公开(公告)号：US08445360B2

公开(公告)日：2013-05-21

申请号：US13027551

申请日：2011-02-15

申请人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

发明人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

IPC分类号： H01L21/46 ,  H01L21/30 ,  H01L21/78 ,  H01L21/301

CPC分类号： H01L21/02038 ,  B24B9/065 ,  B24B21/002 ,  B24B37/042 ,  H01L21/02087 ,  H01L21/304 ,  H01L21/76256

摘要： A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

摘要翻译： 一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。 该方法包括在第一旋转速度旋转器件基板的同时将第一研磨带压靠在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板的周边部分中的沉积膜， 暴露下面的硅。 在第二旋转速度旋转器件基板的同时，将第二研磨带压在位于器件基板的周边部分中的暴露的硅上，从而将硅抛光到预定的深度。

公开(公告)号：US20110256811A1

公开(公告)日：2011-10-20

申请号：US13080821

申请日：2011-04-06

申请人： Masayuki NAKANISHI ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

发明人： Masayuki NAKANISHI ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

IPC分类号： B24B1/00

CPC分类号： B24B21/002 ,  B24B9/065 ,  B24B21/04 ,  B24B37/042

摘要： A polishing method can obtain a good polishing profile which, for example, will not cause peeling of a semiconductor layer from a silicon substrate. The polishing method includes: positioning a polishing head at a position above a polishing start position in an edge portion of a rotating substrate; lowering a polishing tool of the polishing head until the polishing tool comes into contact with the polishing start position in the edge portion of the rotating substrate and a pressure between the polishing tool and the polishing start position reaches a set pressure; allowing the polishing tool to stay at the polishing start position for a predetermined amount of time; and then moving the polishing head toward a peripheral end of the substrate while keeping the polishing tool in contact with the edge portion of the rotating substrate at the set pressure.

摘要翻译： 抛光方法可以获得良好的抛光轮廓，其例如不会导致半导体层从硅衬底剥离。 抛光方法包括：将抛光头定位在旋转基板的边缘部分中的抛光开始位置上方的位置; 降低抛光头的抛光工具，直到研磨工具与旋转基板的边缘部分中的抛光开始位置接触，并且抛光工具和抛光开始位置之间的压力达到设定压力; 允许抛光工具在抛光开始位置停留预定的时间量; 然后将抛光头朝向基板的周缘移动，同时保持抛光工具在旋转基板的边缘部分处于设定压力。

公开(公告)号：US20110207294A1

公开(公告)日：2011-08-25

申请号：US13027551

申请日：2011-02-15

申请人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

发明人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota

IPC分类号： H01L21/762

CPC分类号： H01L21/02038 ,  B24B9/065 ,  B24B21/002 ,  B24B37/042 ,  H01L21/02087 ,  H01L21/304 ,  H01L21/76256

摘要： A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes: pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon; and pressing a second polishing tape against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.

摘要翻译： 一种制造半导体器件的方法使得可以在抛光条件下，在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下，用研磨带有效地抛光硅衬底的周边部分。 该方法包括：在第一旋转速度旋转器件基板的同时，将第一研磨带压在具有沉积膜的器件基板的周边部分上，同时以第一转速旋转器件基板，从而去除位于器件基板周边部分的沉积膜 并暴露下面的硅; 并且在第二旋转速度旋转所述装置基板的同时将第二研磨带压靠在所述装置基板的周边部分中的暴露的硅上，从而将所述硅抛光至预定的深度。

公开(公告)号：US20110217906A1

公开(公告)日：2011-09-08

申请号：US13036114

申请日：2011-02-28

申请人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

发明人： Masayuki NAKANISHI ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

IPC分类号： B24B1/00 ,  B24B55/00

CPC分类号： B24B1/00 ,  B24B55/00

摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

公开(公告)号：US08641480B2

公开(公告)日：2014-02-04

申请号：US13036114

申请日：2011-02-28

申请人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

发明人： Masayuki Nakanishi ,  Tetsuji Togawa ,  Kenya Ito ,  Masaya Seki ,  Kenji Iwade ,  Takeo Kubota ,  Takeshi Nishioka

IPC分类号： B24B1/00

CPC分类号： B24B1/00 ,  B24B55/00

摘要： A polishing apparatus can effectively prevent abrasive particles from falling off a polishing tape during polishing. The polishing apparatus includes: a polishing head for polishing a peripheral portion of a substrate by pressing a surface of a polishing tape, having abrasive particles fixed on the surface, against the peripheral portion of the substrate while allowing the polishing tape to travel in one direction; and a conditioning apparatus, disposed upstream of the polishing head in the traveling direction of the polishing tape, for conditioning the surface of the polishing tape in advance in order to prevent the abrasive particles from falling off the surface of the polishing tape during polishing.

摘要翻译： 抛光装置可以有效地防止研磨颗粒在抛光过程中从抛光带上脱落。 抛光装置包括：抛光头，用于通过将具有固定在表面上的研磨颗粒的研磨带的表面按压在基板的周边部分上，同时允许研磨带沿单向移动来抛光基板的周边部分 ; 以及调整装置，其设置在研磨带的行进方向上的抛光头的上游，用于预先调整研磨带的表面，以防止研磨颗粒在抛光期间从研磨带的表面脱落。

公开(公告)号：US20100062691A1

公开(公告)日：2010-03-11

申请号：US12618033

申请日：2009-11-13

申请人： Tetsuji TOGAWA ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

发明人： Tetsuji TOGAWA ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

IPC分类号： B24B55/00 ,  B24B1/00 ,  B24B55/12

CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。

公开(公告)号：US08492276B2

公开(公告)日：2013-07-23

申请号：US12537766

申请日：2009-08-07

申请人： Taichi Abe ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

发明人： Taichi Abe ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

IPC分类号： H01L21/3212

CPC分类号： C09K13/06 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

摘要： A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

摘要翻译： 使用化学机械抛光水性分散体来抛光包括含有钨的互连层的抛光对象。 化学机械抛光水分散体包括：（A）阳离子水溶性聚合物; （B）铁（III）化合物; 和（C）胶体二氧化硅颗粒。 阳离子水溶性聚合物（A）的含量（质量％）（质量％）和铁（III）化合物（B）的含量（MB）（质量％）满足关系式“MA / MB = 0.004〜0.1 “。 化学机械抛光水性分散体的pH为1〜3。

公开(公告)号：US20060205323A1

公开(公告)日：2006-09-14

申请号：US10539245

申请日：2003-12-26

申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

IPC分类号： B24B51/00 ,  B24B29/00 ,  B24B47/02

CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing the amount of heat generated during polishing of a substrate to be polished and of effectively cooling the substrate holding part of the substrate holding mechanism and also capable of effectively preventing the polishing solution and polishing dust from adhering to the outer peripheral portion of the substrate holding part and drying out thereon. The substrate holding mechanism (top ring 1) has a mounting flange 2, a support member 6, and a retainer ring 3. A substrate W to be polished is held on the lower side of the support member 6 surrounded by the retainer ring 3, and the substrate W is pressed against a polishing surface. The mounting flange 2 is provided with a flow passage 26 contiguous with at least the retainer ring 3. A temperature-controlled gas supplied through the flow passage 26 to cool the mounting flange 2, the support member 6 and the retainer ring 3. The retainer ring 3 is provided with a plurality of through-holes 3a communicating with the flow passage 26 to spray the gas flowing through the flow passage 26 onto the polishing surface of a polishing table.

摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够有效地 防止研磨液和研磨粉尘附着在基板保持部的外周部并在其上干燥。 基板保持机构（顶环1）具有安装凸缘2，支撑构件6和保持环3.待被抛光的基板W被保持在由保持环3包围的支撑构件6的下侧， 将基板W压在研磨面上。 安装凸缘2设置有与至少保持环3相邻的流动通道26。 通过流路26提供的温度控制气体，以冷却安装凸缘2，支撑构件6和保持环3。 保持环3设置有与流路26连通的多个通孔3a，以将流过流路26的气体喷射到研磨台的研磨面上。

公开(公告)号：US08292694B2

公开(公告)日：2012-10-23

申请号：US12618033

申请日：2009-11-13

申请人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

发明人： Tetsuji Togawa ,  Toshio Watanabe ,  Hiroyuki Yano ,  Gen Toyota ,  Kenji Iwade ,  Yoshikuni Tateyama

IPC分类号： B24B49/00

CPC分类号： B24B37/015 ,  B24B41/061 ,  B24B55/02

摘要： A substrate holding mechanism, a substrate polishing apparatus and a substrate polishing method have functions capable of minimizing an amount of heat generated during polishing of a substrate to be polished and of effectively cooling a substrate holding part of the substrate holding mechanism, and also capable of effectively preventing a polishing solution and polishing dust from adhering to an outer peripheral portion of the substrate holding part and drying thereon. The substrate holding mechanism has a mounting flange, a support member 6 and a retainer ring. A substrate to be polished is held on a lower side of the support member surrounded by the retainer ring, and the substrate is pressed against a polishing surface of a polishing table. The mounting flange is provided with a flow passage contiguous with at least the retainer ring. A temperature-controlled gas is supplied through the flow passage to cool the mounting flange, the support member and the retainer ring. The retainer ring is provided with a plurality of through-holes communicating with the flow passage to spray the gas flowing through the flow passage onto the polishing surface of the polishing table.

摘要翻译： 基板保持机构，基板研磨装置和基板研磨方法具有能够使待研磨基板的抛光时产生的热量最小化的功能，并有效地冷却基板保持机构的基板保持部，并且还能够 有效地防止研磨液和抛光尘埃附着在基板保持部的外周部并干燥。 基板保持机构具有安装凸缘，支撑构件6和保持环。 待研磨的基板被保持在由保持环包围的支撑构件的下侧，并且基板被压靠在抛光台的抛光表面上。 安装凸缘设置有至少与保持环相邻的流动通道。 通过流路供给温度控制气体以冷却安装凸缘，支撑构件和保持环。 保持环设置有与流路连通的多个通孔，以将流过流道的气体喷射到抛光台的抛光表面上。

公开(公告)号：US20100075501A1

公开(公告)日：2010-03-25

申请号：US12537766

申请日：2009-08-07

申请人： Taichi ABE ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

发明人： Taichi ABE ,  Hirotaka Shida ,  Akihiro Takemura ,  Mitsuru Meno ,  Shinichi Hirasawa ,  Kenji Iwade ,  Takeshi Nishioka

IPC分类号： H01L21/304 ,  C09K13/00

CPC分类号： C09K13/06 ,  C09K3/1463 ,  H01L21/3212 ,  H01L21/7684

摘要： A chemical mechanical polishing aqueous dispersion is used to polish a polishing target that includes an interconnect layer that contains tungsten. The chemical mechanical polishing aqueous dispersion includes: (A) a cationic water-soluble polymer; (B) an iron (III) compound; and (C) colloidal silica particles. The content (MA) (mass %) of the cationic water-soluble polymer (A) and the content (MB) (mass %) of the iron (III) compound (B) satisfy the relationship “MA/MB=0.004 to 0.1”. The chemical mechanical polishing aqueous dispersion has a pH of 1 to 3.

摘要翻译： 使用化学机械抛光水性分散体来抛光包括含有钨的互连层的抛光对象。 化学机械抛光水分散体包括：（A）阳离子水溶性聚合物; （B）铁（III）化合物; 和（C）胶体二氧化硅颗粒。 阳离子水溶性聚合物（A）的含量（质量％）（质量％）和铁（III）化合物（B）的含量（MB）（质量％）满足关系式“MA / MB = 0.004〜0.1 “。 化学机械抛光水性分散体的pH为1〜3。