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    Process for producing nanostructure of mixed film of Al, Si, and/or Ge
    5.
    发明授权
    Process for producing nanostructure of mixed film of Al, Si, and/or Ge 失效
    制备Al，Si和/或Ge混合膜的纳米结构的方法

    公开(公告)号：US07517554B2

    公开(公告)日：2009-04-14

    申请号：US11339627

    申请日：2006-01-26

    申请人： Tatsuya Saito ,  Tohru Den ,  Kazuhiko Fukutani ,  Aya Imada

    发明人： Tatsuya Saito ,  Tohru Den ,  Kazuhiko Fukutani ,  Aya Imada

    IPC分类号： C23C8/00

    CPC分类号： C23C14/5873 ,  B82Y30/00 ,  C23C14/165

    摘要： A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of SixGe1-x (0≦X≦1), and cylindrical portions mainly composed of aluminum having a diameter of not larger 30 nm in the matrix. In the process, the mixed film is formed at a film-forming rate of not higher than 150 nm/min.

    摘要翻译： 提供一种制造纳米结构的方法，其能够通过成膜条件控制孔径和孔间隔。 该方法产生相对于铝含有20〜70原子％含有硅和锗的铝 - 硅 - 锗混合膜的纳米结构，该混合膜由组成为主要由硅和锗组成的基体构成 SixGe1-x（0 <= X <= 1）的比例，以及主要由直径不大于30nm的铝构成的圆筒部。 在该过程中，以不高于150nm / min的成膜速度形成混合膜。

    Magnetic device
    9.
    发明授权
    Magnetic device 失效
    磁性装置

    公开(公告)号：US07349242B2

    公开(公告)日：2008-03-25

    申请号：US10968902

    申请日：2004-10-21

    申请人： Tohru Den

    发明人： Tohru Den

    IPC分类号： G11C11/00 ,  G11C11/14 ,  G11C11/15

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11C11/16 ,  H01F10/324 ,  Y10T428/1114

    摘要： A magnetic device has a layer containing fine pores and having wirings on both faces of the layer formed on a substrate, wherein at least a part of the pores are filled with a layered column formed by stacking magnetic layers and nonmagnetic layers alternately, and at least a part of the pores filled with a conductive column as writing wires for writing into the magnetic layers in the adjacent pores. The fine pores may be nano-holes of alumina formed by anodic oxidation. A part of the pores may serve to intercept a magnetic field. The magnetic layer may contain Co, and the nonmagnetic layer and/or the writing wire may contain Cu. The pores may be arranged in a honeycomb arrangement or a rectangular array. The ratio of the sectional area S (cm2) of the pore and the length (cm) of the pore satisfy the relation: 105 105.

    摘要翻译： 磁性器件具有含有细孔的层，并且在形成在衬底上的层的两个表面上具有布线，其中至少部分孔填充有通过交替层叠磁性层和非磁性层而形成的层状结构，并且至少 填充有导电柱的孔的一部分作为用于写入相邻孔中的磁性层的书写线。 细孔可以是通过阳极氧化形成的氧化铝的纳米孔。 一部分孔可用于截取磁场。 磁性层可以含有Co，非磁性层和/或书写线可以含有Cu。 孔可以布置成蜂窝布置或矩形阵列。 孔的截面积S（cm 2）与孔的长度（cm）的比例满足关系式：10 10 < SUP> 5 。

    Structure having pores, device using the same, and manufacturing methods therefor
    10.
    发明授权
    Structure having pores, device using the same, and manufacturing methods therefor 失效
    具有孔的结构，使用其的装置及其制造方法

    公开(公告)号：US07319069B2

    公开(公告)日：2008-01-15

    申请号：US11354813

    申请日：2006-02-16

    申请人： Tohru Den ,  Tatsuya Iwasaki

    发明人： Tohru Den ,  Tatsuya Iwasaki

    IPC分类号： H01L21/44

    CPC分类号： B81C1/00031 ,  B81B1/002 ,  B81B2201/0214 ,  H01L43/12 ,  Y10S977/781 ,  Y10S977/893

    摘要： A minute structure is provided in which electroconductive paths are only formed in nanoholes, and a material is filled in the nanoholes, which are disposed in a specific area, by using the electroconductive paths. The minute structure comprising pores comprises a) a substrate, b) a plurality of electroconductive layers formed on a surface of the substrate, c) a layer primarily composed of aluminum oxide covering the plurality of electroconductive layers and a surface of the substrate where no electroconductive layer is formed, and d) a plurality of pores formed in the layer primarily composed of aluminum oxide, in which the pores are disposed above the electroconductive layers and the surface of the substrate where no electroconductive layers is formed, with a part of the layer primarily composed of aluminum oxide provided under the bottoms of the pores, and in which the layer primarily composed of aluminum oxide provided between the electroconductive layer and the bottoms of the pores disposed above the electroconductive layer comprises a material forming the electroconductive layer.

    摘要翻译： 提供了一种微结构，其中导电路径仅形成在纳米孔中，并且通过使用导电路径将材料填充在设置在特定区域中的纳米孔中。 包括孔的微小结构包括a）基底，b）形成在基底表面上的多个导电层，c）主要由覆盖多个导电层的氧化铝组成的层和不具有导电性的基底的表面 层，以及d）主要由氧化铝构成的层中形成的多个孔，其中孔设置在导电层上方和不形成导电层的基板的表面上，其中一部分层 主要由设置在孔底部的氧化铝组成，其中主要由设置在导电层和设置在导电层上方的孔的底部之间的氧化铝组成的层包括形成导电层的材料。