公开(公告)号：US4682077A

公开(公告)日：1987-07-21

申请号：US755014

申请日：1985-07-15

申请人： Masanori Maruyama ,  Masamichi Moriya ,  Shinichi Kato ,  Masakazu Fukushima ,  Yasuhiko Nonaka ,  Chihaya Ogusu

发明人： Masanori Maruyama ,  Masamichi Moriya ,  Shinichi Kato ,  Masakazu Fukushima ,  Yasuhiko Nonaka ,  Chihaya Ogusu

IPC分类号： H01J29/46 ,  H01J29/48 ,  H01J29/52 ,  H04N5/228

CPC分类号： H01J29/488

摘要： A camera tube device for use in a television camera comprises an electron gun including a cathode electrode for emission of an electron beam, and first and second grid electrodes respectively having apertures for controlling the diameter of the electron beam. The aperture of the second grid electrode is sufficiently smaller than the aperture of the first grid electrode. The first grid electrode is applied with a positive voltage relative to the cathode electrode and the second grid electrode is applied with a positive voltage relative to the cathode electrode which is higher than that applied to the first grid electrode. The positive voltage applied to the first grid electrode has such a value that forms the electron beam having passed through the aperture of the first grid electrode into a laminar flow beam. As the level of brightness of the object increases, the positive voltage applied to the first grid electrode is decreased to increase the amount of electron beam passing through the aperture of the second grid electrode.

摘要翻译： 用于电视摄像机的相机管装置包括电子枪，其包括用于发射电子束的阴极，以及分别具有用于控制电子束直径的孔的第一和第二栅电极。 第二栅电极的孔径比第一栅电极的孔径小得多。 第一栅电极相对于阴极被施加正电压，并且第二栅极施加相对于阴极的正电压，其高于施加到第一栅电极的正电压。 施加到第一栅电极的正电压具有这样的值，其形成已经通过第一栅电极的孔的电子束成层流束。 当物体的亮度水平增加时，施加到第一栅极的正电压减小，以增加通过第二栅电极的孔径的电子束的量。

公开(公告)号：US4540916A

公开(公告)日：1985-09-10

申请号：US437335

申请日：1982-10-28

申请人： Masanori Maruyama ,  Masakazu Fukushima ,  Shinichi Kato ,  Chihaya Ogusu

发明人： Masanori Maruyama ,  Masakazu Fukushima ,  Shinichi Kato ,  Chihaya Ogusu

IPC分类号： H01J29/48 ,  H01J29/46 ,  H01J29/56

CPC分类号： H01J29/488

摘要： An electron gun for a television camera tube comprises a cathode for emission of electrons, a first grid disposed subsequently to the cathode and having a first aperture supplied with a positive voltage relative to the cathode, a second grid disposed subsequently to the first grid and having a second aperture supplied with a higher positive voltage than that supplied to the first grid, and an intermediate grid interposed between the first and second grids and having a hole. The intermediate grid forms a divergent electron lens near the first aperture between the first and second grids. An electron beam having passed through the first aperture is once diverged by the divergent electron lens to form a crossover at an axial position of the gun which is remote from the first grid and at which the potential on the beam axis is high, whereby broadening of the width of the velocity distribution of extracted electrons can be suppressed to a minimum and the amount of beam current passing through the second aperture can be increased.

摘要翻译： 一种用于电视摄像机管的电子枪包括用于发射电子的阴极，设置在阴极附近并具有相对于阴极提供正电压的第一孔径的第一栅极，以及随后设置在第一栅极上的第二栅极， 提供具有比提供给第一格栅的正电压高的正电压的第二孔，以及插入在第一栅极和第二栅极之间并具有孔的中间栅格。 中间栅格在第一和第二栅极之间的第一孔附近形成发散电子透镜。 已经通过第一孔的电子束一旦被发散的电子透镜分开，在枪的轴向位置处形成一个与第一格栅远离的轴的交叉点，并且在该轴处的波束轴上的电位高，从而使 提取的电子的速度分布的宽度可以被抑制到最小，并且可以增加通过第二孔径的束流的量。

公开(公告)号：US4792721A

公开(公告)日：1988-12-20

申请号：US39275

申请日：1987-04-17

申请人： Kentaro Oku ,  Masanori Maruyama ,  Masakazu Fukushima ,  Shinichi Kato

发明人： Kentaro Oku ,  Masanori Maruyama ,  Masakazu Fukushima ,  Shinichi Kato

IPC分类号： H01J29/74 ,  H01J29/62 ,  H01J29/70

CPC分类号： H01J29/74

摘要： A cathode-ray tube comprises an electron beam generating section provided at one end of the tube, a target provided at the other end of the tube, and a group of electrodes provided on an inner wall of the tube for focusing and deflecting an electron beam. The electrode group includes first and second electrodes between the one and other ends of the tube in the mentioned order. The first electrode has a lead electrode portion for supplying an electric potential to the second electrode. The lead electrode portion extends along the tube axis with a zigzag form in which an angle .angle.MZN of a convave apex M and a convex apex N adjacent thereto spanning in a circumferential direction centering the tube axis Z is not smaller than 115.degree. or a spiral form which rotates centering the tube axis at a rotation angle not smaller than 420.degree..

摘要翻译： 阴极射线管包括设置在管的一端的电子束产生部分，设置在管的另一端的靶和设置在管的内壁上的一组电极，用于聚焦和偏转电子束 。 电极组包括按照所述顺序在管的一端和另一端之间的第一和第二电极。 第一电极具有用于向第二电极提供电位的引线电极部分。 引线电极部分以管状轴线的方式延伸，其中，在Z轴的Z轴方向上，与其轴线Z对齐的圆周方向上的交错顶点M的角度角MZN与其相邻的凸顶点N不小于115°， 使管轴以不小于420°的旋转角定心旋转的形式。

公开(公告)号：US4866337A

公开(公告)日：1989-09-12

申请号：US15378

申请日：1987-02-17

申请人： Masanori Maruyama ,  Kentaro Oku ,  Masakazu Fukushima ,  Shinichi Kato ,  Mitsuhiro Kurashige

发明人： Masanori Maruyama ,  Kentaro Oku ,  Masakazu Fukushima ,  Shinichi Kato ,  Mitsuhiro Kurashige

IPC分类号： H01J29/76 ,  H01J29/74

CPC分类号： H01J29/74

摘要： In an electromagnetic focusing electrostatic type image pick-up tube the electrostatic deflecting electrodes formed on the inner surface of the tube consist of 2 pairs of electrodes. Each of these electrostatic deflecting electrodes has a zig-zag shape from the electron gun towards the target. This zig-zag shape is twisted in the circumferential direction around the axis of the tube and variation rates of this twist amount are different, depending on the position in the axial direction.

摘要翻译： 在电磁聚焦静电型图像拾取管中，形成在管的内表面上的静电偏转电极由2对电极组成。 这些静电偏转电极中的每一个具有从电子枪朝向目标的之字形。 这种锯齿形状围绕管的轴线在圆周方向上扭曲，并且该扭转量的变化率根据轴向方向上的位置而不同。

公开(公告)号：US09434005B2

公开(公告)日：2016-09-06

申请号：US13493617

申请日：2012-06-11

申请人： Hiromi Yokota ,  Ryo Mukai ,  Shinichi Kato ,  Nahomi Hamaguchi

发明人： Hiromi Yokota ,  Ryo Mukai ,  Shinichi Kato ,  Nahomi Hamaguchi

IPC分类号： B22F7/08 ,  C22C1/04 ,  C22C9/00 ,  C22C9/02 ,  F16C33/12 ,  C22C9/04 ,  C22C9/08

CPC分类号： B22F7/08 ,  B22F2998/00 ,  C22C1/0425 ,  C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/08 ,  F16C33/121 ,  F16C2204/12 ,  Y02T10/865 ,  B22F3/10

摘要： A method of producing a Pb-free copper-alloy sliding material containing 1.0 to 15.0% of Sn, 0.5 to 15.0% of Bi and 0.05 to 5.0% of Ag, and Ag and Bi from an Ag—Bi eutectic. If necessary, at least one of 0.1 to 5.0% of Ni, 0.02 to 0.2% P, 0.5 to 30.0% of Zn, and 1.0 to 10.0 mass % of at least one of a group consisting of Fe3P, Fe2P, FeB, NiB and AlN may be added.

摘要翻译： 制备含有Sn：1.0〜15.0％，Bi：0.5〜15.0％，Ag：0.05〜5.0％，Ag-Bi共晶的Ag，Bi的无铅铜合金滑动材料的制造方法。 如果需要，可以使用0.1〜5.0％的Ni，0.02〜0.2％的P，0.5〜30.0％的Zn和1.0〜10.0质量％的Fe 3 P，Fe 2 P，FeB，NiB和 可以添加AlN。

公开(公告)号：US08963050B2

公开(公告)日：2015-02-24

申请号：US13272657

申请日：2011-10-13

申请人： Shinichi Kato ,  Hiroki Kiyama

发明人： Shinichi Kato ,  Hiroki Kiyama

IPC分类号： F27D11/00 ,  H05B7/18 ,  H05B3/68 ,  F26B3/30 ,  F27B17/00 ,  F27D7/02 ,  H01L21/67

CPC分类号： F27B17/0025 ,  F27D7/02 ,  H01L21/67109 ,  H01L21/67115

摘要： A semiconductor wafer having a surface with a thin film formed thereon is transported into a chamber and held by a holder. After an atmosphere provided in the chamber is replaced, flashes of light are directed from flash lamps in a light irradiation part toward the semiconductor wafer to perform a baking process on the thin film. The irradiation of the semiconductor wafer with light from halogen lamps in the light irradiation part also starts at the same time as the irradiation thereof with the flashes of light. The flashes of light emitted for an extremely short period of time and having a high intensity allow the surface temperature of the thin film to rise momentarily. This prevents the occurrence of abnormal grain growth resulting from prolonged baking in the film.

摘要翻译： 将其上形成有薄膜的表面的半导体晶片输送到室中并由保持器保持。 在更换室内提供的气氛之后，将闪光灯从光照射部分中的闪光灯朝向半导体晶片引导，以对薄膜进行烘烤处理。 用光照射部分的卤素灯的光照射半导体晶片也是在与闪光的照射的同时开始的。 在非常短的时间内发射的光并且具有高强度的闪光使得薄膜的表面温度瞬间上升。 这防止了由于膜中长时间烘烤而导致的异常晶粒生长的发生。

公开(公告)号：US08852966B2

公开(公告)日：2014-10-07

申请号：US13609947

申请日：2012-09-11

申请人： Hiroki Kiyama ,  Kazuhiko Fuse ,  Shinichi Kato

发明人： Hiroki Kiyama ,  Kazuhiko Fuse ,  Shinichi Kato

IPC分类号： H01L21/26 ,  H01L21/02 ,  H01L21/268 ,  H01L21/67

CPC分类号： H01L21/2686 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02356 ,  H01L21/67109 ,  H01L21/67115

摘要： A semiconductor wafer, on the surface of which a silicon dioxide base material and an amorphous silicon thin film are formed in this order, is carried into a chamber. An insulated gate bipolar transistor (IGBT) is connected with a power supply circuit to a flash lamp, and the IGBT makes an energization period to the flash lamp to be 0.01 millisecond or more and 1 millisecond or less, consequently making a flash light irradiation time to be 0.01 millisecond or more and 1 millisecond or less. Since a flash heat treatment is performed with a remarkably short flash light irradiation time, the excessive heating of the thin film of amorphous silicon is suppressed and harmful influence such as the exfoliation of the film is prevented.

摘要翻译： 在其表面上依次形成二氧化硅基底材料和非晶硅薄膜的半导体晶片被携带到腔室中。 绝缘栅双极晶体管（IGBT）与电源电路连接到闪光灯，并且IGBT使闪光灯的通电周期为0.01毫秒以上且1毫秒以下，从而使闪光灯照射时间 为0.01毫秒以上且1毫秒以下。 由于以明显短的闪光照射时间进行闪光热处理，因此能够抑制非晶硅薄膜的过度加热，并且防止了膜的剥离等有害影响。

公开(公告)号：US08623750B2

公开(公告)日：2014-01-07

申请号：US13607892

申请日：2012-09-10

申请人： Kazuhiko Fuse ,  Shinichi Kato

发明人： Kazuhiko Fuse ,  Shinichi Kato

IPC分类号： H01L21/3205 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/02356 ,  H01L21/2686 ,  H01L21/28176 ,  H01L21/67115 ,  H01L21/68707 ,  H01L21/68735 ,  H01L29/513 ,  H01L29/517 ,  H01L29/7848

摘要： A film of silicon dioxide is formed on the silicon-germanium layer, and a high dielectric constant film is further formed on the film of silicon dioxide. First irradiation from a flash lamp is performed on the semiconductor wafer to increase the temperature of a front surface of the semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 3 milliseconds to 1 second. Subsequently, second irradiation from the flash lamp is performed to maintain the temperature of the front surface of the semiconductor wafer within a ±25° C. range around the target temperature for a time period in the range of 3 milliseconds to 1 second. This promotes the crystallization of the high dielectric constant film while suppressing the alleviation of distortion in the silicon-germanium layer.

摘要翻译： 在硅 - 锗层上形成二氧化硅膜，并且在二氧化硅膜上进一步形成高介电常数膜。 在半导体晶片上进行来自闪光灯的第一次照射，将半导体晶片的正面的温度从预热温度升温至目标温度，时间范围为3毫秒〜1秒。 随后，执行从闪光灯的第二次照射，以将半导体晶片的前表面的温度保持在目标温度的±25℃范围内，持续3毫秒至1秒的时间段。 这促进了高介电常数膜的结晶，同时抑制了硅 - 锗层中的变形的减轻。

公开(公告)号：US20120225968A1

公开(公告)日：2012-09-06

申请号：US13337581

申请日：2011-12-27

申请人： Tomohito Nakano ,  Toshiyuki Miyabayashi ,  Shinichi Kato ,  Hiroki Nakane ,  Hirotoshi Koyano ,  Yoshinobu Sato ,  Hiroshi Sawada ,  Kenji Kitada

发明人： Tomohito Nakano ,  Toshiyuki Miyabayashi ,  Shinichi Kato ,  Hiroki Nakane ,  Hirotoshi Koyano ,  Yoshinobu Sato ,  Hiroshi Sawada ,  Kenji Kitada

IPC分类号： C09D11/10

CPC分类号： C08F299/06 ,  C08F290/067 ,  C09D11/101

摘要： An ink composition for ink jet providing excellent in the curability based on ultraviolet irradiation in the presence of water or a solvent, the ejection stability with respect to the factors such as dot loss or flight deflection, and the storage stability of ink. Also provided herein is an ink composition for ink jet including: a pigment; a water-soluble organic solvent; a surfactant; at least either of a urethane (meth)acrylate being represented by the following general formula (1) and having a weight average molecular weight of 1,000 to 10,000 and a cross-linked urethane (meth)acrylate having a constitutional unit including the urethane (meth)acrylate; a compound having a radical polymerizable group(s); a photoradical polymerization initiator; and water: A1-O—(CONH—B1—NHCOO—C1—O)n—CONH—B1—NH—COO-D1  (1) where each of A1, B1, C1, D1, and n in formula (1) are described herein.

摘要翻译： 一种用于喷墨的油墨组合物，其在水或溶剂的存在下，基于紫外线照射提供优异的固化性，相对于诸如点损失或飞行偏转等因素的喷射稳定性以及油墨的储存稳定性。 本文还提供了一种用于喷墨的油墨组合物，包括：颜料; 水溶性有机溶剂; 表面活性剂; 氨基甲酸酯（甲基）丙烯酸酯中的至少一种由以下通式（1）表示并具有1,000至10,000的重均分子量和具有包含氨基甲酸酯（甲基）丙烯酸酯的结构单元的交联的聚氨酯（甲基）丙烯酸酯 ）丙烯酸酯; 具有自由基聚合性基团的化合物; 光自由基聚合引发剂; 和水：式（1）中的A1，B1，C1，D1和n各自的A1-O-（CONH-B1-NHCOO-C1-O）n-CONH-B1-NH-COO-D1（1） 在此描述。

公开(公告)号：US08129284B2

公开(公告)日：2012-03-06

申请号：US12732591

申请日：2010-03-26

申请人： Shinichi Kato

发明人： Shinichi Kato

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： F27B17/0025 ,  H01L21/26513 ,  H01L21/2686 ,  H01L21/67103 ,  H01L21/67115 ,  H01L21/67248 ,  H01L21/68742 ,  H01L21/68785 ,  H01L21/68792

摘要： A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. The surface temperature of the silicon substrate implanted with impurities is therefore increased to be higher than that in a case where no thin film is formed, and the sheet resistance value can be thereby decreased. When the semiconductor wafer with the carbon thin film formed thereon is irradiated with flash light in high concentration oxygen atmosphere, since the carbon of the thin film is oxidized to be vaporized, removal of the thin film is performed concurrently with flash heating.

摘要翻译： 在其上注入有杂质的硅衬底的表面上形成碳薄膜的半导体晶片被从闪光灯发射的闪光照射。 吸收闪光灯会导致碳薄膜的温度升高。 因此，注入杂质的硅衬底的表面温度增加到高于不形成薄膜的情况下的表面温度，并且可以降低薄层电阻值。 当在其上形成有碳薄膜的半导体晶片用高浓度氧气氛中的闪光照射时，由于薄膜的碳被氧化以汽化，所以与闪光加热同时进行薄膜的去除。