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    MAGNETORESISTIVE MEMORY APPARATUS
    1.
    发明申请
    MAGNETORESISTIVE MEMORY APPARATUS 失效
    磁记忆体设备

    公开(公告)号：US20050072997A1

    公开(公告)日：2005-04-07

    申请号：US10788319

    申请日：2004-03-01

    申请人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    发明人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08

    CPC分类号： B82Y10/00 ,  H01L27/228

    摘要： A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.

    摘要翻译： 一种具有半导体衬底的磁阻存储器件，具有多个相交的非接触字线和构成矩阵的位线，以及多个铁磁隧道结器件，位于多条线的每个交叉点附近，每个接合器件都具有 通过绝缘层，具有可变磁化方向的自由层和具有固定磁化方向的固定磁化层彼此依次通过磁化信息在由提供给线路的磁化电流选择的交点处被写入存储器件中，磁化信息由 检测由于隧道效应而流过存储器件的电流的电阻方差。 多个接合装置偏离多个线路的交叉点，并且线路之间的非接触自由层延伸部分仅从自由层延伸，以缩短其间的间隔。

    Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head
    2.
    发明授权
    Magnetic sensor and production method thereof, ferromagnetic tunnel junction element, and magnetic head 失效
    磁传感器及其制造方法，铁磁隧道结元件和磁头

    公开(公告)号：US06741434B1

    公开(公告)日：2004-05-25

    申请号：US09704010

    申请日：2000-11-01

    申请人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    发明人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    IPC分类号： G11B5127

    CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/06 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268

    摘要： A magnetic sensor which comprises (1) a supporting substrate, (2) a ferromagnetic tunnel junction element which has a first magnetic layer on the supporting substrate, a tunnel insulation layer on the first magnetic layer, the tunnel insulation layer comprising aluminum oxide obtained by oxidizing an aluminum film formed on the first magnetic layer by sputtering using an aluminum target having a purity of 99.999% or more, and a second magnetic layer on the tunnel insulation layer, and (3) a converter element converting a change in a magnetic field to a change in resistance. Alternatively, as the ferromagnetic tunnel junction element of (2), one whose tunnel junction has a voltage-resistance characteristic which is asymmetric in the direction of the applied voltage is used. The asymmetric voltage-resistance characteristic may be obtained by heat treatment of a film of the insulation layer material, changing a partial pressure of oxygen in an atmosphere for the formation of insulation layer of an oxide, use of two or more target material for the formation of film and a moving substrate, and the like.

    摘要翻译： 一种磁传感器，包括：（1）支撑基板，（2）在所述支撑基板上具有第一磁性层的铁磁隧道结元件，在所述第一磁性层上的隧道绝缘层，所述隧道绝缘层包括由 使用纯度为99.999％以上的铝靶通过溅射对形成在第一磁性层上的铝膜和隧道绝缘层上的第二磁性层进行氧化，以及（3）转换磁场变化的转换元件 改变阻力。 或者，作为（2）的铁磁隧道结元件，使用其隧道结具有在施加电压方向上不对称的耐电压特性的铁磁隧道结元件。 可以通过对绝缘层材料的膜进行热处理，改变用于形成氧化物绝缘层的气氛中的氧气的分压来获得不对称的电压特性，使用两种或更多种用于形成的靶材料 的膜和移动的基板等。

    Magnetic sensor, magnetic head, magnetic encoder and hard disk device
    5.
    发明授权
    Magnetic sensor, magnetic head, magnetic encoder and hard disk device 失效
    磁传感器，磁头，磁编码器和硬盘设备

    公开(公告)号：US07199985B1

    公开(公告)日：2007-04-03

    申请号：US09581468

    申请日：2000-06-12

    申请人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    发明人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    IPC分类号： G11B5/33

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/06 ,  G11B5/012 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A magnetic sensor including a ferromagnetic tunnel junction, comprises a free layer 10 a magnetic direction of which freely rotates, and a barrier layer 11 formed on the free layer and reduces a thickness in a first region, the free layer in a region corresponding to the first region functioning as a sensor portion for sensing an external magnetic field. Such magnetic sensor can provide magnetic sensors, magnetic heads and magnetic encoders having high sensitivity. Furthermore, such magnetic sensor can provide magnetic heads which are adaptable to high recording density of magnetic storage mediums, and hard disk devices of large storage capacities using the magnetic heads.

    摘要翻译： 包括铁磁隧道结的磁传感器包括其自由旋转的磁方向的自由层10和形成在自由层上的阻挡层11，并减小第一区域中的厚度，对应于第一区域的区域中的自由层 第一区域用作感测外部磁场的传感器部分。 这种磁传感器可以提供具有高灵敏度的磁传感器，磁头和磁编码器。 此外，这种磁传感器可以提供适用于磁存储介质的高记录密度的磁头和使用磁头的大存储容量的硬盘装置。

    Magnetoresistive memory apparatus
    6.
    发明授权
    Magnetoresistive memory apparatus 失效
    磁阻存储装置

    公开(公告)号：US06903400B2

    公开(公告)日：2005-06-07

    申请号：US10788319

    申请日：2004-03-01

    申请人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    发明人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    IPC分类号： H01L27/105 ,  H01L21/8246 ,  H01L21/8247 ,  H01L27/22 ,  H01L29/76 ,  H01L31/062 ,  H01L43/08

    CPC分类号： B82Y10/00 ,  H01L27/228

    摘要： A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.

    摘要翻译： 一种具有半导体衬底的磁阻存储器件，具有多个相交的非接触字线和构成矩阵的位线，以及多个铁磁隧道结器件，位于多条线的每个交叉点附近，每个接合器件都具有 通过绝缘层，具有可变磁化方向的自由层和具有固定磁化方向的固定磁化层彼此依次通过磁化信息在由提供给线路的磁化电流选择的交点处被写入存储器件中，磁化信息由 检测由于隧道效应而流过存储器件的电流的电阻方差。 多个接合装置偏离多个线路的交叉点，并且线路之间的非接触自由层延伸部分仅从自由层延伸，以缩短其间的间隔。

    Disk drive with read IC chip and write IC chip mounted respectively on suspension and arm
    7.
    发明授权
    Disk drive with read IC chip and write IC chip mounted respectively on suspension and arm 有权
    磁盘驱动器带读取IC芯片和写IC芯片分别安装在悬架和臂上

    公开(公告)号：US07050268B2

    公开(公告)日：2006-05-23

    申请号：US10720996

    申请日：2003-11-24

    申请人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    发明人： Hideyuki Kikuchi ,  Masashige Sato ,  Kazuo Kobayashi

    IPC分类号： G11B5/48 ,  G11B21/16

    CPC分类号： G11B5/486

    摘要： A dedicated read IC chip is mounted on a head suspension. The dedicated read IC chip is located closer to a read element. A stray capacitance of a wiring can be reduced. Even if the electric resistance value of the read element increases, the magnetic information data of a higher density can be read out. Moreover, the dedicated read IC chip generates little heat. Even if the dedicated read IC chip is located on the head suspension, an excessive heat cannot be transmitted to the head suspension from the dedicated read IC chip. The mechanical properties and shape of the head suspension can be maintained as expected.

    摘要翻译： 专用的读取IC芯片安装在磁头悬架上。 专用读取IC芯片位于更靠近读取元件的位置。 可以减少布线的杂散电容。 即使读取元件的电阻值增加，也可以读出较高密度的磁信息数据。 此外，专用读取IC芯片产生的热量很少。 即使专用读取IC芯片位于磁头悬架上，也不能从专用读取IC芯片向头部悬架传递过多的热量。 头部悬浮液的机械性能和形状可按预期保持。

    Magnetic element and magnetic memory device
    8.
    发明授权
    Magnetic element and magnetic memory device 失效
    磁性元件和磁性存储器件

    公开(公告)号：US06404672B2

    公开(公告)日：2002-06-11

    申请号：US09732030

    申请日：2000-12-07

    申请人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    发明人： Masashige Sato ,  Hideyuki Kikuchi ,  Kazuo Kobayashi

    IPC分类号： G11C1115

    CPC分类号： B82Y25/00 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3272

    摘要： A magnetic element includes a first ferromagnetic layer, an insulating layer, and a second ferromagnetic layer laminated in this order. At least one of the first and second ferromagnetic layers includes a lower ferromagnetic layer, a non-magnetic conductive layer, and an upper ferromagnetic layer laminated in this order. By changing the kind or the composition of material of the upper and lower ferromagnetic layers, the amount of magnetization of each layer can be controlled to reduce affection by magnetostatic coupling. Changeability of magnetized direction of the first or second ferromagnetic layer can be regulated thereby. This realizes an improvement of sensitivity.

    摘要翻译： 磁性元件包括依次层压的第一铁磁层，绝缘层和第二铁磁层。 第一和第二铁磁层中的至少一个包括依次层叠的下铁磁层，非磁性导电层和上铁磁层。 通过改变上下铁磁层的材料的种类或组成，可以控制各层的磁化量，以减少静磁耦合的影响。 可以调节第一或第二铁磁层的磁化方向的可变性。 这实现了灵敏度的提高。