摘要:
A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.
摘要翻译:可固化组合物包括:通过包括R1SiX3,R2SiX3,R3R4SiX2和R5SiX3的有机硅烷混合物的水解缩合得到的Mw为3,000〜100,000的含硅聚合物100质量份,R2SiX3和R3R4SiX2的合计为5〜60 mol%,任选的预聚物,任选的环状硅氧烷化合物,0.0001-10质量份有机过氧化物和任选的金属催化剂,以及10-1500质量份填料,其中R1是C2-6链烯基, R2是C1-6烷基,R3和R4各自是C1-6烷基,R5是任选被C 1-6烷基取代的苯基,X是C 1-6烷氧基,一个或多个 R 2〜R 4为甲基,f表示2〜10的数,g表示0〜8的数,n表示1或2。
摘要:
A curable composition includes: 100 parts by mass of a silicon-containing polymer having a Mw of 3,000 to 100,000 obtainable by hydrolysis-condensation of an organosilane mixture including R1SiX3, R2SiX3, R3R4SiX2 and R5SiX3, the total of R2SiX3 and R3R4SiX2 being 5 to 60 mol %, optionally a prepolymer, optionally a cyclic siloxane compound, 0.0001 to 10 parts by mass of an organic peroxide and optionally a metal catalyst, and 10 to 1,500 parts by mass of a filler, wherein R1 is a C2-6 alkenyl group, R2 is a C1-6 alkyl group, R3 and R4 are each a C1-6 alkyl group, R5 is a phenyl group optionally substituted with a C1-6 alkyl group, and X is a C1-6 alkoxy group, one or more of R2 to R4 is a methyl group, f represents a number of 2 to 10, g represents a number of 0 to 8, and n represents 1 or 2.
摘要翻译:可固化组合物包括:通过包括R1SiX3,R2SiX3,R3R4SiX2和R5SiX3的有机硅烷混合物的水解缩合得到的Mw为3,000〜100,000的含硅聚合物100质量份,R2SiX3和R3R4SiX2的合计为5〜60 mol%,任选的预聚物,任选的环状硅氧烷化合物,0.0001-10质量份有机过氧化物和任选的金属催化剂,以及10-1500质量份填料,其中R1是C2-6链烯基, R2是C1-6烷基,R3和R4各自是C1-6烷基,R5是任选被C 1-6烷基取代的苯基,X是C 1-6烷氧基,一个或多个 R 2〜R 4为甲基,f表示2〜10的数,g表示0〜8的数,n表示1或2。
摘要:
A lead frame substrate, including: a metal plate with a first surface and a second surface; a connection post formed on the first surface; wiring formed on the second surface; and a pre-molding resin layer, in which a thickness of the pre-molding resin layer is the same as a height of the connection post.
摘要:
A lead frame substrate, includes: a metal plate having first and second surfaces; a semiconductor element mounting section, semiconductor element electrode connection terminals, and a first outer frame section formed on the first surface; external connection terminals formed on the second surface and electrically connected with the semiconductor element electrode connection terminals; a second outer frame section formed on the second surface; and a resin layer formed on a gap between the first outer frame and the second outer frame. Each external connection terminal buried in the resin layer has at least one projection formed on a side surface thereof throughout a side lower portion of the first surface.
摘要:
A method includes: forming a photoresist pattern to form each of a semiconductor element mounting section on which a semiconductor element is mounted, semiconductor element electrode connection terminals for connection with electrodes of the semiconductor element, and a first outer frame section on a first surface of a metal plate; forming a photoresist pattern to form each of external connection terminals, a second outer frame section, and grooves in at least a part of the second outer frame section on a second surface of the metal plate; etching a metal plate exposing section, in which the metal plate of the second surface is exposed, to form holes that do not pass through the metal plate exposing section and grooves that run from an inside to an outside of the second outer frame section; coating a pre-mold resin on the holes and the grooves, and heating the pre-mold resin under pressure using a flat-bed press to form a resin layer; and etching the first surface to form the semiconductor element mounting section, the semiconductor element electrode connection terminals electrically connected with the external connection terminals, and the first outer frame section.
摘要:
A lead frame substrate, includes: a metal plate having first and second surfaces; a semiconductor element mounting section, semiconductor element electrode connection terminals, and a first outer frame section formed on the first surface; external connection terminals formed on the second surface and electrically connected with the semiconductor element electrode connection terminals; a second outer frame section formed on the second surface; and a resin layer formed on a gap between the first outer frame and the second outer frame. Each external connection terminal buried in the resin layer has at least one projection formed on a side surface thereof throughout a side lower portion of the first surface.
摘要:
Provided is a manufacturing method of a substrate for a semiconductor element including the steps of: providing a first photosensitive resin layer on a first surface of a metal plate; providing a second photosensitive resin layer on a second surface different from the first surface of the metal plate; forming a first etching mask for forming a connection post on the first surface of the metal plate; forming a second etching mask for forming a wiring pattern on the second surface of the metal plate; forming the connection post by performing an etching from the first surface to a midway of the metal plate; filling in a premold resin to a portion of the first surface where the connection post does not exist; processing so that a height of the connection post of the first surface is lower than a height of the premold resin surrounding the connection post; and forming the wiring pattern by performing an etching on the second surface.
摘要:
A manufacturing method of a substrate for a semiconductor element, wherein a first step includes: forming a first and second photosensitive resin layer on a first and second surface of a metal plate, respectively; forming a first and second resist pattern on the first and second surface, for forming a connection post and a wiring pattern, respectively. A second step includes: forming the connection post and wiring pattern; filling in a premold liquid resin to the first surface which was etched; forming a premold resin layer by hardening the premold liquid resin; performing a grinding operation on the first surface, and exposing an upper bottom surface of the connection post from the premold resin layer. A groove structure is formed by the first and second steps, wherein a depth of the groove is up to an intermediate part in a thickness direction of the metal plate.
摘要:
A lead frame substrate, including: a metal plate having a first surface and a second surface; a semiconductor element mount portion and a semiconductor element electrode connection terminal that are formed on the first surface; an external connection terminal formed on the second surface and electrically connected to the semiconductor element electrode connection terminal; a conducting wire that connects the semiconductor element electrode connection terminal and the external connection terminal to each other; a resin layer formed on the metal plate; a hole portion that is partly formed in the second surface of the metal plate and does not penetrate the metal plate; and a plurality of protrusions that are formed on a bottom surface of the hole portion and protrude in a direction away from the metal plate, the protrusions having a height lower than a position of the second surface, not being in electrical conduction with the conducting wire, and being dispersed separately.
摘要:
Provided is a manufacturing method of a semiconductor element substrate including: a step of forming a first photoresist pattern on a first surface of a metallic plate, to form a semiconductor element mounting part, a semiconductor element electrode connection terminal, a wiring, an outer frame part, and a slit; a step of forming a second photoresist pattern on the second surface of the metallic plate; a step of forming the slit by half etching to connect the metallic chip with a four corners of the outer frame part; a step of forming a plurality of concaved parts on the second surface of the metallic plate; a step of forming a resin layer by injecting a resin to the plurality of concaved parts; and a step of etching the first surface of the metallic plate and forming the semiconductor element electrode connection terminal and the outer frame.