 ,  H01J37/28 ,  H01J2237/2817

摘要： An apparatus for inspecting a sample using a scanning electron microscope includes a sample stage, a first electron-optical system to scan an electron beam of a first beam current on the sample, a second electron-optical system to scan an electron beam of a second beam current smaller than the first beam current on the sample, a mechanism to move the sample stage, a detector provided in each of the first and second electron-optical systems to detect a secondary electron. The first electron-optical system is operable in a first mode and the second electron-optical system is operable in a second mode with higher resolution than that of the first mode. In the first mode, the sample is observed while the sample stage is moved continuously, and in the second mode, the sample is observed by detecting a secondary electron using the detector while the sample stage is held stationary.

摘要翻译： 使用扫描电子显微镜检查样品的装置包括样品台，用于扫描样品上的第一束电流的电子束的第一电子 - 光学系统，用于扫描第二电子束的电子束的第二电子 - 光学系统 光束电流小于样品上的第一光束电流，移动样品台的机构，设置在每个第一和第二电子光学系统中的检测二次电子的检测器。 第一电子 - 光学系统可在第一模式中操作，并且第二电子 - 光学系统可以以比第一模式更高的分辨率在第二模式中操作。 在第一模式中，在样品台连续移动时观察样品，在第二模式中，通过在样品台保持静止时使用检测器检测二次电子来观察样品。

公开(公告)号：US20080067381A1

公开(公告)日：2008-03-20

申请号：US11808247

申请日：2007-06-07

申请人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

发明人： Takashi Hiroi ,  Kenji Tanimoto ,  Yuko Sasaki ,  Hiroshi Makino

IPC分类号： G21K7/00

CPC分类号： H01J37/20 ,  G01R31/307 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/2008 ,  H01J2237/20235 ,  H01J2237/20292 ,  H01J2237/221 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/28

摘要： A semiconductor wafer inspection tool and a semiconductor wafer inspection method capable of conducting an inspection under appropriate conditions in any one of an NVC (Negative Voltage Contrast) mode and a PVC (Positive Voltage Contrast) mode is provided. Primary electrons 2 are irradiated onto a wafer to be inspected 6 and the irradiation position thereof is scanned in an XY direction. Secondary electrons (or reflected electrons) 10 from the wafer to be inspected 6 are controlled by a charge control electrode 5 and detected by a sensor 11. An image processor converts a detection signal from the sensor 11 to a detected image, compares the detected image with a predetermined reference image, judges defects, an overall control section 14 selects inspection conditions from recipe information for each wafer to be inspected 6 and sets a voltage to be applied to the charge control electrode 5. A Z stage 8 sets the distance between the wafer to be inspected 6 and the charge control electrode 5 according to this voltage.

摘要翻译： 提供能够在适当条件下进行NVC（负电压对比度）模式和PVC（正电压对比度）模式中的任一种的半导体晶片检查工具和半导体晶片检查方法。 将一次电子2照射到要检查的晶片6上，并且其XY照射位置被扫描。 来自待检查晶片的二次电子（或反射电子）10由电荷控制电极5控制，并由传感器11检测。 图像处理器将来自传感器11的检测信号转换为检测图像，将检测到的图像与预定参考图像进行比较，判断缺陷，总体控制部14从每个被检查晶片的配方信息中选择检查条件6， 施加到充电控制电极5的电压。 Z级8根据该电压设定待检查晶片6与充电控制电极5之间的距离。