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    Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN, SiCN or SiOCN
    1.
    发明申请
    Method for fabricating a semiconductor device including the use of a compound containing silicon and nitrogen to form an insulation film of SiN, SiCN or SiOCN 审中-公开
    包括使用含有硅和氮的化合物形成SiN，SiCN或SiOCN的绝缘膜的半导体器件的制造方法

    公开(公告)号：US20070072381A1

    公开(公告)日：2007-03-29

    申请号：US11606271

    申请日：2006-11-30

    申请人： Masayuki Furuhashi ,  Toshifumi Mori ,  Young Kim ,  Takayuki Ohba ,  Ryou Nakamura

    发明人： Masayuki Furuhashi ,  Toshifumi Mori ,  Young Kim ,  Takayuki Ohba ,  Ryou Nakamura

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823814 ,  H01L21/823842

    摘要： The semiconductor device fabrication method comprises the step of forming gate electrode 20 on a semiconductor substrate 10 with a gate insulation film 18 formed therebetween; the step of implanting dopants in the semiconductor substrate 10 with the gate electrode 20 as the mask to form dopant diffused regions 28, 36; the step of forming a silicon oxide film 38 on the semiconductor substrate 10, covering the gate electrodes 20; anisotropically etching the silicon oxide film 38 to form sidewall spacers 42 including the silicon oxide film 38 on the side walls of the gate electrode 20. In the step of forming a silicon oxide film 38, the silicon oxide film 38 is formed by thermal CVD at a 500-580° C. film forming temperature, using bis (tertiary-butylamino) silane and oxygen as raw materials. Silicon oxide film 38 is formed at a relatively low film forming temperature, whereby the diffusion of the dopant in the dopant diffused regions 28, 36 forming the shallow region of the extension source/drain structure can be suppressed.

    摘要翻译： 半导体器件制造方法包括在半导体衬底10上形成栅电极20的步骤，其间形成有栅极绝缘膜18; 以栅电极20为掩模，在半导体衬底10中注入掺杂剂以形成掺杂剂扩散区域28,36的步骤; 在半导体衬底10上形成覆盖栅电极20的氧化硅膜38的步骤; 各向异性地蚀刻氧化硅膜38以在栅电极20的侧壁上形成包括氧化硅膜38的侧壁间隔物42。 在形成氧化硅膜38的步骤中，使用双（叔丁基氨基）硅烷和氧气作为原料，通过热CVD在500-580℃成膜温度下形成氧化硅膜38。 在相对低的成膜温度下形成氧化硅膜38，由此能够抑制形成扩展源极/漏极结构的浅区域的掺杂剂扩散区域28,36中的掺杂剂的扩散。

    Semiconductor device fabricating method
    2.
    发明申请
    Semiconductor device fabricating method 有权
    半导体器件制造方法

    公开(公告)号：US20050266631A1

    公开(公告)日：2005-12-01

    申请号：US11098567

    申请日：2005-04-05

    申请人： Young Kim ,  Toshifumi Mori

    发明人： Young Kim ,  Toshifumi Mori

    IPC分类号： H01L21/8238

    CPC分类号： H01L29/7842 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/1083 ,  H01L29/165 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7848

    摘要： Compression stress applying portions 20 of SiGe film are formed in the source/drain regions of the p-MOSA region 30a. Then, impurities are implanted in the p-MOS region 30a and the n-MOS region 30b to form shallow junction regions 22a, 22b and deep junction regions 23a, 23b. The impurity in the shallow junction regions 22a, 22b is prevented from being diffused immediately below the gate insulation film 15 by the thermal processing in forming the SiGe film, the short channel effect is prevented, and the hole mobility of the channel region of the p-MOS transistor 14a. The operation speed of the p-MOS transistor 13a is balanced with that of the n-MOS transistor, whereby the operation speed of the complementary semiconductor device 10 can be increased. The semiconductor device fabricating method can increase and balance the operation speed of a p-transistor with that of an n-transistor.

    摘要翻译： 在p-MOSA区域30a的源极/漏极区域中形成SiGe膜的压应力施加部分20。 然后，在p-MOS区域30a和n-MOS区域30b中注入杂质以形成浅结区域22a，22b和深结区域23a，23b。 通过在形成SiGe膜中的热处理，防止浅结区域22a，22b中的杂质在栅极绝缘膜15的正下方扩散，防止短沟道效应，并且沟道区域的空穴迁移率 p-MOS晶体管14a。 p-MOS晶体管13a的工作速度与n-MOS晶体管的操作速度平衡，可以提高互补半导体器件10的工作速度。 半导体器件制造方法可以增加并平衡p型晶体管与n型晶体管的工作速度。

    SCRUB PAD WITH PRINTED RIGID PLATES AND ASSOCIATED METHODS
    3.
    发明申请
    SCRUB PAD WITH PRINTED RIGID PLATES AND ASSOCIATED METHODS 审中-公开
    具有印刷刚性板的SCRUB PAD和相关方法

    公开(公告)号：US20070212965A1

    公开(公告)日：2007-09-13

    申请号：US11748941

    申请日：2007-05-15

    申请人： Nicole Smith ,  Young Kim ,  Hong Ji ,  Young Kim

    发明人： Nicole Smith ,  Young Kim ,  Hong Ji ,  Young Kim

    IPC分类号： B32B5/18 ,  B32B5/22

    CPC分类号： B32B5/26 ,  A41D31/245 ,  A45D2200/1018 ,  A45D2200/1054 ,  A45D2200/1063 ,  A47L13/16 ,  A47L23/266 ,  B32B3/08 ,  B32B2038/0076 ,  B32B2305/18 ,  B32B2307/554 ,  D06N3/183 ,  D06N3/186 ,  D06N7/0092 ,  D06N2201/02 ,  D06N2201/042 ,  D06N2203/041 ,  D06N2205/04 ,  D06N2205/20 ,  F41H5/0492 ,  Y10T442/3325 ,  Y10T442/3472 ,  Y10T442/3846

    摘要： The invention relates to a flexible scrubbing material that combines at least two discrete components. One component is a continuous flexible substrate. A second component is a discontinuous abrasive layer affixed to the flexible substrate. The abrasive layer is a set of plates formed from a material different than the continuous flexible substrate. One or two flexible substrates with affixed plates can be combined with an intermediate layer such as sponge or terry cloth. The gaps between plates are relatively large and are generally larger than one-third the largest plate dimension. The flexible substrate can be tightly woven fabric that can be printed with visually attractive colors, patterns and images. The plate material is a printable material that subsequently solidifies, such as epoxy. The inventions include associated methods of use and manufacture.

    摘要翻译： 本发明涉及组合至少两个分立组件的柔性洗涤材料。 一个组件是连续的柔性基板。 第二组分是固定在柔性基底上的不连续磨料层。 研磨层是由不同于连续柔性基底的材料形成的一组板。 具有固定板的一个或两个柔性基底可以与诸如海绵或毛圈布之类的中间层组合。 板之间的间隙相对较大并且通常大于最大板尺寸的三分之一。 柔性基底可以是可以用视觉吸引人的颜色，图案和图像打印的紧密织物。 板材是随后固化的可印刷材料，例如环氧树脂。 本发明包括相关的使用和制造方法。

    Crash recovery system and method for distributed file server using object based storage
    6.
    发明申请
    Crash recovery system and method for distributed file server using object based storage 审中-公开
    使用基于对象的存储的分布式文件服务器的崩溃恢复系统和方法

    公开(公告)号：US20060129614A1

    公开(公告)日：2006-06-15

    申请号：US11231158

    申请日：2005-09-20

    申请人： Hong Kim ,  Ki Jin ,  Young Kim ,  Young Kim ,  Mi Lee ,  Myung Kim

    发明人： Hong Kim ,  Ki Jin ,  Young Kim ,  Young Kim ,  Mi Lee ,  Myung Kim

    IPC分类号： G06F17/30

    CPC分类号： G06F11/1435 ,  G06F11/1448 ,  G06F11/1451 ,  G06F11/1464 ,  G06F11/1469

    摘要： A crash recovery system and method for distributed file server using object based storage are provided. The system includes: a client for accessing a file system using an object-based storage device (OSDFS), transmitting a command to an object-based storage device (OSD) and accessing a metadata server (MDS); a network for providing an interface and transferring data between the client, the metadata server and the object-based storage device; an object-based storage device for analyzing the command from the client and performing corresponding operations of the command; and a metadata server for storing and managing metadata controlling a direct access to a predetermined file from the client to the object based storage device in order to provide the metadata to the client, and checking and recovering a consistency of the stored and managed metadata when the OSDFS is malfunctioned.

    摘要翻译： 提供了一种使用基于对象的存储的分布式文件服务器的崩溃恢复系统和方法。 该系统包括：用于使用基于对象的存储设备（OSDFS）访问文件系统的客户机，向基于对象的存储设备（OSD）发送命令并访问元数据服务器（MDS）; 用于提供接口并在客户端，元数据服务器和基于对象的存储设备之间传送数据的网络; 基于对象的存储装置，用于分析来自客户机的命令并执行命令的相应操作; 以及用于存储和管理元数据的元数据服务器，其控制从客户机到基于对象的存储设备直接访问预定文件，以便向客户端提供元数据，以及当存储和管理的元数据的一致性时 OSDFS发生故障。

    Light-sensing apparatuses, methods of driving the light-sensing apparatuses, and optical touch screen apparatuses including the light-sensing apparatuses
    8.
    发明授权
    Light-sensing apparatuses, methods of driving the light-sensing apparatuses, and optical touch screen apparatuses including the light-sensing apparatuses 有权
    感光装置，驱动感光装置的方法以及包括光感测装置的光学触摸屏装置

    公开(公告)号：US09576992B2

    公开(公告)日：2017-02-21

    申请号：US13435666

    申请日：2012-03-30

    申请人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

    发明人： Sang-hun Jeon ,  I-hun Song ,  Seung-eon Ahn ,  Chang-jung Kim ,  Young Kim

    IPC分类号： H01L27/00 ,  H01L27/146 ,  G06F3/042

    CPC分类号： H01L27/14609 ,  G06F3/042 ,  G06F2203/04103

    摘要： Light-sensing apparatuses may include a light sensor transistor and a switching transistor in a light-sensing pixel, the transistors being oxide semiconductor transistors. In the light-sensing apparatus, the light sensor transistor and the switching transistor in the light-sensing pixel may be adjacently formed on one substrate, the switching transistor including a channel material that is relatively less light-sensitive than the light sensor transistor and is stable, and the light sensor transistor includes a channel material that is relatively light-sensitive. The light sensor transistor may include a transparent upper electrode on a surface of a channel, and a negative voltage may be applied to the transparent upper electrode, whereby a threshold voltage shift in a negative voltage direction may be prevented or reduced.

    摘要翻译： 光感测装置可以包括光感测像素中的光传感器晶体管和开关晶体管，该晶体管是氧化物半导体晶体管。 在感光装置中，光感测像素中的光传感器晶体管和开关晶体管可以相邻地形成在一个衬底上，该开关晶体管包括与光传感器晶体管相比较不光敏的沟道材料，并且是 并且光传感器晶体管包括相对光敏的通道材料。 光传感器晶体管可以在通道的表面上包括透明上电极，并且可以向透明上电极施加负电压，由此可以防止或减小负电压方向上的阈值电压偏移。

    Method and apparatus with a sliding mechanism
    10.
    发明授权
    Method and apparatus with a sliding mechanism 有权
    具有滑动机构的方法和装置

    公开(公告)号：US08588873B2

    公开(公告)日：2013-11-19

    申请号：US12459087

    申请日：2009-06-25

    申请人： Young Kim ,  Tommi Teuri ,  Mamoru Nagase ,  Masayuki Amano ,  Mikko Timperi

    发明人： Young Kim ,  Tommi Teuri ,  Mamoru Nagase ,  Masayuki Amano ,  Mikko Timperi

    IPC分类号： H04M1/00

    CPC分类号： H04M1/0237

    摘要： An apparatus including a slider part and a base assembly slidingly movable in relation to each other with the aid of a first guide rail and a second guide rail in the base assembly. The distance between the first guide rail and the second guide rail is adjustable while the apparatus is being assembled. A method is also disclosed.

    摘要翻译： 一种装置，包括滑块部分和基部组件，所述滑块部分和基部组件借助于基座组件中的第一导轨和第二导轨可相对于彼此滑动地移动。 第一导轨和第二导轨之间的距离在组装装置时是可调节的。 还公开了一种方法。