摘要:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要:
A solid-state imaging device includes first-group pixels 41, second-group pixels 42 skipped during thinning drive, and a scanning section 13. The scanning section 13 drives each of the first-group pixels 41 to perform read operation of outputting the output signal and initializing the amount of the signal charge accumulated in the photoelectric conversion element to a first level, and also drives each of the second-group pixels 42 to perform discharge operation of initializing the amount of the signal charge accumulated in the photoelectric conversion element to a second level that is higher than the first level and lower than a saturation signal level of the photoelectric conversion element 12.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要:
A solid state imaging device according to an aspect of the present invention includes: a pixel array (21) including pixel units arranged in rows and columns; a vertical shift register (26) which selects one of the rows of the pixel array (21); a column amplifier unit (22) including column amplifiers each of which is provided for a corresponding one of the columns and amplifies a column signal provided from the pixel unit included in the selected row; and a limiting circuit which limits an output voltage of the column amplifier to no more than a predetermined voltage that can be changed, wherein the limiting circuit changes the predetermined voltage according to switching between a normal mode and a high-sensitivity mode.
摘要:
There is provided an image processor and a method thereof for high-speed compensation for taken-image blurs produced by camera shakes or the like. In the first instance, a motion-detecting area is selected for each of two images taken by an image sensor. When projective data is calculated by means of computing in a predetermined direction pixels of the motion-detecting areas, the motion vector between the two images can be acquired based on the projective data. The image correlativity between the two images is then calculated in the direction that the motion vector designates; and the amount of pixel displacement between the two images is calculated based on the correlativity values acquired by the calculation. Moreover, the area that has been produced by displacing an image output area in a camera-shake compensation area designated in the second frame, by the pixel-displacement amount calculated by a displacement calculator is cut away from the camera-shake compensation area, and is outputted as an image for the image output area of the second frame.
摘要:
In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, a resetting transistor is formed. In a pixel part, in a first active region, a photodiode and a transferring transistor are formed. In a second active region, an amplifying transistor is formed. The first and second active regions are respectively the same in shape in image pixel parts. The resetting transistor and the amplifying transistor are shared by the pixel parts.
摘要:
A vertical type semiconductor device is provided with an improved construction which greatly decreases the on-resistance without impairing the breakdown voltage thereof. In the fundamental DMOS cells that control a current to constitute the vertical semiconductor device, through-hole cells are arranged along the sides of a cell having a channel. The through-hole cell includes a through-hole extending from the surface of an n.sup.- -type drift region toward an n.sup.+ -type drain region, and also includes an n.sup.+ -type through-hole region that is formed by diffusing impurities from the inner wall of the through-hole which is continuous with the n.sup.+ -type drain region. A breakdown voltage of the element is maintained by the n.sup.- -type drift region between a p-type well region and the n.sup.+ -type through-hole region or the n.sup.+ -type drain region. Given the unique arrangement of the through-hole cells, the JFET resistance component becomes negligibly small between the DMOS cells neighboring along the sides of the cells despite the fact that the cells are finely formed, and a small on-resistance is exhibited.
摘要:
A semiconductor strain sensor includes a silicon substrate, a strain resistive element and electrodes. The silicon substrate has a deformable portion which is deformed when stress is applied to it. The strain resistive element is formed on the deformable portion and has an at least a first layer and a second layer which form a heterojunction between them. The first layer is doped with impurities so that a two-dimensional carrier gas layer is formed in the second layer near the heterojunction. The two-dimensional carrier gas layer has carriers originating from the impurities. The electrodes electrically contact the two dimensional carrier gas layer. Change of resistance of the strain resistive element in accordance with the stress is detected through the electrodes.
摘要:
A semiconductor device with a current detecting function in which in place of an external resistor for detecting an operation current such as drain current or collector current of a device such as an FET or bipolar transistor, a probe electrode is formed in proximity to the device depletion layer to connect therethrough with the device channel to generate a probe voltage corresponding to the operation current.