公开(公告)号：US4050313A

公开(公告)日：1977-09-27

申请号：US692368

申请日：1976-06-03

申请人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

发明人： Satoshi Shimada ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Ichiro Kimura ,  Michitaka Shimazoe ,  Yukio Takahashi

IPC分类号： G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054

摘要： A semiconductor pressure transducer comprises a circular diaphragm formed of a single crystal semiconductor material, at least a first strain gauge element having a piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in parallel with a predetermined axis which extends transversely of the surface of the diaphragm, at least a second strain gauge element having the piezoresistance effect and formed by injecting an impurity into the diaphragm in a linear region extending in the direction perpendicular to the axis, and means for securing the diaphragm at the outer peripheral portion thereof. The distance between the second strain gauge element and the center of the diaphragm is differed from the distance between the center of the first strain gauge element and the latter.

摘要翻译： 半导体压力传感器包括由单晶半导体材料形成的圆形隔膜，至少第一应变计元件，具有压阻效应，并且通过在与横向延伸的预定轴线平行延伸的线性区域中注入杂质形成。 至少一个具有压电效应的第二应变计元件，并且通过在垂直于该轴线的方向上延伸的线性区域中将杂质注入到隔膜中而形成，以及用于将隔膜固定在外周的装置 部分。 第二应变计元件与隔膜的中心之间的距离与第一应变计元件的中心与后者之间的距离不同。

公开(公告)号：US4173900A

公开(公告)日：1979-11-13

申请号：US883589

申请日：1978-03-06

申请人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

发明人： Masanori Tanabe ,  Satoshi Shimada ,  Motohisa Nishihara ,  Kazuji Yamada ,  Yasumasa Matsuda ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka ,  Yukio Takahashi ,  Katsuya Katohgi ,  Mitsuo Ai

IPC分类号： G01L9/00 ,  H01L29/84 ,  G01L9/06

CPC分类号： G01L9/0054 ,  H01L29/84

摘要： A semiconductor pressure transducer comprising a disc-shaped pressure-responsive diaphragm; a pair of radial strain gauge units having a piezoresistance effect, formed by injecting an impurity in the radial direction in the surface of the diaphragm; and a pair of tangential strain gauge units having a piezoresistance effect, formed by injecting an impurity in the tangential direction in the surface of the diaphragm, wherein the distance from the pair of the radial strain gauge units to the center of the circular diaphragm is greater than the distance from the pair of the tangential strain gauge units to the center of the circular diaphragm.

摘要翻译： 一种半导体压力传感器，包括盘形压力响应膜片; 一对具有压阻效应的径向应变计单元，其通过在所述隔膜的表面中沿径向注入杂质而形成; 以及具有压阻效应的一对切向应变计单元，其通过在隔膜的表面中沿切线注入杂质形成，其中从一对径向应变计单元到圆形隔膜的中心的距离更大 比从一对切向应变计单元到圆形隔膜中心的距离。

公开(公告)号：US4065971A

公开(公告)日：1978-01-03

申请号：US701531

申请日：1976-07-01

申请人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

发明人： Michitaka Shimazoe ,  Kousuke Nakamura ,  Yasuo Matsushita ,  Satoshi Shimada ,  Kazuji Yamada ,  Yukio Takahashi

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/06

CPC分类号： G01L9/0054

摘要： A semiconductor pressure transducer includes a monocrystalline semiconductor diaphragm, the outer edges of which are fixed. When subjected to pressure, the transducer produces radial strains of opposite polarity in a central portion thereof and a portion surrounding the central portion close to the edge of the strain inducing region. The diaphragm contains a plurality of elongated resistances formed of semiconductor material of the same conductivity type which are electrically isolated from the diaphragm, per se. Resistances of an individual set which lie in proximity to one another are combined in the form of a bridge. The longitudinal direction of resistances forming one set of opposing arms of the bridge extend along axes of the same crystal system as the longitudinal direction of the elongated resistances forming the other set of opposing arms of the bridge. However, the longitudinal directions of the separate sets of resistances forming the opposing arms of the bridge lie in directions so that they do not orthogonally intersect each other.

摘要翻译： 半导体压力传感器包括其外边缘固定的单晶半导体膜片。 当经受压力时，换能器在其中心部分产生相反极性的径向应变，并且围绕中心部分的部分靠近应变诱导区域的边缘产生。 隔膜包含由与膜片电气隔离的相同导电类型的半导体材料形成的多个细长电阻。 位于彼此靠近的单个组的电阻以桥的形式组合。 形成桥的一组相对臂的电阻的纵向方向沿与构成桥的另一组相对臂的细长电阻的纵向相同的晶体系的轴线延伸。 然而，形成桥的相对臂的单独的电阻组的纵向方向在方向上，使得它们不会彼此正交相交。

公开(公告)号：US4618844A

公开(公告)日：1986-10-21

申请号：US494075

申请日：1983-05-12

申请人： Yukio Takahashi ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka

发明人： Yukio Takahashi ,  Michitaka Shimazoe ,  Yoshitaka Matsuoka

IPC分类号： H01L29/84 ,  G01L9/00 ,  G01L9/04 ,  G01L1/22

CPC分类号： G01L9/0054

摘要： In a semiconductor pressure transducer in accordance with the present invention, an oxide film is formed on a semiconductor base having a strain gauge resistor element for the purpose of protecting the strain gauge resistor element. Over the oxide film, a conductive metal film is formed which does not overlap with the strain gauge resistor element through said oxide film.

摘要翻译： 在根据本发明的半导体压力传感器中，为了保护应变计电阻元件，在具有应变计电阻元件的半导体基底上形成氧化膜。 在氧化物膜上形成导电金属膜，其不通过所述氧化膜与应变计电阻元件重叠。

公开(公告)号：US5537882A

公开(公告)日：1996-07-23

申请号：US317156

申请日：1994-10-03

申请人： Seiichi Ugai ,  Satoshi Shimada ,  Susumu Murakami ,  Yoshimi Yamamoto ,  Yukio Takahashi ,  Yasuo Maruyama

发明人： Seiichi Ugai ,  Satoshi Shimada ,  Susumu Murakami ,  Yoshimi Yamamoto ,  Yukio Takahashi ,  Yasuo Maruyama

IPC分类号： G01L9/04 ,  G01L9/00 ,  G01L9/06 ,  G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  G01P15/09 ,  H01C10/10

CPC分类号： G01P1/006 ,  G01L9/0054 ,  G01P15/123

摘要： A sensor for detecting physical amount in which a gauge resistance value is made not to change even when a wiring material presents a yield phenomenon by wiring a wiring material Such as aluminum presenting a yield phenomenon by thermal stress in a stress insensitive direction of a piezogauge.

摘要翻译： 用于检测物位量的传感器，即使当布线材料通过在压力计的应力不敏感方向上通过热应力布线布线材料（例如铝）而产生屈服现象时，也不会改变表面电阻值的物理量。

公开(公告)号：US4342231A

公开(公告)日：1982-08-03

申请号：US217025

申请日：1980-12-16

申请人： Yoshimi Yamamoto ,  Yoshitaka Matsuoka ,  Syozo Kasai ,  Yukio Takahashi ,  Takeo Nagata ,  Akira Nagasu ,  Tomomasa Yoshida ,  Satoshi Shimada

发明人： Yoshimi Yamamoto ,  Yoshitaka Matsuoka ,  Syozo Kasai ,  Yukio Takahashi ,  Takeo Nagata ,  Akira Nagasu ,  Tomomasa Yoshida ,  Satoshi Shimada

IPC分类号： G01L9/00 ,  G01L13/02 ,  G01L7/08 ,  G01L9/06

CPC分类号： G01L19/147 ,  G01L13/025 ,  G01L19/0038 ,  G01L19/0645 ,  G01L19/142

摘要： A differential pressure transmitter has a pressure receiving portion and a sensor portion which are constituted from separate parts separably jointed with each other. The sensor portion includes a semiconductor sensor having one side formed with a resistance pattern and the other side which has a thick-walled peripheral portion and a thick-walled central portion. The semiconductor sensor is incorporated in the sensor portion as being supported at the thick-walled peripheral portion thereof. The pressure receiving portion includes seal diaphragms disposed on both sides of the pressure receiving portion and a central diaphragm disposed therein. The semiconductor sensor is arranged such that the side thereof carrying the resistance pattern faces the pressure receiving portion.

摘要翻译： 差压变送器具有压力接收部分和传感器部分，该压力接收部分和传感器部分由可分离地彼此连接的分开的部分构成。 传感器部分包括半导体传感器，其一侧形成有电阻图案，另一侧具有厚壁周边部分和厚壁中心部分。 半导体传感器被并入传感器部分中，被支撑在其厚壁周边部分。 受压部分包括设置在压力接收部分两侧的密封膜片和设置在其中的中心膜片。 半导体传感器被布置成使得其携带电阻图案的一侧面向压力接收部分。

公开(公告)号：US06211772B1

公开(公告)日：2001-04-03

申请号：US09417235

申请日：1997-09-05

申请人： Susumu Murakami ,  Satoshi Shimada ,  Seiichi Ugai ,  Yukio Takahashi ,  Shuichi Shimizu

发明人： Susumu Murakami ,  Satoshi Shimada ,  Seiichi Ugai ,  Yukio Takahashi ,  Shuichi Shimizu

IPC分类号： H01L1010

CPC分类号： G01L9/0054

摘要： A semiconductor composite sensor using a plurality of semiconductor piezoresistive gauge elements connected in series. The piezoresistive elements are separated so that a high potential terminal of one of the resistive elements having the same resistance values and the substrate of the other of the resistive elements will be connected with equal potential values. Potential difference values between semiconductor regions serving as respective resistive elements and the substrates are made equal.

摘要翻译： 一种使用串联连接的多个半导体压阻式元件的半导体复合传感器。 压阻元件被分离，使得具有相同电阻值的电阻元件之一的高电位端子和另一个电阻元件的衬底将以相等的电势值连接。 使作为各个电阻元件的半导体区域和基板之间的电位差值相等。

公开(公告)号：US08643145B2

公开(公告)日：2014-02-04

申请号：US13414651

申请日：2012-03-07

申请人： Yukio Takahashi

发明人： Yukio Takahashi

IPC分类号： H01L29/00 ,  H01L21/02

CPC分类号： H01L27/0802 ,  H01L27/0207 ,  H01L27/0288 ,  H01L28/20

摘要： A semiconductor device including a substrate, an insulation film being embedded into the substrate and having multiple openings, multiple dummy diffusion layers formed in the substrate and located in the openings, multiple resistance elements being formed over the insulation film so as not to overlap the dummy diffusion layers in a plan view in a resistance element forming region and extending in a first direction, and multiple dummy resistance elements being formed over the insulation film and the dummy diffusion layers and extending in the first direction in the resistance element forming region, in which each of the dummy resistance elements overlaps at least two dummy diffusion layers aligning in a second direction perpendicular to the first direction in a plane horizontal to the substrate in a plan view.

摘要翻译： 一种半导体器件，包括衬底，绝缘膜被嵌入到所述衬底中并具有多个开口，在所述衬底中形成并位于所述开口中的多个虚拟扩散层，在所述绝缘膜上形成多个电阻元件，以便不与所述虚拟 在电阻元件形成区域中的平面图中的扩散层并沿第一方向延伸，并且多个虚设电阻元件形成在绝缘膜和虚拟扩散层之上并在电阻元件形成区域中沿第一方向延伸，其中 在平面图中，每个虚拟电阻元件至少两个在与基板水平的平面中的垂直于第一方向的第二方向上对准的虚拟扩散层。

公开(公告)号：US08536843B2

公开(公告)日：2013-09-17

申请号：US13109113

申请日：2011-05-17

申请人： Yukio Takahashi

发明人： Yukio Takahashi

IPC分类号： G05F1/00

CPC分类号： H02M3/1584 ,  H02M1/4225 ,  H02M2003/1586 ,  Y02B70/126

摘要： This invention offers a power supply circuit that is capable of improving a power factor as well as reducing a ripple current of an input/output of the power supply circuit due to switching of a switching device. The power supply circuit is provided with a first power supply circuit including first and second switching devices, a second power supply circuit including third and fourth switching devices and a switching control circuit. The switching control circuit controls the switching devices so that the first switching device and the third switching device are turned on and off at timings different from each other when an alternating current voltage from an alternating current power supply is positive, and the second switching device and the fourth switching device are turned on and off at timings different from each other when the alternating current voltage is negative.

摘要翻译： 本发明提供一种电源电路，其能够改善功率因数以及由于切换装置的切换而减小电源电路的输入/输出的纹波电流。 电源电路设置有包括第一和第二开关装置的第一电源电路，包括第三和第四开关装置的第二电源电路和开关控制电路。 开关控制电路控制开关装置，使得当来自交流电源的交流电压为正时，第一开关装置和第三开关装置在彼此不同的定时导通和关断，并且第二开关装置和 当交流电压为负时，第四开关器件在彼此不同的定时导通和截止。

公开(公告)号：US08536680B2

公开(公告)日：2013-09-17

申请号：US12457037

申请日：2009-05-29

申请人： Yukio Takahashi ,  Kousuke Yoshida

发明人： Yukio Takahashi ,  Kousuke Yoshida

IPC分类号： H01L27/102

CPC分类号： H01L27/0259

摘要： An electrostatic discharge protection circuit has a bipolar transistor which includes a first diffusion layer of a first conductive type connected with a first power supply and functioning as a base; a second diffusion layer of a second conductive type connected with a second power supply and functioning as a collector; and a third diffusion layer of the second conductive type connected with an input/output pad and functioning as an emitter. An area of a first region of the third diffusion layer which is opposite to the first diffusion layer is larger than an area of a second region of the second diffusion layer which is opposite to the first diffusion layer.