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1.发明申请公开(公告)号：US20120108077A1
公开(公告)日：2012-05-03
申请号：US13231984
申请日：2011-09-14
IPC分类号： H01L21/316 , H01L21/314 , C23C16/34 , C23C16/458 , C23C16/52 , H01L21/318 , C23C16/455
CPC分类号： C23C16/34 , C23C16/45546 , C23C16/4584 , C23C16/56 , H01L21/28556 , H01L21/28562
摘要： Disclosed is a substrate processing apparatus that includes: a substrate supporting member that supports a substrate; a processing chamber capable of housing the substrate supporting member; a rotating mechanism that rotates the substrate supporting member; a carrying mechanism that carries out the substrate supporting member from the processing chamber; a material gas supply system that supplies material gas into the processing chamber; a nitrogen-containing-gas supply system that supplies nitrogen containing gas into the processing chamber; and a controller that controls the material gas supply system, the nitrogen-containing-gas supply system, the carrying mechanism, and the rotating mechanism, after forming a nitride film on the substrate by using the material gas and the nitrogen containing gas, to carry out the substrate supporting member that supports the substrate while being rotated from the processing chamber.
摘要翻译： 公开了一种基板处理装置，其包括：支撑基板的基板支撑部件; 能够容纳基板支撑构件的处理室; 使所述基板支撑部件旋转的旋转机构; 从所述处理室执行所述基板支撑构件的承载机构; 将原料气体供给到处理室内的原料气体供给系统; 含氮气体供给系统，其向所述处理室供给含氮气体; 以及通过使用原料气体和含氮气体在基板上形成氮化膜之后，控制原料气体供给系统，含氮气体供给系统，搬运机构和旋转机构的控制器， 在从处理室旋转的同时支撑基板的基板支撑构件。
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2.发明申请SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权基板加工装置及制造半导体装置的方法公开(公告)号：US20110186984A1
公开(公告)日：2011-08-04
申请号：US13014419
申请日：2011-01-26
IPC分类号： H01L23/482 , H01L21/00 , C23C16/455 , H01L21/3205
CPC分类号： C23C16/455 , C23C16/301 , C23C16/303 , C23C16/45578 , C23C16/52 , H01L21/00 , H01L21/02186 , H01L21/3205 , H01L23/482 , H01L2924/0002 , H01L2924/00
摘要： Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device which are able to form a conductive film, which is dense, includes a low concentration of source-derived impurities and has low resistivity, at a higher film-forming rate. The substrate processing apparatus includes a processing chamber configured to stack and accommodate a plurality of substrates; a first processing gas supply system configured to supply a first processing gas into the processing chamber; a second processing gas supply system configured to supply a second processing gas into the processing chamber; and a control unit configured to control the first processing gas supply system and the second processing gas supply system. Here, at least one of the first processing gas supply system and the second processing gas supply system includes two nozzles which are vertically arranged in a stacking direction of the substrates and have different shapes, and the control unit is configured to supply at least one of the first processing gas and the second processing gas into the processing chamber through the two nozzles having different shapes when films are formed on the substrates by supplying the first processing gas and the second processing gas into the processing chamber at pulses having different film-forming rates.
摘要翻译： 本发明提供一种能够形成导电膜的基板处理装置和半导体装置的制造方法，所述半导体装置在较高的成膜速率下能够形成致密的导电膜，其包含低浓度源源杂质并具有低电阻率。 基板处理装置包括：处理室，被配置为堆叠并容纳多个基板; 第一处理气体供应系统，被配置为将第一处理气体供应到所述处理室中; 第二处理气体供应系统，被配置为将第二处理气体供应到所述处理室中; 以及控制单元，被配置为控制第一处理气体供应系统和第二处理气体供应系统。 这里，第一处理气体供给系统和第二处理气体供给系统中的至少一个包括沿基板的堆叠方向垂直配置的两个喷嘴，并且具有不同的形状，并且控制单元被配置为提供至少一个 当通过在具有不同成膜速率的脉冲下将第一处理气体和第二处理气体供应到处理室中时，通过具有不同形状的两个喷嘴将第一处理气体和第二处理气体输送到处理室中， 。
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3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS 有权制造半导体器件和衬底加工设备的方法公开(公告)号：US20110183519A1
公开(公告)日：2011-07-28
申请号：US13012320
申请日：2011-01-24
IPC分类号： H01L21/3205 , C23C16/52 , C23C16/455
CPC分类号： H01L21/32051 , C23C16/34 , C23C16/45523 , C23C16/45574 , H01L21/28556 , H01L21/28562
摘要： A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method. The method includes steps of: (a) loading a substrate into a processing chamber; (b) forming a predetermined film on the substrate by simultaneously supplying the first processing gas and the second processing gas into the processing chamber; (c) stopping the supply of the first processing gas and the second processing gas and removing the first processing gas and the second processing gas remaining in the processing chamber; (d) modifying the film formed on the substrate by supplying the second processing gas into the processing chamber after the step (c); and (e) unloading the substrate from the processing chamber, wherein, in the step (b), a time period for supplying the second processing gas into the processing chamber is longer than a time period for supplying the first processing gas into the processing chamber.
摘要翻译： 一种制造半导体器件的方法和基板处理设备，其能够提供比通过常规CVD方法形成的TiN膜更高成膜速率的TiN膜，其生产率高于 TiN膜通过ALD法形成。 该方法包括以下步骤：（a）将衬底装载到处理室中; （b）通过同时将第一处理气体和第二处理气体供应到处理室中在基板上形成预定的膜; （c）停止供应第一处理气体和第二处理气体，并除去残留在处理室中的第一处理气体和第二处理气体; （d）在步骤（c）之后，通过将第二处理气体供应到处理室来改变在基板上形成的膜; 以及（e）从所述处理室卸载所述基板，其中在所述步骤（b）中，用于将所述第二处理气体供应到所述处理室中的时间段比用于将所述第一处理气体供应到所述处理室 。
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4.发明申请公开(公告)号：US20110059600A1
公开(公告)日：2011-03-10
申请号：US12862180
申请日：2010-08-24
IPC分类号： H01L21/443 , B08B5/00
CPC分类号： B08B7/00 , C23C16/4404 , C23C16/4405 , H01L21/28562 , H01L21/67028
摘要： It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
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