利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

21 条记录 (耗时 0.023 秒)

    Semiconductor acceleration sensor
    1.
    发明授权
    Semiconductor acceleration sensor 失效
    半导体加速度传感器

    公开(公告)号：US5894144A

    公开(公告)日：1999-04-13

    申请号：US961427

    申请日：1997-10-30

    申请人： Masatomo Mori ,  Takashi Kunimi ,  Masahiro Nezu ,  Tadao Matsunaga ,  Rokurou Naya ,  Shougo Suzuki

    发明人： Masatomo Mori ,  Takashi Kunimi ,  Masahiro Nezu ,  Tadao Matsunaga ,  Rokurou Naya ,  Shougo Suzuki

    IPC分类号： G01P15/00 ,  G01P15/08 ,  G01P15/135 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/0802 ,  G01P15/135 ,  Y10S73/01

    摘要： In a semiconductor acceleration sensor, a weight and thin beam parts adjacent to the weight are formed on a substrate, a moving electrode is formed on the weight, and a fixed electrode is formed at a position of the other substrate opposed to the moving electrode. Both the electrodes come in contact with each other and conduct as a result of acceleration on the weight, whereby the semiconductor acceleration sensor operates. The fixed electrode or the moving electrode is formed with a projection toward the opposed electrode and the projection and the electrode come in contact with each other and conduct by action of acceleration with a predetermined spacing held between both the electrodes for preventing occurrence of chattering caused by the electrostatic attraction force between both the electrodes.

    摘要翻译： 在半导体加速度传感器中，在基板上形成与重物相邻的重量和薄梁部分，在重物上形成移动电极，在与移动电极相对的另一基板的位置形成固定电极。 两个电极彼此接触并作为重量加速的结果导通，由此半导体加速度传感器工作。 固定电极或移动电极形成有朝向相对电极的突起，并且突起和电极彼此接触，并且通过加速度的作用以两个电极之间保持的预定间隔进行传导，以防止由于两个电极之间的颤动而发生颤动 两电极之间的静电吸引力。

    Acceleration sensor
    2.
    发明授权
    Acceleration sensor 失效
    加速度传感器

    公开(公告)号：US5748567A

    公开(公告)日：1998-05-05

    申请号：US721579

    申请日：1996-09-25

    申请人： Masatomo Mori ,  Masahiro Nezu ,  Tadao Matsunaga ,  Rokurou Naya ,  Shougo Suzuki ,  Akihiro Azuma

    发明人： Masatomo Mori ,  Masahiro Nezu ,  Tadao Matsunaga ,  Rokurou Naya ,  Shougo Suzuki ,  Akihiro Azuma

    IPC分类号： G01P15/02 ,  B81B3/00 ,  G01P15/12 ,  H01L29/84 ,  H04R19/00 ,  H04R17/00

    CPC分类号： H04R19/005

    摘要： An acceleration sensor is based on a semiconductor technique which is suitable for mass production. The resulting acceleration sensor is small in size and high in precision. The acceleration sensor includes a stationary section, an acting section to which a force is applied in response to acceleration, a flexible section through which the stationary section is coupled to the acting section, a plurality of distortion sensing elements coupled to the flexible section, a first weight having a bottomed hole which is gradually smaller in width towards the bottom of the hole, the first weight being coupled to the acting section and a second weight, greater in specific gravity than the first weight, coupled to the bottom of the hole of the first weight.

    摘要翻译： 一种加速度传感器是基于适合批量生产的半导体技术。 所得到的加速度传感器尺寸小，精度高。 加速度传感器包括固定部分，响应于加速度施加力的作用部分，固定部分连接到作用部分的柔性部分，耦合到柔性部分的多个失真感测元件， 第一重物具有朝向孔的底部逐渐变小的有底孔，第一重物联接到作用部分，并且第二重物比第一重物更大，该第二重物与第一重物重合，该第二重物联接到孔的底部 第一个重量。

    Acceleration sensor
    3.
    发明授权
    Acceleration sensor 失效
    加速度传感器

    公开(公告)号：US5866817A

    公开(公告)日：1999-02-02

    申请号：US686202

    申请日：1996-07-25

    申请人： Masatomo Mori ,  Masahiro Nezu ,  Rokurou Naya ,  Shougo Suzuki

    发明人： Masatomo Mori ,  Masahiro Nezu ,  Rokurou Naya ,  Shougo Suzuki

    IPC分类号： G01L1/18 ,  G01P15/08 ,  G01P15/12 ,  G01P15/18 ,  H01L29/84

    CPC分类号： G01P15/0802 ,  G01P15/123 ,  G01P2015/084

    摘要： A small-sized, reliable, low-cost acceleration sensor includes a working mechanism having a large joint surface. In this respect, an acceleration sensor 1 is arranged so that a diaphragm portion 2D is formed on a (100) face of a plate of single crystal silicon. The four corner portions of the joint surface 2A of a square frame are expanded in the center direction of the plate of single crystal silicon so as to form expanded portions 2B. Moreover, the (100) face of the square plate of single crystal silicon is covered with a mask having at least an octagonal opening 10E before being subjected to anisotropic etching, so that the expanded portions 2B directed to the center portion are formed in the respective four corner portions of the plate of single crystal silicon.

    摘要翻译： 小型，可靠，低成本的加速度传感器包括具有大接头表面的工作机构。 在这方面，加速度传感器1被布置成使得在单晶硅板的（100）面上形成膜部分2D。 方框的接合面2A的四个角部在单晶硅板的中心方向扩展，形成扩张部2B。 此外，在进行各向异性蚀刻之前，用具有至少八边形开口10E的掩模覆盖单晶硅的正方形板的（100）面，使得朝向中心部分的扩大部分2B形成为相应的 单晶硅板的四个角部分。

    Semiconductor acceleration sensor and its self-diagnosing method
    4.
    发明授权
    Semiconductor acceleration sensor and its self-diagnosing method 失效
    半导体加速度传感器及其自诊断方法

    公开(公告)号：US06230564B1

    公开(公告)日：2001-05-15

    申请号：US09367312

    申请日：1999-08-11

    申请人： Tadao Matsunaga ,  Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Masayoshi Esashi

    发明人： Tadao Matsunaga ,  Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Masayoshi Esashi

    IPC分类号： G01P1500

    CPC分类号： H01H35/142 ,  G01P15/0802 ,  G01P15/135 ,  H01H1/0015 ,  H01H1/0036

    摘要： The invention provides a semiconductor acceleration sensor which is small in size, light in weight, simple in manufacture, low in manufacturing cost, and high in accuracy, and which, with a switch-on time set to a predetermined value, is stable in operation. In a semiconductor acceleration sensor in which a central board 1 having a central contact section 11, and outside boards 2 at least one of which has an outside contact section 21 are stacked; the central board 1 has a weight 12 near the central contact section 11, and the outside board 2 having the outside contact section 21 has a weight confronting section 11 which confronts with the weight 12, for squeezed damping effect.

    摘要翻译： 本发明提供一种尺寸小，重量轻，制造简单，制造成本低，精度高的半导体加速度传感器，其接通时间设定为规定值，操作稳定 在具有中央接触部11的中央板1和至少其中一个具有外部接触部21的外部板2的半导体加速度传感器中， 中心板1在中心接触部分11附近具有重物12，具有外接触部分21的外板2具有与重物12相对的重量面对部分11，用于挤压阻尼作用。

    Acceleration sensor and method for manufacturing thereof
    6.
    发明授权
    Acceleration sensor and method for manufacturing thereof 失效
    加速度传感器及其制造方法

    公开(公告)号：US5987988A

    公开(公告)日：1999-11-23

    申请号：US905724

    申请日：1997-08-04

    申请人： Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Tadao Matsunaga

    发明人： Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Tadao Matsunaga

    IPC分类号： G01P15/00 ,  G01P15/135 ,  H01H1/00 ,  H01H35/14 ,  H01L29/84

    CPC分类号： H01H35/14 ,  G01P15/135 ,  G01P15/18 ,  H01H1/0036

    摘要： An acceleration sensor includes a first substrate, a second substrate and a third substrate. The second substrate has a through-hole, a first contact formed on an inner surface of the through-hole, and a first bonding pad connected to the first contact. An electrically conductive ball is accommodated in the through-hole. The third substrate has a recess, a second contact formed in the recess contacting the bottom of the electrically conductive ball, and a second bonding pad connected to the second contact.

    摘要翻译： 加速度传感器包括第一基板，第二基板和第三基板。 第二基板具有通孔，形成在通孔的内表面上的第一触点和连接到第一触点的第一焊盘。 导电球容纳在通孔中。 第三基板具有凹部，形成在与导电球的底部接触的凹部中的第二触点和连接到第二触点的第二焊盘。

    Semiconductor acceleration sensor using semiconductor microworking technology
    7.
    发明授权
    Semiconductor acceleration sensor using semiconductor microworking technology 失效
    半导体加速度传感器采用半导体微加工技术

    公开(公告)号：US5962789A

    公开(公告)日：1999-10-05

    申请号：US950137

    申请日：1997-10-14

    申请人： Tadao Matsunaga ,  Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori

    发明人： Tadao Matsunaga ,  Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori

    IPC分类号： G01P15/125 ,  G01P15/08 ,  G01P15/135 ,  H01L29/84

    CPC分类号： G01P15/0802 ,  G01P15/135

    摘要： A semiconductor acceleration sensor comprising a rectangular semiconductor substrate on the moving electrode side and a rectangular semiconductor substrate on the fixed electrode side laminated on each other, the moving electrode side substrate being formed with a heavy weight and a thin cantilever, a moving electrode being provided on the heavy weight, a first electrostatic attraction electrode being provided on the cantilever, the fixed electrode side substrate being formed with a fixed electrode at a position opposed to the moving electrode and a second electrostatic attraction electrode at a position opposed to the electrostatic attraction electrode. The first and second electrostatic attraction electrodes are placed facing each other. A predetermined spacing is provided between the electrostatic attraction electrodes and a predetermined voltage is applied therebetween.

    摘要翻译： 一种半导体加速度传感器，其包括在移动电极侧的矩形半导体衬底和固定电极侧的矩形半导体衬底，所述移动电极侧衬底形成为重量轻的悬臂，设置有移动电极 在重物上，设置在悬臂上的第一静电吸引电极，固定电极侧基板在与移动电极相对的位置处形成有固定电极，在与静电吸引电极相对的位置形成第二静电吸引电极 。 第一和第二静电吸引电极彼此面对放置。 在静电吸引电极之间设置预定的间隔，并且在其间施加预定的电压。

    Auxiliary acceleration sensor device for an air bag system
    8.
    发明授权
    Auxiliary acceleration sensor device for an air bag system 失效
    用于气囊系统的辅助加速度传感器装置

    公开(公告)号：US06353782B1

    公开(公告)日：2002-03-05

    申请号：US09323930

    申请日：1999-06-02

    申请人： Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Kazuya Kato

    发明人： Takashi Kunimi ,  Masahiro Nezu ,  Masatomo Mori ,  Kazuya Kato

    IPC分类号： B60R2132

    CPC分类号： B60R21/0132 ,  B60R2021/0009 ,  B60R2021/01027 ,  Y10T307/799

    摘要： To improve a response rate and an impact detection precision of an auxiliary acceleration sensor device for an air bag system, an auxiliary acceleration sensor device includes a longitudinal G sensor for sensing a longitudinal acceleration G of a vehicle, and lateral G sensor for sensing a lateral acceleration G of the vehicle. The longitudinal G sensor includes a constant current source circuit, a detector portion for outputting an electrical signal representative of a longitudinal acceleration G, and an amplifier portion for amplifying the signal received from the detecting portion. The comparator includes comparing elements that compare the voltage values corresponding to longitudinal threshold values Tf1 to Tf4 of the longitudinal acceleration G with an output signal of the amplifier portion. Lateral G sensor includes a constant current source circuit, a detector portion for outputting an electrical signal representative of a lateral acceleration G, and an amplifier portion for amplifying the signal received from the detecting portion. Comparator means includes comparing elements which compare the voltages corresponding to lateral threshold values Ts1 to Ts4 of the lateral acceleration G with the output signal of the amplifier portion. An OR circuit coupled for reception with the comparator means outputs a signal to a main controller of an air bag control system when predetermined conditions are satisfied.

    摘要翻译： 为了提高用于气囊系统的辅助加速度传感器装置的响应速度和冲击检测精度，辅助加速度传感器装置包括用于感测车辆的纵向加速度G的纵向G传感器和用于感测侧向 车辆的加速度G。 纵向G传感器包括恒流源电路，用于输出表示纵向加速度G的电信号的检测器部分和用于放大从检测部分接收的信号的放大器部分。 比较器包括比较与纵向加速度G的纵向阈值Tf1至Tf4相对应的电压值与放大器部分的输出信号的元件。 横向G传感器包括恒流源电路，用于输出表示横向加速度G的电信号的检测器部分和用于放大从检测部分接收的信号的放大器部分。 比较器装置包括比较与横向加速度G的横向阈值Ts1至Ts4相对应的电压与放大器部分的输出信号进行比较的元件。 与比较器装置相连接的OR电路当满足预定条件时，将信号输出到气囊控制系统的主控制器。

    Screening GPR12 receptor for substances having Nesfatin-1-like action, or which regulate Nesfatin-1 action
    10.
    发明授权
    Screening GPR12 receptor for substances having Nesfatin-1-like action, or which regulate Nesfatin-1 action 失效
    筛选具有Nesfatin-1样作用或调节Nesfatin-1作用的物质的GPR12受体

    公开(公告)号：US08221990B2

    公开(公告)日：2012-07-17

    申请号：US12257351

    申请日：2008-10-23

    申请人： Masatomo Mori ,  Hiroshi Eguchi

    发明人： Masatomo Mori ,  Hiroshi Eguchi

    IPC分类号： G01N33/53 ,  G01N33/567 ,  G01N33/566 ,  C12Q1/02

    CPC分类号： G01N33/566 ,  G01N2333/726 ,  G01N2500/04 ,  G01N2500/10

    摘要： An object of the present invention is to identify a Nesfatin-1 receptor, and to provide a method for screening or designing a Nesfatin-1-action regulating substance or a Nesfatin-1-like action substance using the Nesfatin-1 receptor.A method for screening a Nesfatin-1-like action substance comprising steps of making a test substance act on a receptor protein selected from the group consisting of GPR3, GPR6 and GPR12, and of identifying the Nesfatin-1-like action substance based on a change of Nesfatin-1 action.

    摘要翻译： 本发明的目的是鉴定Nesfatin-1受体，并提供使用Nesfatin-1受体筛选或设计Nesfatin-1作用调节物质或Nesfatin-1样作用物质的方法。 一种筛选Nesfatin-1样作用物质的方法，包括使测试物质作用于选自GPR3，GPR6和GPR12的受体蛋白质的步骤，以及基于以下步骤鉴定Nesfatin-1样作用物质 改变Nesfatin-1的作用。