公开(公告)号：US09551062B2

公开(公告)日：2017-01-24

申请号：US14775419

申请日：2013-03-28

申请人： Masatoshi Sakurai ,  Mei Wang ,  Toshihiro Ohchi ,  Yuji Sutou ,  Junichi Koike ,  Shoko Komiyama

发明人： Masatoshi Sakurai ,  Mei Wang ,  Toshihiro Ohchi ,  Yuji Sutou ,  Junichi Koike ,  Shoko Komiyama

IPC分类号： C23C14/06

CPC分类号： C23C14/0676 ,  C23C14/06 ,  C23C14/0635 ,  C23C14/0641

摘要： A tool hard film that is to be disposed as coating on a surface of a tool, the tool hard film being a TiCrMoWV oxycarbide, oxynitride, or oxycarbonitride having a phase with a NaCl-type crystal structure as a main phase, the oxycarbide, oxynitride, or oxycarbonitride having fine crystals due to introduction of oxygen.

摘要翻译： 作为工具表面上涂布的工具硬质膜，工具硬质膜是具有NaCl型晶体结构相作为主相的TiCrMoWV碳氧化物，氧氮化物或碳氮氧化物，氧化碳，氧氮化物 或由于引入氧而具有细晶体的碳氮氧化物。

公开(公告)号：US10227687B2

公开(公告)日：2019-03-12

申请号：US15038839

申请日：2013-11-26

申请人： Mei Wang ,  Masatoshi Sakurai ,  Yuji Sutou ,  Junichi Koike

发明人： Mei Wang ,  Masatoshi Sakurai ,  Yuji Sutou ,  Junichi Koike

IPC分类号： C23C14/06 ,  C23C14/00 ,  B23C5/28 ,  C23C28/04 ,  C23C28/00 ,  C23C14/34 ,  C23C14/50

摘要： A hard lubrication film, with which a surface of a base material is coated, has two or more alternately laminated layers that are one or more A-layers made of (CraMobWcVdBe)1−x−yCxNy and one or more B-layers made of (CraMobWcVdBe)1−x−y−zCxNyOz. Atom ratios a, b, c, d, e=1−a−b−c−d, x+y, and y related to A-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0.3≤x+y≤0.6, and 0≤y≤0.6, respectively. Atom ratios a, b, c, d, e=1−a−b−c−d, x, y, z, and x+y+z related to B-layers satisfy 0.2≤a≤0.7, 0.05≤b≤0.6, 0≤c≤0.3, 0≤d≤0.05, 0≤e≤0.05, 0≤x≤0.6, 0≤y≤0.6, 0

公开(公告)号：US20110233560A1

公开(公告)日：2011-09-29

申请号：US13065222

申请日：2011-03-16

申请人： Junichi Koike ,  Akihiro Shibatomi ,  Kunhwa Jung ,  Yuji Sutou

发明人： Junichi Koike ,  Akihiro Shibatomi ,  Kunhwa Jung ,  Yuji Sutou

IPC分类号： H01L29/12 ,  H01L23/48 ,  H01L21/283 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/1608 ,  H01L21/0485 ,  H01L29/45 ,  H01L29/47 ,  H01L29/6606 ,  H01L29/861 ,  H01L29/872 ,  H01L2924/0002 ,  H01L2924/00

摘要： An electrode for silicon carbide includes a silicide region which is provided in contact with a surface of a silicon carbide (SiC) layer and a carbide region which is provided on the silicide region. The silicide region contains a silicide of a first metal in more amount than a carbide of a second metal whose free energy of carbide formation is less than that of silicon (Si). The carbide region contains the carbide of the second metal in more amount than the silicide of the first metal.

摘要翻译： 碳化硅电极包括与碳化硅（SiC）层的表面接触的硅化物区域和设置在硅化物区域上的碳化物区域。 硅化物区域包含比碳化物形成的自由能小于硅（Si）的自由能的第二金属的碳化物更多的第一金属的硅化物。 碳化物区域包含比第一金属的硅化物更多的第二金属的碳化物。

公开(公告)号：US08598563B2

公开(公告)日：2013-12-03

申请号：US13395424

申请日：2010-09-09

申请人： Yuji Sutou ,  Junichi Koike ,  Yuta Saito ,  Toshiya Kamada

发明人： Yuji Sutou ,  Junichi Koike ,  Yuta Saito ,  Toshiya Kamada

IPC分类号： H01L45/00

CPC分类号： G11B7/2433 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683

摘要： A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula GexMyTe100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y≦60 (at %). This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of GexMyLzTe100-x-y-z wherein z is selected so that 40 (at %)≦x+y+z≦60 (at %).

摘要翻译： 具有高结晶温度并且非晶相的热稳定性优异的相变材料，其具有通式化学式GexMyTe100-xy的组成，其中M表示选自以下的一种元素： Al，Si，Cu，In和Sn中，X为5.0〜50.0（at％），y为4.0〜45.0（at％），x和y为40（at％）@ x + y @ 60（at％）。 该相变材料还包含作为附加元素L的至少一种元素L，其选自由GexMyLzTe100形式的N，O，Al，Si，P，Cu，In和Sn组成的组 其中z被选择使得40（at％）@ x + y + z @ 60（at％）。

公开(公告)号：US20120235110A1

公开(公告)日：2012-09-20

申请号：US13395424

申请日：2010-09-09

申请人： Yuji Sutou ,  Junichi Koike ,  Yuta Saito ,  Toshiya Kamada

发明人： Yuji Sutou ,  Junichi Koike ,  Yuta Saito ,  Toshiya Kamada

IPC分类号： H01B1/06 ,  H01L45/00

CPC分类号： G11B7/2433 ,  G11B2007/24308 ,  G11B2007/2431 ,  G11B2007/24312 ,  G11B2007/24316 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/1683

摘要： A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula GexMyTe100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)≦x+y≦60 (at %). This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of GexMyLzTe100-x-y-z wherein z is selected so that 40 (at %)≦x+y+z≦60 (at %).

摘要翻译： 具有高结晶温度并且非晶相的热稳定性优异的相变材料，其具有通式化学式GexMyTe100-xy的组成，其中M表示选自以下的一种元素： Al，Si，Cu，In和Sn中，X为5.0〜50.0（at％），y为4.0〜45.0（at％），x，y为40（at％）＆ y＆nlE; 60（at％）。 该相变材料还包含作为附加元素L的至少一种元素L，其选自由GexMyLzTe100形式的N，O，Al，Si，P，Cu，In和Sn组成的组 其中z被选择为使得40（at％）＆nlE; x + y + z＆nlE; 60（at％）。

公开(公告)号：US08451394B2

公开(公告)日：2013-05-28

申请号：US12799163

申请日：2010-04-20

申请人： Junichi Koike ,  Hideaki Kawakami

发明人： Junichi Koike ,  Hideaki Kawakami

IPC分类号： G02F1/136

CPC分类号： H01L29/458 ,  G02F1/1368 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L27/3276 ,  H01L51/0512 ,  H01L51/105

摘要： The present invention includes a liquid crystal display device with an oxide film having high adhesiveness to a semiconductor layer or a pixel electrode to thereby prevent oxidation of a wiring material or the like, and includes a source electrode and a drain electrode having high conductivity, and a manufacturing method therefor. In one embodiment of the present invention, a liquid crystal display device has a TFT electrode of a TFT substrate, wherein a source electrode or a drain electrode includes a layer of mainly copper and an oxide covering an outer part of the layer. Further, in the present invention, the semiconductor layer or the pixel electrode and said source electrode or the drain electrode are in ohmic contact in the TFT electrode.

摘要翻译： 本发明包括具有对半导体层或像素电极具有高粘附性的氧化膜从而防止布线材料等的氧化的液晶显示装置，并且包括具有高导电性的源电极和漏极，以及 其制造方法。 在本发明的一个实施例中，液晶显示装置具有TFT基板的TFT电极，其中源电极或漏电极包括主要为铜的层和覆盖该层的外部的氧化物。 此外，在本发明中，半导体层或像素电极以及源电极或漏电极在TFT电极中是欧姆接触的。

公开(公告)号：US08324730B2

公开(公告)日：2012-12-04

申请号：US12589852

申请日：2009-10-29

申请人： Junichi Koike ,  Akihiro Shibatomi

发明人： Junichi Koike ,  Akihiro Shibatomi

IPC分类号： H01L23/52

CPC分类号： H01L21/76843 ,  H01L21/2855 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76849 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.

摘要翻译： 铜互连结构包括绝缘层，在绝缘层上设置的开口中包括铜的互连体，以及形成在绝缘层和互连体之间的扩散阻挡层。 扩散阻挡层包括含有氧与锰的组成比（y / x）小于2的锰的氧化物层。

公开(公告)号：US08242015B2

公开(公告)日：2012-08-14

申请号：US12631556

申请日：2009-12-04

申请人： Kenji Matsumoto ,  Hitoshi Itoh ,  Koji Neishi ,  Junichi Koike

发明人： Kenji Matsumoto ,  Hitoshi Itoh ,  Koji Neishi ,  Junichi Koike

IPC分类号： H01L21/4763

CPC分类号： C23C16/045 ,  C23C16/18 ,  C23C16/40 ,  C23C16/408 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/00

摘要： On a surface of an object to be treated, a Mn-containing thin film or CuMn-containing alloy thin film is formed by heat treatment (CVD or ALD) by using a Mn-containing source gas (or Mn-containing source gas and a Cu-containing gas) and an oxygen-containing gas (for instance, water vapor) as a processing gas. The Mn-containing thin film or the CuMn-containing alloy thin film can be formed with high step coverage in a fine recess formed on the surface of the object to be treated.

摘要翻译： 在待处理物体的表面上，通过使用含Mn的源气体（或含Mn源气体，和含有Mn的源气体），通过热处理（CVD或ALD）形成含Mn的薄膜或含CuMn的合金薄膜 含Cu气体）和含氧气体（例如水蒸气）作为处理气体。 含Mn薄膜或含CuMn合金薄膜可以形成在形成在待处理物体表面上的细凹槽中的高阶覆盖。

公开(公告)号：US08163649B2

公开(公告)日：2012-04-24

申请号：US12803377

申请日：2010-06-24

申请人： Junichi Koike ,  Akihiro Shibatomi

发明人： Junichi Koike ,  Akihiro Shibatomi

IPC分类号： H01L21/44

CPC分类号： H01L23/5329 ,  H01L21/76831 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized.

摘要翻译： 铜互连结构包括绝缘层，互连和阻挡层。 绝缘层包括硅（元素符号：Si），碳（元素符号：C），氢（元素符号：H）和氧（元素符号：O））。 互连位于绝缘层上，互连线包括铜（元件符号：Cu）。 阻挡层位于绝缘层和互连之间。 阻挡层包括附加元素，碳（元素符号：C）和氢（元素符号：H）。 阻挡层在附加元素的原子浓度最大化的阻挡层的厚度的区域中具有碳原子浓度（元素符号：C）和氢（元素符号：H）。

公开(公告)号：US07943517B2

公开(公告)日：2011-05-17

申请号：US11877243

申请日：2007-10-23

申请人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

发明人： Junichi Koike ,  Makoto Wada ,  Shingo Takahashi ,  Noriyoshi Shimizu ,  Hideki Shibata ,  Satoshi Nishikawa ,  Takamasa Usui ,  Hayato Nasu ,  Masaki Yoshimaru

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844 ,  H01L21/76831 ,  H01L21/76849 ,  H01L21/76855 ,  H01L21/76856 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device, including forming an opening in an interlevel insulating film disposed on a semiconductor substrate, forming an auxiliary film containing a predetermined metal element, to cover an inner surface of the opening, forming a main film to fill the opening after forming the auxiliary film, the main film containing, as a main component, Cu used as a material of an interconnection main layer, and performing a heat treatment before or after forming the main film, thereby diffusing the predetermined metal element of the auxiliary film onto a surface of the interlevel insulating film facing the auxiliary film, so as to form a barrier film on the interlevel insulating film within the opening, the barrier film containing, as a main component, a compound of the predetermined metal element with a component element of the interlevel insulating film.

摘要翻译： 一种制造半导体器件的方法，包括在设置在半导体衬底上的层间绝缘膜中形成开口，形成含有预定金属元素的辅助膜以覆盖开口的内表面，形成主膜以填充开口 在形成辅助膜之后，主膜含有用作互连主层的材料的Cu，并且在形成主膜之前或之后进行热处理，从而扩散辅助膜的预定金属元素 在面向辅助膜的层间绝缘膜的表面上，以在开口内的层间绝缘膜上形成阻挡膜，所述阻挡膜以预定的金属元素与成分元素为主要成分， 的层间绝缘膜。