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公开(公告)号：US20070183922A1
公开(公告)日：2007-08-09
申请号：US11571289
申请日：2005-06-27
IPC分类号： C22C5/02
CPC分类号： B23K35/025 , B22F9/082 , B23K35/0244 , B23K35/30 , B23K35/3013 , C22C1/0466 , H05K3/3484
摘要： The problem is to provide an Au—Sn alloy powder for use in producing an Au—Sn alloy solder paste having reduced generation of voids. The problem is solved by an Au—Sn alloy powder for a solder paste, which has a composition consisting of Sn of 20.5-23.5% by mass and a remainder containing Au and inevitable impurities, and which has a microstructure in which 0.5 to 30 area % of fine Sn-rich primary crystal phase regions having a diameter of 3 μm or less are crystallized in a matrix.
摘要翻译： 问题在于提供一种Au-Sn合金粉末，用于生产具有减少的空隙产生的Au-Sn合金焊膏。 该问题由用于焊锡膏的Au-Sn合金粉末来解决，该Sn-Sn合金粉末的组成为Sn为20.5〜23.5质量％，余量为Au和不可避免的杂质，其组织为0.5〜30面积 直径3μm以下的细小的富Sn的初晶相的％的结晶化为基体。
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公开(公告)号：US07556669B2
公开(公告)日：2009-07-07
申请号：US11571289
申请日：2005-06-27
IPC分类号： B22F9/00
CPC分类号： B23K35/025 , B22F9/082 , B23K35/0244 , B23K35/30 , B23K35/3013 , C22C1/0466 , H05K3/3484
摘要： The problem is to provide an Au—Sn alloy powder for use in producing an Au—Sn alloy solder paste having reduced generation of voids. The problem is solved by an Au—Sn alloy powder for a solder paste, which has a composition consisting of Sn of 20.5-23.5% by mass and a remainder containing Au and inevitable impurities, and which has a microstructure in which 0.5 to 30 area % of fine Sn-rich primary crystal phase regions having a diameter of 3 μm or less are crystallized in a matrix.
摘要翻译： 问题在于提供一种Au-Sn合金粉末，用于生产具有减少的空隙产生的Au-Sn合金焊膏。 该问题由用于焊锡膏的Au-Sn合金粉末来解决，该Sn-Sn合金粉末的组成为Sn为20.5〜23.5质量％，余量为Au和不可避免的杂质，其组织为0.5〜30面积 直径3μm以下的细小的富Sn的初晶相的％的结晶化为基体。
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3.发明申请Au-Sn Alloy Bump Having no Trapped-In Large Void and Process for Producing the Same 有权Au-Sn合金凸块没有陷入大的空隙，并且生产它的过程公开(公告)号：US20080304999A1
公开(公告)日：2008-12-11
申请号：US12094167
申请日：2005-11-29
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/11 , H01L24/13 , H01L2224/1131 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2224/0401
摘要： An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The An Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.
摘要翻译： 提供不包括大空隙的Au-Sn合金凸块及其制造方法。 不包含大空隙的Au-Sn合金凸块包括含有Sn：20.5〜23.5质量％，余量为Au和不可避免的杂质的组成以及富含Sn的一次结晶相的0.5〜30面积％的结构 在矩阵中。
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4.发明授权公开(公告)号：US08721961B2
公开(公告)日：2014-05-13
申请号：US12094167
申请日：2005-11-29
IPC分类号： C22C5/02
CPC分类号： C22C5/02 , B23K35/3013 , H01L24/11 , H01L24/13 , H01L2224/1131 , H01L2224/13099 , H01L2224/13144 , H01L2224/16 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01322 , H01L2924/014 , H01L2924/10329 , H01L2224/0401
摘要： An Au—Sn alloy bump that does not include large voids and a method of producing the same are provided. The Au—Sn alloy bump that does not include large voids comprises a composition containing Sn: 20.5 to 23.5 mass % and the balance Au and unavoidable impurities, and a structure where 0.5 to 30 area % of Sn-rich primary crystal phase is crystallized in the matrix.
摘要翻译： 提供不包括大空隙的Au-Sn合金凸块及其制造方法。 不包含大空隙的Au-Sn合金凸块包括含有Sn：20.5〜23.5质量％，余量为Au和不可避免的杂质的组合物，以及富含Sn的一次结晶相的0.5〜30面积％结晶化的结构 矩阵。
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公开(公告)号：US20060113006A1
公开(公告)日：2006-06-01
申请号：US10542029
申请日：2004-01-22
申请人： Akihiro Masuda , Masayoshi Kohinata , Keigo Obata , Masakazu Yoshimoto , Kiyotaka Tsuji , Ei Uchida , Keiji Ori , Masahiro Eikawa
发明人： Akihiro Masuda , Masayoshi Kohinata , Keigo Obata , Masakazu Yoshimoto , Kiyotaka Tsuji , Ei Uchida , Keiji Ori , Masahiro Eikawa
IPC分类号： C23C22/48
CPC分类号： C25D3/32 , C25D3/60 , H01L2224/11462
摘要： The present invention provides a tin-containing plating bath comprising: (a) a soluble stannous salt, or a mixture of a soluble stannous salt and at least one soluble salt selected from the group consisting of copper salts, bismuth salts, silver salts, indium salts, zinc salts, nickel salts, cobalt salts and antimony salts; and (b) at least one aliphatic sulfonic acid selected from the group consisting of alkanesulfonic acids and alkanolsulfonic acids, the aliphatic sulfonic acid being a purified aliphatic sulfonic acid in which the total amount of sulfur-containing compounds as impurities consisting of compound(s) containing one or more sulfur atoms with an oxidation number of +4 or less in the molecule and compound(s) containing one or more sulfur atoms and one or more chlorine atoms in the molecule is a minute amount or less. A tin or tin alloy plating film with excellent reflowability, film appearance, etc. can be formed by the use of this plating bath.
摘要翻译： 本发明提供一种含锡电镀液，其包含：（a）可溶性亚锡盐或可溶性亚锡盐与至少一种选自铜盐，铋盐，银盐，铟的可溶性盐的混合物 盐，锌盐，镍盐，钴盐和锑盐; 和（b）选自烷烃磺酸和链烷醇磺酸的至少一种脂族磺酸，所述脂族磺酸是纯化的脂族磺酸，其中作为杂质的含硫化合物的总量由化合物 在分子中含有氧化数为+4以下的一个或多个硫原子，分子中含有一个以上硫原子和一个以上氯原子的化合物为微量以下。 可以通过使用该镀浴形成具有优异的回流性，膜外观等的锡或锡合金电镀膜。
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公开(公告)号：US5451279A
公开(公告)日：1995-09-19
申请号：US127795
申请日：1993-09-28
CPC分类号： C04B37/006 , C04B37/005 , C04B2235/658 , C04B2235/6581 , C04B2235/662 , C04B2235/663 , C04B2235/963 , C04B2237/062 , C04B2237/08 , C04B2237/083 , C04B2237/12 , C04B2237/121 , C04B2237/16 , C04B2237/36 , C04B2237/365 , C04B2237/366 , C04B2237/60 , C04B2237/704 , C04B2237/708 , C04B2237/72
摘要： A method for joining two ceramic sintered bodies with a joining layer. A magnesium layer is deposited on the ceramic sintered bodies to form a magnesium nitride layer. The joining layer has a component in common with a base component of the ceramic sintered bodies. The laminate is heat treated under conditions that convert the joining layer into a material substantially identical to that of the ceramic sintered bodies, whereby a homogeneous strong laminate results. The ceramic sintered body may be either an oxide, carbide or nitride. The joining layer is a metal corresponding to the base material of the ceramic sintered bodies. After joining, the joining layer is then nitrided. The resulting laminate has improved strength, and heat and corrosion resistance properties.
摘要翻译： 一种将两个陶瓷烧结体与接合层接合的方法。 在陶瓷烧结体上沉积镁层以形成氮化镁层。 接合层具有与陶瓷烧结体的基底成分相同的成分。 在将接合层转变成与陶瓷烧结体基本相同的材料的条件下对层压体进行热处理，从而得到均匀的强层压体。 陶瓷烧结体可以是氧化物，碳化物或氮化物。 接合层是与陶瓷烧结体的基材对应的金属。 接合后，接合层然后被氮化。 所得到的层压板具有改善的强度，耐热和耐腐蚀性能。
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7.发明授权Electroplating solution for forming Pb-Sn alloy bump electrodes on semiconductor wafer surface 失效用于在半导体晶片表面上形成Pb-Sn合金凸块电极的电镀溶液
公开(公告)号：US5651873A
公开(公告)日：1997-07-29
申请号：US494957
申请日：1995-06-26
申请人： Naoki Uchiyama , Masayoshi Kohinata , Akihiro Masuda , Yoshiaki Okuhama , Seishi Masaki , Masakazu Yoshimoto
发明人： Naoki Uchiyama , Masayoshi Kohinata , Akihiro Masuda , Yoshiaki Okuhama , Seishi Masaki , Masakazu Yoshimoto
CPC分类号： H01L24/12 , C25D3/56 , C25D3/60 , H01L24/11 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01037 , H01L2924/01039 , H01L2924/01078 , H01L2924/01082 , H01L2924/01088 , H01L2924/014 , H01L2924/15747
摘要： An electroplating solution (A), comprises an aqueous solution consisting essentially of lead phenolsulfonate: 1 to 250 g/liter in terms of Pb content; tin phenolsulfonate: 0.1 to 250 g/liter in terms of Sn content; phenolsulfonic acid: 20 to 300 g/liter; polyoxyethylene polyoxypropylene alkylamine: 1 to 50 g/liter; a 1-naphthaldehyde derivative: 0.001 to 1 g/liter; and an aldol sulfanilic acid derivative: 0.1 to 30 g/liter; or an aqueous solution (B) consisting essentially of lead methanesulfonate: 1 to 250 g/liter in terms of Pb content; tin methanesulfonate: 0.1 to 250 g/liter in terms of Sn content; methanesulfonic acid: 20 to 300 g/liter; polyoxyethylene polyoxypropylene alkylamine: 1 to 50 g/liter; and an aldol sulfanilic acid derivative: 0.1 to 30 g/liter. Each of the electroplating aqueous solutions (A) and (B) contains 50 ppb or less radioactive isotopes, whereby Pb-Sn alloy bump electrodes with improved uniformity in height and improved surface smoothness can be formed on a surface of a semiconductor wafer.
摘要翻译： 电镀液（A）包含基本上由苯酚磺酸铅组成的水溶液：以Pb含量计为1〜250g / l; 苯酚磺酸锡：以Sn含量计为0.1〜250g / l; 苯酚磺酸：20〜300g / l; 聚氧乙烯聚氧丙烯烷基胺：1〜50g / l; 1-萘甲醛衍生物：0.001〜1g /升; 和醛醇磺胺酸衍生物：0.1〜30g /升; 或基本上由甲磺酸铅组成的水溶液（B）：以Pb含量计为1至250g /升; 甲磺酸锡：以Sn含量计为0.1〜250g / l; 甲磺酸：20〜300g /升; 聚氧乙烯聚氧丙烯烷基胺：1〜50g / l; 和醛醇磺胺酸衍生物：0.1〜30g /升。 电镀水溶液（A）和（B）中的每一个含有50ppb以下的放射性同位素，由此可以在半导体晶片的表面上形成具有改善的高度均匀性和改善的表面平滑度的Pb-Sn合金凸块电极。
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